• H.-L. Chang, H.-C. Li, C. W. Liu, F. Chen, and M.-J. Tsai, “Physical mechanism of HfO2-based bipolar resistive random access memory,” accepted by 2011 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 25-27, 2011.
• Yen Chun Fu, William Hsu, Yen-Ting Chen, Huang-Siang Lan, Cheng-Han Lee, Hung-Chih Chang, Hou-Yun Lee, Guang-Li Luo, Chao-Hsin Chien, C. W. Liu, Chenming Hu, and Fu-Liang Yang “ High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response,” International Electron Devices Meeting (IEDM), 2010.
• T. M. Lu, W. Pan, D. C. Tsui, C. -H. Lee, and C. W. Liu, “In-plane magnetoresistivity of high-mobility two-dimensional electrons in an undoped Si/SiGe quantum well at 20 mK” March Meeting of the American Physical Society, Portland, Oregon, USA, March 15-19, 2010.
• “Invited” C. W. Liu, “ High mobility for physics and technologies” the III Nanotechnology International Forum , November 1-3 2010, Moscow.
• C. -H. Lee, W. H. Tu, C. M. Lin, H. T. Chang, S. W. Lee, and C. W. Liu, “Surface Orientation Effects on SiGe Quantum Dots and Nanorings Formation” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
• S. -R. Jan, C. -H. Lee, T. -H. Cheng , Y. -Y. Chen, K. -L. Peng, S. -T. Chan, C. W. Liu, Y. Yamamoto, and B. Tillack, “Extrinsic effects of indirect radiative transition of Ge,” by 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
• C. -M. Lin, Y. -T. Chen, C.-H. Lee, H.-C. Chang, W. -C. Chang, and C. W. Liu, "Enhanced Voltage Linearity of HfO2 Metal-Insulator-Metal Capacitors by H2O Prepulsing Treatment on Bottom Electrode"", 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
• T. -H. Cheng , W. W. Hsu , C.Y. Huang, J.-A. Lu, J. Y. Chen, and C. W. Liu, "Photoluminescence Characterization and Passivation of CIGS Absorber", 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
• T. -H. Cheng , K.-L. Peng, C. -Y. Ko , C.-Y. Chen , S. T. Chan, and C. W. Liu, "Enhancements of Direct Band Radiative Recombination from Ge", 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
• H.-C. Sun, W.-D. Chen, T. H. Cheng, Y.-J. Yang and C. W. Liu, “Recovery of light induced degradation of micromorph solar cells by reverse bias,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
• “Invited” T. M. Lu, C. -H. Lee, D. C. Tsui, and C. W. Liu, “High mobility two-dimensional electron gas in strained Si,” 5th International SiGe Technology and Device Meeting (ISTDM), Stockholm, Sweden, May24-26, 2010.
• C. -H. Lee, W. -H. Tu, H. T. Chang, Y. -C. Fu, S. W. Lee, and C. W. Liu, “SiGe quantum dots and nanorings on Si(111),” by 5th International SiGe Technology and Device Meeting (ISTDM), Stockholm, Sweden, May24-26, 2010.
• W. S. Ho, Y.-Y. Chen, T.-H. Cheng, J.-Y. Chen, J.-A. Lu, P.-L. Huang, and C. W. Liu, “Thermal oxide, Al2O3 and amorphous-Si passivation layers on silicon,” accepted by 35th IEEE Photovoltaic Specialist Conference, June 20-25, 2010 at the Hawaiian Convention Center in Waikiki, Hawaii.
• “Laser Annealing and Local Heating Effects during Raman Measurement of Hydrogenated Amorphous Silicon Films,” ECS Transactions - CSTIC 2010, Vol. 27, Silicon Technology for Electronic and Photovoltaic Applications, 2010.
• T. M. Lu, W. Pan, D. C. Tsui, C. -H. Lee, and C. W. Liu, “In-plane magnetoresistivity of high-mobility two-dimensional electrons in an undoped Si/SiGe quantum well at 20 mK”  by March Meeting of The American Physical Society, Portland, Oregon, USA, March 15-19, 2010.

• T. -H. Cheng, K.-L. Peng, C.Y. Huang, W. D. Chen, and C. W. Liu, “Characterization of CIGS solar cell absorber”,  by 2009 International Photovoltaic Solar Energy Conference and Exhibition (IPVSEE 2009), Beijin, China
• H.-C. Chang, P.-S. Kuo, C.-Y. Peng, Y.-T. Chen, W.-Y. Chen, and C. W. Liu, “Optimization of A Saddle-like FinFET by Device Simulation for Sub-50nm DRAM Application,”  2009 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2009.
• Y.-T. Chen, C.-F. Huang, H.-C. Sun, T.-Y. Wu, C.-Y. Ku, C. W. Liu, Y.-C. Hsu, and J.-S. Chen, “A Design of 1T Memory Cells Using Channel Traps for Long Data Retention Time,” accepted by 2009 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2009.
• G.-L. Luo, S.-C. Huang, C.-T. Chung, Dawei Heh, C.-H. Chien, C.-C. Cheng, Y.-J. Lee, W.-F. Wu, C.-C. Hsu, M.-L. Kuo, J.-Y. Yao, M.-N. Chang, C. W. Liu, C.-M. Hu, C.-Y. Chang, and F.-L. Yang, “A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced Leakage,” IEDM, Baltimore, 2009.
• T.-H. Cheng, C. -Y. Ko, C.-Y. Chen, K.-L. Peng, C. W. Hsu, P.K. Chiang, and C. W. Liu, “Luminescence from monolithic GaInP/GaInAs/Ge triple-junction solar cells”, International Photovoltaic Science and Engineering Conference and Exhibition , ICC JEJU, Korea, November 9-13, 2009.
• W.S. Ho, J.-F. Liao, Y.-Y. Chen, C.-A. Lu, W.-D. Chen, W.-F. Tsai, C.-F. Ai, and  C. W. Liu, “Passivation of solar cell by Plasma Immersion Ion Implantation”, 19th International Photovoltaic Science and Engineering Conference and Exhibition , ICC JEJU, Korea, November 9-13, 2009.
• C.-F. Huang, H.-C. Sun, P.-S. Kuo, Y.-T. Chen, C. W. Liu, Y.-J. Hsu, and J.-S. Chen, “Dynamic Bias Temperature Instability of p-channel Polycrystalline Silicon Thin-film Transistors,”  16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009), Suzhou, China, July 6-10, 2009.
• C.-H. Lee, Y. -Y. Shen, Y. Y. Chen, H.-T. Chang, S. W. Lee, and C. W. Liu, “SiGe Quantum Dots and Quantum Rings on Si(110) by Ultra-High Vacuum Chemical Vapor Deposition,”  6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), p. 43, Los Angeles, USA, May 17-22, 2009.
• P. S. Chen, S. W. Lee, and C. W. Liu, “Enhanced relaxation and thermal stability in thin SiGe films with an inserted Si1-yCy layer,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P13, Los Angeles, p. 113, USA, May 17-22, 2009.
• C.-H. Lin and C. W. Liu, “Relation between Currents and Positions of Delta-Doped Layers in SiGe QDIPs,”  6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P113, Los Angeles, USA, May 17-22, 2009.
• T.-H. Cheng, P.-S. Kuo, C.-Y. Ko, C.-Y. Chen, and C. W. Liu, “Minority carrier lifetime measurement of monocrystalline silicon solar cell by temporal electroluminescence method,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P125, Los Angeles, USA, May 17-22, 2009.
• C.-Y. Peng, Y.-H. Yang, C.-M. Lin, Y.-Y. Shen, M. H. Lee, and C. W. Liu, “The Process Strain Determination of Nickel Germanides by Raman Spectroscopy,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), p. 123, Los Angeles, USA, May 17-22, 2009.
• H. T. Chang, S. W. Lee, C.-H. Lee, S. L. Cheng, and C. W. Liu, “Ge redistribution of self-assembled Ge islands on Si (001) during annealing,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P63, Los Angeles, USA, May 17-22, 2009.
• Y.-Y. Chen, W.-S. Ho, C.-H. Lee, Y.-H. Yang, W.-D. Chen, C. W. Liu, “The Ge1-xSnx MOS Infrared Photodetector,”  6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), p. 114, Los Angeles, USA, May 17-22, 2009.
• H.-L. Chang, H.-C. Chang, S.-C. Yang, H.-C. Tsai, H.-C. Li, and C. W. Liu, “Improved SPICE Macromodel of Phase Change Random Access Memory,”  2009 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), Hsinchu, Taiwan, April 27-30, 2009.

• H.-C. Sun, C.-F. Huang, Y.-T. Chen, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “A New NBTI Characterization Method on Polycrystalline Silicon Thin-Film Transistors,” accepted by 15th International Display Workshop (IDW), Proceeding Vol. 2, pp. 659-662, Niigata, Japan, Dec. 3-5, 2008.
• C.-F. Huang, Y.-T. Chen, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Bias Temperature Instability on Polycrystalline Silicon Thin-Film Transistors,”  2008 International Electron Devices and Materials Symposia (IEDMS), Taichung, Taiwan, Nov. 28-29, 2008.
• C.-H. Lee, C. M. Lin, Y. -Y. Sen, S. W. Lee P. Shushpannikov, R. V. Goldstein, and C. W. Liu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition,” 2008 International Electron Devices and Materials Symposia (IEDMS), Taichung, Taiwan, Nov. 28-29, 2008.
• W. S. Ho, C.-H. Lin, P.-S. Kuo, W. W. Hsu, T.-H. Cheng, Y.-Y Chen and C. W. Liu “Metal Oxide Semiconductor UV Sensor,” 7th IEEE Conference on Sensors, Lecce, Italy, Oct 26-29, 2008.
• “Invited” C.-F. Huang, Y.-T. Chen, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, K.-C. Lin, and J.-S. Chen, “Comprehensive Study of Bias Temperature Instability on Polycrystalline Silicon Thin-Film Transistors,” 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, Oct. 20-23, 2008.
• C.-Y. Peng, Y.-H. Yang, C.-M. Lin,Y.-J. Yang, C.-F. Huang, and C. W. Liu, “Process Strain Induced by Nickel Germanide on (100) Ge Substrate,” 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, Oct. 20-23, 2008.
• S. W. Lee, H. T. Chang, C. -H. Lee, C. A. Chueh, S. -L. Cheng, W. -W. Wu, C. W. Liu, “Vertical Self-Alignment of SiGe Nanolenses on Si (001),” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008
• C.-H. Lee, C. M. Lin, S. W. Lee, P. Shushpannikov, R. V. Goldstein and C. W. Liu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008
• C.-Y. Peng, C.-F. Huang, Y.-J. Yang, S. Chakraborty, Y.-H. Yang, C.-W. Lai, C. M. Lin and C. W. Liu, “Micro-Raman Studies on Nickel Germanides formed on (110) crystalline Ge,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008
• C.-F. Huang, Y.-J. Yang, C.-Y. Peng, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Polarity Change of Threshold Voltage Shifts for n-channel Polycrystalline Silicon Thin-Film Transistors Stressed by Negative Gate Bias,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008.
• S. W. Lee, C.-H. Lee, H. T. Chang, S. L. Cheng, and C. W. Liu, “Evolution of composition distribution of Si-capped Ge islands on Si (001),” 4th International Conference on Technological Advances of Thin Films & Surface Coatings (Thin Films 2008), Singapore, July 13-16, 2008.
• W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide Photodetector,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008. (Best Student Paper Award)
• S.-W. Lee, H. T. Chang, C.A. Chueh, S. L. Cheng, C.-H. Lee, and C. W. Liu, “The Compositional Distribution of Ge Islands Grown by Ultra-High Vacuum Chemical Vapor Deposition,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008.
  
• H.-L. Chang, P.-S. Kuo, W.-C. Hua, C.-P. Lin, C.-Y. Lin, C. W. Liu, “Crosstalk Reduction Technique Between Dual SiGe Power Amplifiers,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008.
  
• C.-Y. Peng, C.-F. Huang, Y.-J. Yang, S. Chakraborty, and C. W. Liu, “Nickel Germanide Formation: Orientation and Temperature Effects,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008.
  

• T.-H. Cheng, C. T. Lee, M. H. Liao, P. -S. Kuo, T. A. Hung, and C. W. Liu, “Electrically pumped Ge Laser at room temperature,” International Electron Devices Meeting (IEDM), Washington D.C., Dec. 2007.
• C.-F. Huang, Y.-J. Yang, C.-Y. Peng, H.-C. Sun, C. W. Liu, C.-W. Chao, and K.-C. Lin, “Comprehensive Study on Dynamic Bias Temperature Instability of p-channel Polycrystalline Silicon Thin-film Transistors,” accepted by 2007 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2007.
• Y.-J. Yang, M. H. Liao, C. W. Liu, Lingyen Yeh, T.-L. Lee, M.-S. Liang, “Superior n-MOSFET Performance by Optimal Stress Design,” 2007 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2007.
• P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, C. W. Liu, “Si/SiGe/Si Quantum well Schottky barrier diodes,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
• S. W. Lee, P.-S. Chen, M.-H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C2H4 and SiCH6 mediation by ultra-high vacuum chemical vapor deposition,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
• P.-S. Chen, S. W. Lee, M.-H. Lee,  and C. W. Liu, “Formation of Relaxed SiGe on the buffer consisting of modified SiGe islands by Si Pre-mixing,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
• C.-H. Lee, C.-Y. Yu, C. M. Lin, H. Lin, W.-H. Chang, and C. W. Liu, “Carrier Gas Effects on SiGe Growth by Ultra-high Vacuum Chemical Vapor Deposition,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
• W.-S. Liao, S.-Y. Huang, T. Shih, and C. W. Liu, “Current and Speed Enhancements at 90nm Node through Package Strain,” International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sept. 2007.
• T.-H. Cheng, C.-H. Lee, M. H. Liao, and C. W. Liu, “Electroluminescence from strained SiGe quantum dot light-emitting diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007.
• S.-R. Jan, M. H. Liao, T.-H. Cheng, Y. Deng and C. W. Liu, “Blue Electroluminescence from Metal/Oxide/n-6H-SiC Tunneling Diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007.
• P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu, “Novel Transport mechanism of SiGe dot MOS tunneling diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007.
• C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” International Conference on Surfaces, Coatings and Nanostructured Materials (NanoSMat 2007), Algarve, Portugal, July 9-11, 2007.
• C.-H. Lin, C.-H. Lee, Y.-T. Chiang, C.-C. Hsu, Y. Deng, Y.-H. Dai, and C. W. Liu, “Ge-on-Polyimide Photodetector,” International Symposium for Flexible Electronics and Display (ISFED), Hsinchu, Taiwan, 17-18 Dec. 2007.
• C.-Y. Peng, M. H. Liao, C.-F. Huang, Y. J. Yang, S. T. Chang, and C. W. Liu, “Strain effects on MOS  capacitors and Schottky diodes,” 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May, 2007. 
• Y.-J. Yang, S. T. Chang, and C. W. Liu, “Electron Mobility Enhancement in STRAINED-Germanium NMOSFETs and Impact of Strain Engineering in Ballistic Regime,” International Symposium VLSI Technology, System, and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2007.

• H.-L. Chang, P.-T. Lin, W.-C. Hua, C.-P. Lin, C.-Y. Lin, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “Differential Power Combining Technique for General Power Amplifiers Using Lumped Component Network,” Asia-Pacific Microwave Conference (APMC), Yokohama, Japan, Dec. 2006.
  
• “Invited” C.-H. Lin and C. W. Liu, “MOS Si/Ge photodetectors,” Optoelectronic Devices: Physics, Fabrication, and Application III, SPIE Symposium, Boston, Oct. 1-4, 2006.
  
• “Invited” C. W. Liu, and F. Yuan, “Mobility enhancement technologies,” 8th International Conference on Solid-state and Integrated Circuit Technology (ICSICT-06), Shanghai, China, Oct. 2006.
• “Invited” M. H. Liao, C.-H. Lin, C.-H. Lee, T.-H. Cheng, T.-H. Guo, and C. W. Liu, “Electroluminescence from SiGe based metal-oxide-semiconductor Tunneling Diodes,” 210th Meeting of Electrochemical Society, Mexico, Oct. 29-Nov. 3, 2006.
• C.-H. Lin, C.-Y. Yu, M. H. Liao, C.-F. Huang, C.-J. Lee, C.-Y. Lee, and C. W. Liu, “The Process and Optoelectronic Characterization of Ge-on-Insulator,” 210th Meeting of Electrochemical Society, Mexico, Oct. 29-Nov. 3, 2006.
  
• M. H. Liao, S. T. Chang, P. S. Kuo, H.-T. Wu, C.-Y. Peng, and C. W. Liu, “Strained Pt Schottky diodes on n-type Si and Ge,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 22. 2006.
  
• Y. M. Lin, S. L, Wu, S. J. Chang, P. S. Chen, and C. W. Liu, “Impact of SiN on performance in Novel CMOS Architecture using substrate strained-SiGe and mechanical strained Si technology,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 64. 2006.
• M .H. Lee, S. T. Chang, S. Maikap, C.-Y. Yu, and C. W. Liu, “The interface properties of SiO2/strained Si with carbon incorporation surface channel MOSFETs,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 88. 2006.
• M. H. Liao, T.-H. Cheng, T. C. Chen, C.-H. Lai, C.-H, Lee, and C. W. Liu, “Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 222. 2006.
• W.-C. Hua, P.-T. Lin, C.-P. Lin, C.-Y. Lin, H.-L. Chang, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “Coupling Effects of Dual SiGe Power Amplifiers for 802.11n MIMO Applications,” 2006 IEEE Radio Frequency Integrated Circuits (RFIC) Conference Symp. Dig., San Francisco, USA, pp. 81-84, 2006.

• C.-Y. Peng, F. Yuan, M. H. Lee, C.-Y. Yu, S. Maikap, M. H. Liao, S. T. Chang, and C. W. Liu, “Novel Schottky Barrier Ge/Si Heterojunction PMOS,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., 2005.
  
• I.-J. Yang, C.-Y. Peng, S. T. Chang, and C. W. Liu, “Calculation of the Electron Mobility in Silicon Inversion Layers: Dependence on Surface Orientation, Channel Direction, and Stress,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., 2005.
  
• M. H. Liao, C.-Y. Yu, C.-F. Huang, C.-H. Lin, C.-J. Lee, M.-H. Yu, S. T. Chang, C.-Y. Liang, C.-Y. Lee, T.-H. Guo, C.-C. Chang, and C. W. Liu, “2m emission from Si/Ge heterojunction LED and up to 1.55 m detection by GOI detector with strain-enhanced features,” 51st International Electron Devices Meeting (IEDM), Washington D.C., 2005.
  
• “Invited” P. S. Chen, M. H. Lee, S. W. Lee, C. W. Liu, and M. -J. Tsai, “Strained CMOS technology with Ge,” 207th Meeting of Electrochemical Society, Quebec City, Canada, May 15-20, 2005.
  
• C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, and C. W. Liu, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” p.322, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  
• S. W. Lee, P. S. Chen, K. F. Liao, M.-J. Tsai, C. W. Liu, and L. J. Chen, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” p.116, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  
• Y. H. Peng, P. S. Chen, M.-J. Tsai, K. T. Chen, C. W. Liu, C. H. Kuan, and S. C. Lee, “The study of Electro-Luminescence from Ge/Si quantum dots and Si/SiGe supperlattices,” p.226, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  
• S. W. Lee, Y. L. Chueh, P. S. Chen, H. C. Chen, C. W. Liu, and L. J. Chen, “Field emission properties of self-assembled Ge quantum dots grown by ultrahigh vacuum chemical vapor deposition,” pp.296, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  
• P.-S. Kuo, C.-H. Lin, P. S. Chen, and C. W. Liu, “The current transport mechanism of MOS Photodetector with Pt Gate,” p.220, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  
• W.-C. Hua, H.-H. Lai, P.-T. Lin, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “High-Linearity and Temperature-Insensitive 2.4 GHz SiGe Power Amplifier with Dynamic-Bias Control,” 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Conference Symp Dig., long beach, CA, USA,. June, pp. 609-612, 2005

• S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C.-F. Huang, S. T. Chang, and C. W. Liu, “Package-strain-enhanced device and circuit performance,” 50th International Electron Devices Meeting (IEDM), pp. 233-236, San Francisco, Dec. 13-15, 2004. (Cited No./Self Cited No.= 8 / 5)
  
• C.-Y. Yu, P.-W. Chen, M.-H. Liao, and C. W. Liu, “Buckled SiGe layers on viscous SGOI substrates by wafer bonding and layer transfer techniques,” 15th International Conference on Ion Implantation Technology (IIT), 2004.
  
• P. S. Chen, S. W. Lee, C.W. Liu, and M.-J. Tsai, “Thin relaxed SiGe layer for strained Si CMOS,” Semiconductor Manufacturing Technology Workshop Proceedings, pp.79-82,2004.
  
• P. S. Chen, K. F. Liao, M. H. Lin, S. W. Lee, C.W. Liu, and M.-J. Tsai, “Influence of H and He implantation on surface morphology and relaxation in SiGe/Si (100),” 15th International Conference on Ion Implantation Technology (IIT), 2004.
  
• P. S. Chen, S. W. Li, W. Y. Hiseh, M.-J. Tsai, and C. W. Liu, “UHV/CVD of Si1-x-yGexCy/Si and Si1-yCy/Si heterostructure,” International Conference in Asia IUMRS-ICA, Hsinchu, Taiwan, Nov. 16-18, 2004.
  
• P. S. Chen, M.-J. Tsai, C. W. Liu, and S. W. Lee, “Carbon mediation on the growth of self-assembled Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition,” 51st International Symposium of American Vacuum Society, Anaheim, CA, 2004.
  
• S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, and C. W. Liu, “The growth of high-quality SiGe films by introducing an intermediate Si:C layer,” 51st International Symposium of American Vacuum Society, Anaheim, CA, 2004.
  
• S. W. Lee, P. S. Chen, M. H. Lee, C. W. Liu and L. J. Chen, “The growth of high-quality SiGe films with an Intermediate Si layer for strained Si nMOSFETs,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
  
• P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M.-J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial SiGe:C and SiC thin films on Si(001) with ethylene (C2H4) precursor as carbon source,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
  
• “Invited” C. W. Liu, F. Yuan, Z. Pei, and J.-W. Shi, “Si/SiGe heterojunction phototransistor: physics and modeling,” Second International Symposium on Integrated Optoelectronics, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  
• P. S. Chen, Z. Pei, S. W. Lee, C. W. Liu, and M.-J. Tsai, “Nanostructure and optical properties of self-assembled Ge quantum dots grown in a hot wall UHV/CVD system,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  
• “Invited” C. W. Liu, S. Maikap, M.-H. Liao and F. Yuan., “BiCMOS devices under mechanical strain,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  
• S. T. Chang, M. H. Lee, and C. W. Liu, “Strained Si1-xCx on Field Transistor on SiGe Substrate,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  
• “Invited” C. W. Liu and B.-C. Hsu, “CMOS optoelectronics,” Advance Short-time Thermal Processing for Si-Based CMOS Devices II, 205th Meeting of Electrochemical Society, San Antonio, Texas, May 9-14, 2004.
  
• “Invited” M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y.-C. Lee, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W.-Y. Hsieh, and M.-J. Tsai, “The Noise Characteristics in Strained-Si MOSFETs,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
  
• C.-Y. Yu, T. C. Chen, S.-H. Huang, L. S. Lee, and C. W. Liu, “Electrical and Optical Reliability Improvement of HfO2 Gate Dielectric by Deuterium and Hydrogen Incorporation,” pp.165-168, 11th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2004.
  
• T. C. Chen, L. S. Lee, W. Z. Lai, and C. W. Liu, “The Characteristic of HfO2 on Strained SiGe,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
• P.J. Tzeng, S. Maikap, W. Z. Lai, C. S. Liang, P.S. Chen, L.S. Lee, C. W. Liu, “Post deposition annealing effects on the reliability of ALD HfO2 on strained SiGe layers,” pp.29-32, 11th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2004.
  
• C.-H. Lin, P.-S. Kuo, P. S. Chen, C.-Y. Yu, S. T. Chang, C. W. Liu, “Raising Operation Temperature of MOS Ge/Si Quantum Dot Infrared Photodetectors,” International Electron Devices and Materials Symposia (IEDMS), pp. 277-280, Hsinchu, Taiwan, 2004.
  
• P.-S. Kuo, C.-H. Lin, B.-C. Hsu, P.S. Chen, C.W. Liu “A Dual-bias Operated MOS Photodetector with Pt Gate,” International Electron Devices and Materials Symposia (IEDMS), pp. 411-414, Hsinchu, Taiwan, 2004.

• F. Yuan, Z. Pei, J.-W. Shi, S. T. Chang, and C. W. Liu, “Mextram Modeling of Si/SiGe Heterojunction Phototransistors,” International Semiconductor Device Research Symposium (ISDRS), pp. 92-93, Washington D.C., 2003.
  
• B.-C. Hsu, S. T. Chang, P.-S. Kuo, P. S. Chen, C. W. Liu, J.-H. Lu, and C. H. Kuan, “MOS Ge/Si Quantum Dot Infrared Photodetectors with Quantum Dot and Wetting Layer Responses,” International Semiconductor Device Research Symposium (ISDRS), pp. 491-492, Washington D.C., 2003.
  
• , J.-W. Shi, Y.-M. Hsu, F. Yuan, C.-S. Liang, Z. Pei, Y.M. Hsu, T.-M. Pan, Y. H. Liu, C. W. Liu, S.C. Lu, W. Y. Hsieh, and M.-J. Tsai, “Analysis on the temperature dependent characteristics of SiGe HBTs,”International Semiconductor Device Research Symposium (ISDRS), pp. 178-179, Washington D.C., 2003.
  
• Z. Pei, J.-W. Shi, Y.-M. Hsu, F. Yuan, C.-S. Liang, C. W. Liu, T.-M. Pan, S. C. Lu and M.-J. Tsai, “Integratable SiGe Phototransistor with High Speed (BW=3GHz) and Extremely-High Avalanche Responsivity,”International Semiconductor Device Research Symposium (ISDRS), pp. 18-19, Washington D.C., 2003.
  
• C.-Y. Liang, B.-C. Hsu, C.-H. Lin, S. T. Chang, and C. W. Liu, “Modeling and Simulation of High-bandwidth Si-based MOS/SOI Photodetectors,” International Semiconductor Device Research Symposium (ISDRS), pp. 230-231, Washington D.C., 2003.
  
• S. T. Chang, Y. H. Liu, and C. W. Liu, “Buried Oxide Thickness Effect and Lateral Scaling og SiGe HBT on SOI Substrate,” International Semiconductor Device Research Symposium (ISDRS), pp. 16-17, Washington D.C., 2003.
  
• M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, and M.-J. Tsai, “Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs,” 49th International Electron Devices Meeting (IEDM), Technical Digest, pp. 69-72, Washington D.C., Dec. 8-10, 2003. (Cited No./Self Cited No.= 14 / 7)
  
• S. W. Lee, P. S. Chen, L. J. Chen, and C. W. Liu, “The growth of high-quality uniform SiGe films by introducing an intermediate Si layer,” International Conference on Metallurgical Coatings and Thin Films (ICMCTF), pp. 78, San Diego, California, 2003.
  
• S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C.T. Chia, “Relief of strain in SiGe films with a buffer layer containing Ge quantum dots,” 8th IUMRS International Conference on Advanced Materials (IUMRS-ICAM), Yokohama, Japan, Oct. 8-13, 2003.
  
• “Invited” J.-W. Shi, Z. Pei, Y.-M. Hsu, F. Yuan, C.-S. Liang, Y.-T. Tseng, P.-S. Chen, C. W. Liu, S.-C. Lu, M.-J, Tsai, “Si/SiGe Heterojunction Phototransistor,”International Topical Meeting on Microwave Photonics, Budapest, Hungary, Sep., 2003.
  
• L. S. Lai, C. S. Liang, P. S. Chen, Y. M. Hsu, Y. H. Liu, Y. T. Tseng, S. C. Lu, M.-J. Tsai, and C. W. Liu, “Optimal SiGe:C HBT Module for BiCMOS Applications,” International Symposium VLSI Technology, System, and Applications, Oct. 6-8, 2003.
  
• P. S. Chen, S. W. Lee, Y. H. Peng, Z. Pei, M.-J. Tsai, and C. W. Liu, “Novel composite Ge/Si/Ge quantum dots with high PL efficiency and improved uniformity,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.
  
• H. C. Chen, S. W. Lee, S. L. Cheng, L. J. Chen, P. S. Chen and C. W. Liu, “Enhanced growth of amorphous interlayer in Ti thin films on strained Si/SiGe relaxed substrates,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.
  
• Y. H. Peng, J.-H. Lu, C. H. Kuan, C. W. Liu, P. S. Chen, M.-J. Tsai, S. W. Lee, L. J. Chen, M. H. Ya, Y. F. Chen, “Schottky Quantum Dots Infrared Photodetector with Far Infrared Response,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.
  
• L. S. Lai, Y. H. Liu, C. S. Liang, Y. T. Tseng, Y. M. Shiu, P. S. Chen, S. C. Lu, C. W. Liu and M.-J. Tsai, “The optimal base design for SiGe heterojunction bipolar transistors with high fT,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.
  
• W.-C. Hua, T.-Y. Yang, C. W. Liu, “The Comparison of Isolation Technologies and Device Models on SiGe Bipolar Low Noise Amplifier,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.
  
• S. W. Lee, P. S. Chen, Y. H. Peng, C. W. Liu and L. J. Chen, “Improved quality of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.

• B.-C. Hsu, S. T. Chang, C.-R. Shie, C.-C. Lai, P. S. Chen, and C. W. Liu, “High Efficient 820 nm MOS Ge Quantum Dot Photodetectors for Short Reach Integrated Optical Receivers,” 48th International Electron Devices Meeting (IEDM), Technical Digest, pp. 91-94, San Francisco, Dec. 8-11, 2002.
  
• Z. Pei, C. S. Liang, L. S. Lai, Y. T. Tseng, Y. M. Hsu, P. S. Chen, S. C. Lu, C. M. Liu, M.-J. Tsai and C.W. Liu, “High Efficient 850nm and 1310nm Multiple Quantum Well SiGe/Si Heterojunction Phototransistors with 1.25 Plus GHz Bandwidth,” 48th International Electron Devices Meeting (IEDM), Technical Digest, pp. 297-300, San Francisco, Dec. 8-11, 2002.
  
• F. Yuan, C.-H. Lin, C. -R. Shie, K.-F. Chen, M. H. Lee, and C. W. Liu, “Oxide Roughness Enhanced Reliability of MOS Tunneling Diodes,” International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, Sep. 17-19, 2002.
  
• B.-C. Hsu, W.-C. Hua, C.-R. Shie, C.-C. Lai, K.-F. Chen and C. W. Liu, “A Novel Ge MOS Detector for 1.3m and 1.5m Light Wave Communication,” 201st Meeting of Electrochemical Society, pp. 662, Philadelphia, May, 2002.
  
• W.-C. Hua, M. H. Lee, and C. W. Liu, “A Novel Gas Switching Method to Improve the Reliability of Rapid Thermal Oxide,” 201st Meeting of Electrochemical Society, Philadelphia, May, 2002.
  
• P. S. Chen, Y. D. Tseng, and C. W. Liu, “High Throughput UHV/CVD SiGe Process for SiGe HBT and Strained Si FET,” pp. 145-148, Semiconductor Manufacturing Technology Workshop, Taiwan, 2002.
• C. S. Liang, Y. M. Hsu, S. T. Chang, Y.-T. Tseng, L. S. Lai, and C. W. Liu, “Analysis of Collector Thickness Effect on the Cutoff Frequency of SiGe HBTs,” International Electron Devices and Materials Symposia (IEDMS), pp. 401-404, Taipei, Taiwan, 2002.
  
• C. C. Lee, K. F. Chen, C. Y. Wei, S. T. Chang, and C. W. Liu, “The effects of mobility and saturation velocity on deep submicron strained Si MOSFETs,” International Electron Devices and Materials Symposia (IEDMS), pp. 421-424, Taipei, Taiwan, 2002.
  
• S. T. Chang, C. Y. Lin, B.-C. Hsu, and C. W. Liu, “A Comprehensive and Experimentally Verified Electron Transport Model for Strained Silicon-Carbon Alloy,” International Electron Devices and Materials Symposia (IEDMS), pp. 274-277, Taipei, Taiwan, 2002.

• S. T. Chang, and C. W. Liu, “Effects of Recombination Lifetime and Velocity Saturation on Ge Profile Design for Base Transit Time of Si/SiGe HBTs,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 5-7, 2001; ISDRS Proceedings, pp. 490-493, 2001.
  
• C.-H. Lin, M. H. Lee, B.-C. Hsu, K.-F. Chen, C.-R. Shie, and C. W. Liu, “Oxide Roughness Enhanced Reliability of MOS Tunneling Diodes,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 5-7, 2001; ISDRS Proceedings, pp. 46-49, 2001. (1st place winner of Best Student Paper Award)
  
• B.-C. Hsu, W. T. Liu, C.-H. Lin and C. W. Liu, “Novel Photodetectors Using Metal-Oxide-Silicon Tunneling Structures,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 5-7, 2001; ISDRS Proceedings, pp. 42-45, 2001.
  
• S. T. Chang, C. W. Liu, and C.-H. Lin, “Optimum Ge Profile Design for Base Transit Time Minimization of SiGe HBT,” Asia-Pacific Microwave Conference (APMC), Dec. 3-6, 2001, Taipei, Taiwan; APMC Proceedings, Vol. 1 of 3, pp. 244-247, 2001.
  
• C.-H. Lin, M. H. Lee, B.-C. Hsu, and C. W. Liu, “Novel Methods to Incorporate Deuterium in the MOS Structures and Isotope Effects on Soft Breakdown and Interface States,” International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, Sep. 26-28, 2001; SSDM Proceedings, pp. 422-423, 2001.
  
• C. W. Liu, Y.-H. Liu, M. H. Lee, M.-J. Chen, and C.-F. Lin, “Metal-Oxide-Silicon Light Emitting Diodes Prepared by Rapid Thermal Oxidation,” Rapid Thermal and Other Short-time Processing Technology II, 199th Meeting of Electrochemical Society, Washington D.C., Mar. 25-29, 2001.
  
• C.-F. Lin, M.-J. Chen, M. H. Lee, and C. W. Liu, “Electroluminescence at Si Bandgap from Metal-Oxide-Semiconductor tunneling diodes,” Photonic West, International Society for Optical Engineering (SPIE), San Jose, CA, Jan. 21-26, 2001.

• B.-C. Hsu, W. T. Liu, C.-H. Lin, and C. W. Liu, “The Inversion Current of MOS Tunneling Diodes,” International Electron Devices and Materials Symposia (IEDMS), pp. 94-96, Chung-Li, Taiwan, Dec., 2000.
  
• M. H. Lee and C. W. Liu, “A Spike Ramp Design in a Rapid Thermal Processor,” International Electron Devices and Materials Symposia (IEDMS), pp. 117-120, Chung-Li, Taiwan, Dec., 2000.
  
• S. T. Chang, C. W. Liu, I. C. Lin, M.-J. Chen, and C.-F. Lin, “Comprehensive Study of Electroluminescence From the Metal Oxide Silicon Tunneling Diodes on (110) Substrates,” International Electron Devices and Materials Symposia (IEDMS), Chung-Li, Taiwan, Dec., 2000.
  
• C.-F. Lin, M.-J. Chen, E. Z. Liang, W. T. Liu, M. H. Lee, and C. W. Liu, , “Novel Electroluminescence from Metal-Insulator-Oxide Structures on Si,” Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), pp. 403-406, Melbourne, Australia, Dec. 6-8, 2000.
  
• M.-J. Chen, C.-F. Lin, J. J. Chiu, C. W. Liu, and S.-W. Chang, “Metal-Oxide-Semiconductor Light-Emitting Diodes at Si Bandgap Energy,” IEEE Conference on Lasers and Electro-Optics Europe (CLEO/Europe), Nice, France, Sep. 10-15, 2000.
  
• M. H. Lee and C. W. Liu, “Novel High Ramp-down Rate and Reflector Design in Rapid Thermal Process,” Rapid Thermal and Other Short-time Processing Technology, 197th Meeting of Electrochemical Society, Toronto, Canada, Mar. 14-18, 2000; ECS proceedings, Vol. 2000-9, pp. 437-444, 2000.

• C. W. Liu, M. H. Lee, C.-F. Lin, I. C. Lin, W. T. Liu, and H. H. Lin.” Light Emission and Detection by Metal Oxide Silicon Tunneling Diodes,” 45th International Electron Devices Meeting (IEDM), Technical Digest, pp. 749-752, Washington D.C., Dec. 5-8, 1999.
  
• C.-F. Lin, C. W. Liu, M.-J. Chen, M. H. Lee, and I. C. Lin, “Tunneling Induced Electroluminescence from Metal Oxide Semiconductor Structure on Silicon,” Photonic West, International Society for Optical Engineering (SPIE), San Jose, CA, Jan. 23-28, 2000; Proceedings of SPIE, Vol. 3953.
  
• S. Guo, A. Chen, C. W. Liu, A. Lin, and M. Lan, “Modeling and Optimization of Wafer-level Spatial Uniformity with the Use of Rational Subgrouping,” International Symposium on Semiconductor Manufacturing (ISSM), Santa Clara, CA, Oct. 11-13, 1999.
  
• M. H. Lee, Y. D. Tseng, C. W. Liu and J. C. Sturm, “Strain Relaxation of Si/Si1-x-yGexCy/Si Quantum Wells Grown by RTCVD,” Advanced Rapid Thermal Processing, 195th Meeting of The Electrochemical Society, Seattle, May 2-6, 1999; ECS proceedings, Vol. 99-10, pp. 299-306, 1999.
  
• C. W. Liu, M. H. Lee, I. C. Lin, W. T. Liu, and W. S. Kuo, “Metal Oxide Silicon Tunneling Photodetector,” Material Research Society Fall Meeting, Boston, 1999. (supported by NSC)
  
• L. C. Chen, C. Y. Wen, C. T. Wu, J.-J. Wu, K. H. Chen, W. T. Liu, and C. W. Liu, Structural and Electrical Characteristics of SiCN, Material Research Society Fall Meeting, Boston, 1999; MRSProceedings, Vol. 592, pp. 219-225, 2000.
  
• C. Y. Lin and C. W. Liu, “Valence Band Properties of Relaxed Ternary Group IV Semiconductor Alloys,” 12th International Conference on Ternary and Multinary Compounds, Hsinchu, Taiwan, Oct., 1999
  
• C. W. Liu, M. H. Lee, C. Y. Chao, C. Y. Chen, C. C. Yang, and Y. Chang, “RTP Temperature Measurements Using Si Grating Prepared by Laser Ablation for Large Diameter Wafer,” Rapid Thermal and Integrated Processing VII, Material Research Society, 1998; MRS Proceedings Vol. 525, pp. 121-126, 1998. (Supported by NSC 87-2218-E-002-005)

• M. H. Lee and C. W. Liu, “The Temperature Uniformity and Measurements of Rapid Thermal Process for Large Diameter Wafer Applications” International Electron Devices and Materials Symposia (IEDMS), pp. 118-124, Tainan, Taiwan, Dec., 1998.
  
• Y. D. Tseng, Y. S. Huan, C. W. Liu, and M. Y. Chern, “Thermal Stability of Si/SiGe/Si Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition,” International Electron Devices and Materials Symposia (IEDMS), pp. 98-101, Tainan, Taiwan, Dec., 1998.
  
• Y. L. Chen and C. W. Liu, “Device Modeling and Parameter Extraction of High Speed SiGe/Si HBTs for RF chip design,” International Conference on Computer Systems Technology for Industrial Applications, pp. 241-248, 1998.

• C. W. Liu, and J. C. Sturm, “The growth of -SiC on Si and poly-Si on-SiC by rapid thermal chemical vapor deposition,” Rapid Thermal and Integrated Processing VI, Material Research Society, 1998; MRS Proceedings Vol. 470, pp. 127-132, 1997. (Partially supported by NSC 86-2215-E-002-041)
  
• C. W. Liu and C. Y. Lin, “Hole Effective Masses in Relaxed SiC, GeC, and SiGe Alloys,” 7th International Symposium on Si Molecular Beam Epitaxy, Banff, Alberta, Canada, 1997 (supported by NSC 86-2215-E-002-041)
  
• C. Y. Lin and C. W. Liu, “Applications of Tight-Binding and k×p method to the Valence Band Properties of Relaxed Group IV Alloys,” Material Research Society Fall Meeting, 1997.

• M. N. V. Raghavan, V. Venkataraman, J. C. Sturm and C. W. Liu, “Hydrogen Passivation of Si/SiGe Heterostructure,” Material Research Society Spring Meeting, 1996.
  
• C. W. Liu, and V. Venkataraman, “Electron Cyclotron Resonance in Strained Si and SiGe Channels on Relaxed SiGe Buffers by RTCVD,” Rapid Thermal and Integrated Processing V, Material Research Society, 1996; MRS Proceedings Vol. 429, pp. 373-378, 1996. (Partially supported by NSC 85-2215-E-005-002)
  
• C. W. Liu, and V. Venkataraman, “Electron Effective Mass Measurements of Tensile Strained Si and Si0.94Ge0.06 Grown By Rapid Thermal Chemical Vapor Deposition,” International Electron Devices and Materials Symposia (IEDMS), pp. 56-56, Hsinchu, Taiwan, Dec., 1996. (Partially supported by NSC 85-2215-E-005-002)
  
• C. Y. Lin and C. W. Liu, “Hole Effective Mass Calculations of SiC and SiGe alloys,” International Electron Devices and Materials Symposia (IEDMS), Hsinchu, Taiwan, Dec., 1996. (NSC 85-2215-E-005-002)
  
• S. Madhavi, V. Venkataraman, C. W. Liu, and J. C. Sturm, “High Drift Velocity of 2DEG in Si/SiGe Heterostructures as Determined by Magnetoresistance Techniques,” Device Research Conference, Santa Barbara CA, 1996.
  
• J. C. Sturm, St. A. Amour, and C. W. Liu, “Rapid Thermal Chemical Vapor Deposition of Silicon-Based Heterostructures,” Transient Thermal Processing Techniques in Electronic Materials, 1996.

• C. W. Liu, A. St. Amour, J. C. Sturm, Y. Lacroix, and M. L. W Thewalt, “Defect-Free Band-Edge Photoluminescence in SiGeC Strained Layers Grown by Rapid Thermal Chemical Vapor Deposition,” Material Research Society, 1995; MRS Proceedings Vol. 379, pp. 441-446, 1995. (Partially supported by NSC 85-2215-E-005-002)

• S. -R. Jan, C. -Y. Chen, C. -H. Lee, S. -T. Chan, K. -L. Peng and C. W. Liu, “Influence of defects and interface on radiative transition of Ge” accepted by Appl. Phys. Lett., 2011.
• H. -S. Lan, S. -T. Chan, T. -H. Cheng, C. -Y. Chen, S. -R. Jan and C. W. Liu, “Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers” accepted by Appl. Phys. Lett., 2011.
  
• Cheng-Ming Lin, Yen-Ting Chen, Cheng-Hang Lee, Hung-Chih Chang, Wei-Chiang Chang, Huan-Lin Chang, and C. W. Liu, “Voltage Linearity Improvement of HfO2-Based Metal-Insulator-Metal Capacitors with H2O Prepulse Treatment” Journal of The Electrochemical Society, Vol. 158, No. 2, H128, 2011.

• (SCI, EI) H.-C. Sun, C.-F. Huang, Y.-T. Chen, T.-Y. Wu, C. W. Liu, Y.-J. Hsu, and J.-S. Chen “Threshold Voltage and Mobility Extraction of NBTI Degradation of Poly-Si Thin-Film Transistors” IEEE Transactions on Electron Devices,Vol. 57, No. 11, pp. 3186, 2010.
• (SCI, EI) Wen-Wei Hsu, Chao-Yun Lai, C. W. Liu, Chih-Hsin Ko, Ta-Ming Kuan, Tzu-Juei Wang, Wen-Chin Lee, and Clement H. Wann “Insulating Halos to Boost Planar NMOSFET Performance” IEEE Transactions on Electron Devices,Vol. 57, No. 10, pp. 2526, 2010.
• (SCI, EI) Yen-Ting Chen, Hung-Chang Sun, Ching-Fang Huang, Ting-Yun Wu, C. W. Liu, Yuan-Jun Hsu, and Jim-Shone Chen “Capacitorless 1T Memory Cells Using Channel Traps at grain boundaries,” IEEE Electron Device Letters, Vol. 31, No. 10, pp. 1125, 2010.
• (SCI, EI) W. Hsu, C. -Y. Peng, C. -M. Lin, Y. -Y. Chen, Y. -T. Chen, W. -S. Ho, and C. W. Liu,“Flexible single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain on polyimide substrates,” IEEE Electron Device Letters, Vol. 31, No. 5, pp. 422, 2010.
• (SCI, EI) T. -H. Cheng, K. -L. Peng, C. -Y. Ko, C. -Y. Chen, H. -S. Lan, Y. -R. Wu, C. W. Liu, and H. -H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett., Vol. 96, 211108, 2010.
• (SCI, EI) T. M. Lu*, C. -H. Lee, D. C. Tsui, and C. W. Liu, “Integration of complementary circuit and two-dimensional electron gas in a Si/SiGe heterostructure,” Appl. Phys. Lett., Vol. 96, 253103, 2010.
• (SCI, EI) C. -H. Lee, C. W. Liu, H. -T. Chang, and S. W. Lee, “Hexagonal SiGe Quantum Dots and Nanorings on Si(110),” J. Appl. Phys. 107, 056103, 2010
• (SCI, EI) T. -H. Cheng, C. -Y. Ko, C. -Y. Chen, K. -L. Peng, G. -L. Luo, C. W. Liu, and H. -H. Tseng, “Competitiveness between direct and indirect radiative transitions of Ge,” Appl. Phys. Lett., Vol. 96, 091105, 2010.
• (SCI, EI) S. W. Lee, H. T. Chang,C. -H. Lee, S. L. Cheng and C. W. Liu, “Composition redistribution of self-assembled Ge islands on Si (001) during annealing,” Thin Solid Film, Vol. 518, pp. S196, 2010.
• 
  
• (SCI, EI) C.-H. Lin* and C. W. Liu, “Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions,” Thin Solid Films, Vol. 518, pp. S237-S240, 2010.

• (SCI, EI) S. W. Lee, C. -H. Lee, H. T. Chang, S. L. Cheng and C. W. Liu, “Evolution of composition distribution of Si-capped Ge islands on Si(001),” Thin Solid Film, Vol. 517, pp. 5029, 2009
• W. -L. Hsu, Y. -H. Pai, F. -S. Meng, C. W. Liu, and G. -R. Lin, “Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film,” Appl. Phys. Lett., Vol. 93(23), 231906 - 231906-3, 2009.
• (SCI, EI) C.-Y. Peng, Y.-C. Fu, C.-F. Huang, Y.-J. Yang, S.-T. Chang, and C.W. Liu, “Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors,” IEEE Trans. on Electron Devices, Vol. 56, No. 8, pp. 1736-1745, 2009.
• (SCI, EI) W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, Y.-Y. Chen, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide detectors,” Appl. Phys. Lett., Vol. 94, 261107, 2009.
• (SCI, EI) T. M. Lu*, D. C. Tsui, C. -H. Lee and C. W. Liu, “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs,” Appl. Phys. Lett., Vol. 94, 182102, 2009.
• (SCI, EI) C.-Y. Peng, C.-F. Huang, Y.-C. Fu, Y.-H. Yang, C.-Y. Lai, S.-T. Chang, and C. W. Liu, “Comprehensive study of the Raman shifts of strained silicon and germanium,” J. Appl. Phys., Vol. 105, 083537, 2009.
• (SCI, EI) P.-S. Kuo, C.-Y. Peng, C.-H. Lee, Y.-Y. Shen, H.-C. Chang, and C. W. Liu, “Si/Si0.2Ge0.8/Si quantum well Schottky barrier diodes,” Appl. Phys. Lett., Vol. 94, 103512, 2009.
• (SCI, EI) T.-H. Cheng, P.-S. Kuo, C.-Y. Ko, and C.-Y. Chen, and C. W. Liu, “Electroluminescence from monocrystalline silicon solar cell,” J. Appl. Phys., Vol. 105, 106107,2009.
• (SCI, EI) C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” J. Nanosci. Nanotech., Vol. 9, No. 6, pp. 3622-3626, 2009.
• (SCI, EI) C.-H. Lee, Y.-Y. Shen, C. W. Liu, S. W. Lee, B.-H. Lin, and C.-H. Hsu, “SiGe nanorings by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett., Vol. 94, 141909, 2009.
• W.-L. Hsu, C.-T. Lin, T.-H. Cheng, S.-C. Yen, C. W. Liu, D.-P. Tsai, and G.-R. Lin, “Annealing induced refinement on optical transmission and electrical resistivity of indium tin oxide,” Chinese Optics Letters, Vol. 7, No. 3, March 10, 2009.
• (SCI, EI) C.-F. Huang, H.-C. Sun, Y.-J. Yang, C.-Y. Peng, Y.-T. Chen, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Dynamic bias instability on p-channel polycrystalline silicon thin-film transistors induced by impact ionization,” IEEE Elec. Dev. Lett., Vol. 30, No. 4, pp. 368-370, 2009.
• (SCI, EI) W. S. Ho, C.-H. Lin, T.-H. Cheng, W. W. Hsu, Y. -Y. Chen, P. -S. Kuo, and C. W. Liu, “Narrow-Band Metal-Oxide-Semiconductor Photodetectors,” Appl. Phys. Lett., Vol. 94, 061114, 2009.

• (EI) A. A. Abramov, C.-H. Lin, and C.W. Liu, “Fano interference in the Quantum Well-quantum dot system,” accepted by International Journal of Nanoscience, Vol. 7, Nos. 4&5, pp. 181-186, 2008.
• (SCI, EI) S.-R. Jan, T.-H. Cheng, T.-A. Hung, P.-S. Kuo, M. H. Liao, Y. Deng, and C. W. Liu, “Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes,” IEEE Trans. on Electron Devices, Vol. 55, No. 12, pp. 3590-3593, 2008.
• (SCI, EI) C.-F. Huang, C.-Y. Peng, Y.-J. Yang, H.-C. Sun, H.-C. Chang, P.-S. Kuo, H.-L. Chang, C.-Z. Liu, and C. W. Liu, “Stress-induced hump effects of p-channel polycrystalline silicon thin-film transistors,” IEEE Electron Device Letters, Vol. 29, No. 12, pp. 1332-1335, 2008.
• (SCI, EI) C.-H. Lin, C.-Y. Yu, C.-C. Chang, C.-H. Lee, Y.-J. Yang, W. S. Ho, Y.-Y. Chen, M. H. Liao, C.-T. Cho, C.-Y. Peng, and C. W. Liu, “SiGe/Si Quantum-Dot Infrared Photodetectors With δ doping,” IEEE Trans. Nanotech.,Vol. 7, No. 5, pp. 558-564, 2008.
• (SCI, EI) W.-S. Liao*, Y.-G. Liaw, M.-C. Tang, S. Chakraborty, and C. W. Liu, “Investigation of Reliability Characteristics in NMOS and PMOS FinFETs," IEEE Electron Device Letters, Vol. 29, No. 7, pp. 788-790, 2008.
• (SCI, EI) H.-L. Chang, P.-S. Kuo, W.-C. Hua, C.-P. Lin, C.-Y. Lin, and C. W. Liu, “Reduction of crosstalk between dual power amplifiers using laser treatment,” IEEE Microwave. Wireless Compon. Lett., Vol. 18, No. 9, pp. 602-604, Sep. 2008.
• (SCI, EI) C.-H. Lee, C.-Y. Yu, C. M. Lin, C.W. Liu, H. Lin, and W.-H. Chang, “Carrier gas effects on the SiGe quantum dots formation,” Applied Surface Science, Vol. 254, No. 19, pp. 6257-6260, 2008.
• (SCI, EI) S. W. Lee*, P. S. Chen, S. L. Cheng, M. H. Lee, H. T. Chang, C.-H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition,” Applied Surface Science, Vol. 254, No. 19, pp. 6261-6264, 2008.
• (SCI, EI) P. S. Chen*, S. W. Lee, M. H. Lee, and C. W. Liu, “Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing”, Applied Surface Science, Vol. 254, No. 19, pp. 6076-6080, 2008.
• (SCI, EI) W.-S. Liao*, S.-Y. Huang, M.-C. Tang, Y.-G Liaw, K.-M. Chen, Tommy Shih, H.-C. Tsen, L. Chung, and C. W. Liu, “Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining,” Jpn J. Appl. Phys. L3127-3129, April, 2008.
  
• (SCI, EI) M. H. Liao, Lingyen Yeh, T.-L. Lee, C. W. Liu and M.-S. Liang, “Superior n-MOSFET performance by optimal stress design,” IEEE Electron Device Letters, 29(4), pp. 402-404, 2008.
• (SCI, EI) T.-H. Cheng, M. H. Liao, Lingyen Yeh, T.-L. Lee, M.-S. Liang, and C. W. Liu, “Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors,” J. Appl. Phys.,103, 016103, 2008.
• (SCI, EI) M. H. Liao, T.-H. Cheng, C. W. Liu, Lingyen Yeh, T.-L. Lee, and M.-S. Liang, “2.0 μm electroluminescence from the Si/Si0.2Ge0.8 type II heterojunction,” J. Appl. Phys., Vol. 103, 013105,2008.
• (SCI, EI) W.-S. Liao*, Y.-G. Liaw*, M.-C. Tang, K.-M. Chen*, S.-Y. Huang, C.-Y. Peng, and C. W. Liu, “PMOS hole mobility enhancement through SiGe conductive channel and highly compressive ILD-SiNx stressing layer,” IEEE Electron Device Letters, Vol. 29, No. 1, pp. 86-88, 2008.

• (SCI, EI) S. Maikap*, M. H. Lee, S. T. Chang, and C. W. Liu, “Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate,” Semicond. Sci. Technol, Vol. 22 pp. 342-347, 2007.
• (SCI, EI) P.-S. Kuo, Y.-C. Fu, C.-C. Chang, C.-H. Lee and C. W. Liu, “Dark current reduction of Ge MOS photodetectors by high work function electrodes,” Electronics Lett., Vol. 43, Issue. 20, pp. 1113-1114, 2007.
• (SCI, EI) Y.-J. Yang, W. S. Ho, C.-F. Huang, S. T. Chang, and C. W. Liu, “Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect-transistors,” Appl. Phys. Lett., Vol. 91, 102103, 2007; also in Virtual Journal of Nanoscale Science & Technology, Vol. 16, Issue. 12, 2007.
• (SCI, EI) M. H. Liao, C.-H. Lee, T.-A. Hung, and C. W. Liu, “The intermixing and strain effects on electroluminescence of SiGe dots,” J. Appl. Phys., Vol. 102, 053520,2007.
• (SCI, EI) P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu, “Transport mechanism of SiGe dot MOS tunneling diodes,”IEEE Electron Device Letters, Vol. 28, No. 7, pp. 596-598, 2007.
• (SCI, EI) C.-H. Lin, Y.-T. Chiang, C.-C. Hsu, C.-H. Lee, C.-F. Huang, C.-H. Lai, T.-H. Cheng, and C. W. Liu “Ge-on-glass Detectors,” Appl. Phys. Lett., Vol. 91, 041105, 2007.
• (SCI, EI) T.-C. Chen, C.-Y. Peng,M. H. Liao,C.-H. Tseng, P.-S. Chen, M.-Y. Chern, and C. W. Liu, “Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer deposition,”IEEE Trans. on Electron Devices, Vol. 54, pp. 759-776, 2007.
• (SCI, EI) C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W.-S. Ho and C. W. Liu, “Broadband SiGe/Si quantum dot infrared photodetectors,” J. Appl. Phys.,Vol. 101, No. 3, 033117, 2007.
• (SCI, EI) C.-Y. Peng, F. Yuan, M. H. Lee, C.-Y. Yu, S. Maikap, S. T. Chang, P.-S. Kuo, and C. W. Liu, “Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si,” Appl. Phys. Lett., Vol. 90, 012114, 2007.
• (SCI, EI) W.-C. Hua, H.-L. Chang, T. Wang, C.-Y. Lin, C.-P. Lin, S. S. Lu, C. C. Meng, and C. W. Liu, “Performance enhancement of the nMOSFET low noise amplifier by package strain,” IEEE Trans. Electron Devices, Vol. 54, No. 1, pp. 160-162, Jan. 2007.

• (SCI, EI) M. H. Liao, T.-H. Cheng, and C. W. Liu, “Infrared emission from Ge metal-insulator-semiconductor tunneling diodes,” Appl. Phys. Lett., Vol. 89, 261913, 2006.
  
• (SCI, EI) C.-Y. Yu, C.-J. Lee, C.-Y. Lee, J.-T. Lee, M. H. Liao, and C. W. Liu, “The Buckling Characteristics of SiGe Layers on Viscous Oxide,” J. of Appl. Phys., Vol. 100, 063510, 2006.
• (SCI, EI) C.-Y. Yu, C.-Y. Lee, C.-H. Lin, and C. W. Liu, “Low-Temperature Fabrication and characterization of Ge-on-Insulator structures,” Appl. Phys. Lett., Vol. 89, 101913, 2006.
  
• (SCI, EI) C.-F. Huang, Y.-J. Yang, C.-Y. Peng, F. Yuan, and C. W. Liu, “Mechanical Strain Effect of N-channel Poly-Si Thin-Film Transistors,” Appl. Phys. Lett., Vol. 89, 103502, 2006.
  
• (SCI, EI) Y. M. Lin*, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, “Hole Confinement and 1/f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal-Oxide-Semiconductor Field-Effect Transistors,” Part1 Lett., Jpn. J. Appl. Phys., Vol. 45, No. 5A, pp. 4006-4008, 2006.
  
• (SCI, EI) S. W. Lee, Y. L. Chueh, H. C. Chen, L. J. Chen*, P. S. Chen, L. J. Chou, and C. W. Liu, “Field emission properties of self-assembled Si-capped Ge quantum dots,” Thin Solid Films, Vol. 508, pp. 218-221, 2006.
  
• (SCI, EI) S. W. Lee, P. S. Chen, T. Y. Chien, L. J. Chen*, C. T. Chia, and C. W. Liu, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” Thin Solid Films, Vol. 508, pp. 120-123, 2006.
  
• (SCI, EI) J.-W. Shi*, P.-H. Chiu, F.-H. Huang, and Y.-S. Wu, Ja-Yu Lu, C.-K. Sun, and C.-W. Liu, P.-S. Chen, “Si/SiGe-Based Edge-Coupled Photodiode with Partially P-Doped Photo-absorption Layer for High Responsivity and High-Power Performance,”Appl. Phys. Lett., Vol. 88, 193506, 2006.
  
• (SCI, EI) M. H. Liao, P.-S. Kuo, S.-R. Jan, S.-T. Chang, C. W. Liu, “Strained Pt Schottky diodes on n-type Si and Ge,” Appl. Phys. Lett., Vol. 88, 143509, 2006.
  
• (SCI, EI) M. H. Liao, C.-Y. Yu, T.-H. Guo, C.-H. Lin, and C. W. Liu, “Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes,” IEEE Electron Device Letters, Vol. 27, No.4, pp. 252-254, 2006.
  
• (SCI,EI) F. Yuan, C.-F. Huang, M.-H. Yu, and C. W. Liu, “Performance Enhancement of Ring Oscillators and Transimpedance Amplifiers by Package Strain,” IEEE Trans. on Electron Devices, Vol. 53, No. 4, pp. 724-729, 2006.
  
• (SCI, EI) C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, T.-H. Kuo, and C. W. Liu, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” Thin Solid Films, Vol. 508, pp. 389-392, 2006.
  
• (SCI, EI) P. S. Chen*, S. W. Lee, M. H. Lee and C. W. Liu, “Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs, ” Semicond. Sci. Technol, Vol. 21, pp. 479-485, 2006.
  
• (SCI) J.-Y. Wei, S. Maikap, M. H. Lee, C. C. Lee, and C. W. Liu, “Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices,” Solid State Electronics, Vol. 50, pp. 109-113, 2006.
  
• (SCI, EI) S. L. Wu*, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced CMOS Performances Using Substrate Strained-SiGe and Mechanical Strained-Si Technology,” IEEE Electron Device Letters, Vol. 27, No. 1, pp. 46-48, 2006.

• (SCI, EI) Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen, C. W. Liu, “SiGe/Si PMOSFET using graded channel technique,” Materials Science in Semiconductor Processing, Vol. 8, pp. 347-351, 2005.
  
• (SCI, EI) S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M.-J. Tsai, and C. W. Liu, “Formation of SiCH6-mediated Ge quantum dots with strong field emission properties by ultra-high vacuum chemical vapor deposition,” J. Appl. Phys., Vol. 98, pp. 073506, 2005.
  
• (SCI, EI) C. C. Yeo, B. J. Cho, F. Gao, S. J. Lee, M. H. Lee, C.-Y. Yu, C. W. Liu, L. J. Tang, and T. W. Lee, “Electron Mobility Enhancement Using Ultrathin Pure Ge on Si Substrate,” IEEE Electron Device Letters, Vol. 26, No. 10, pp. 761-763, 2005.
  
• (SCI, EI) “Invited” C. W. Liu, S. Maikap, and C.-Y. Yu, “Mobility-enhancement Technologies,” IEEE Circuit and Device Magazine, Vol. 21, No. 3, pp. 21-36, May, 2005.
  
• (SCI) S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M. H. Lee, M.-J. Tsai, and C. W. Liu, “The growth of strained Si on high-quality relaxed Si1-xGex with an intermediate Si1-yGey layer,” J. Vac. Sci. Tech. A, Vol. 23, No. 4, pp.1141-1145, 2005.
  
• K. F. Liao, S. W. Lee, L. J. Chen, P. S. Chen, and C. W. Liu, “Formation of thin relaxed SiGe buffer layer with H-implantation dose and thermal annealing,” Nuclear Inst. and Methods in Physics Research, B, Vol. 237, No. 1-2, pp. 217-222, 2005.
  
• (SCI, EI) W.-C. Hua, M. H. Lee, P. S. Chen, S. C. Lu, M.-J. Tsai, and C. W. Liu, “Threading Dislocation Induced Low Frequency Noise in Strained-Si nMOSFETs,” IEEE Electron Device Letters, Vol. 26, No. 9, pp. 667-669, 2005.
  
• (SCI,EI) M. H. Liao, S. T. Chang, M. H. Lee, S. Maikap, and C. W. Liu, “Abnormal hole mobility of biaxial strained Si,” J. Appl. Phys., Vol. 98, pp. 066104, 2005.
  
• (SCI, EI) M.-H. Liao, T. C. Chen, M. J. Chen, and C. W. Liu, “Electroluminescence from metal/oxide/strained-Si tunneling diodes,” Appl. Phys. Lett., Vol. 86, No. 22, 223502, 2005.
  
• (SCI, EI, 4 pages) C.-Y. Yu, P.-W. Chen, S.-R. Jan, M.-H. Liao, K.-F. Liao, and C. W. Liu, “Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers,” Appl. Phys. Lett., Vol. 86, No. 1, 011909, 2005.
  
• (SCI, EI, 5 pages) T. C. Chen, L. S. Lee, W. Z. Lai and C. W. Liu, “The Characteristic of HfO2 on Strained SiGe,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 209-213, 2005.
  
• (SCI, EI, 5 pages) P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M.-J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 15-19, 2005.
• (SCI,EI)K. F. Liao, P. S. Chen, S. W. Lee, L. J. Chen, and C. W. Liu, “Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing,” Nucl. Instr. Methods B. 237, 217-222 ,2005.
  
• (SCI, EI, 5 pages) Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, “SiGe/Si PMOSFET Using Graded Channel Technique,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 347-351, 2005.

• (SCI, EI) P. S. Chen, S. W. Lee, Y. H. Peng, C. W. Liu, and M.-J. Tsai, “Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer,” Phys. Stat. Sol. (b), Vol. 241, No. 15, pp. 3650-3655, 2004.
  
• (SCI, EI, 3 pages) C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C.-Y. Yu, J.-Y. Wei, and S. Maikap, “Evidence of Si/SiGe heterojunction roughness scattering,” Appl. Phys. Lett., Vol. 85, No. 21, pp. 4947-4949, 2004.
  
• (SCI, EI, 3 pages) Y. H. Peng, C.-H. Hsu, C. H. Kuan, C. W. Liu, P. S. Chen, M.-J. Tsai, and Y. W. Suen, “The evolution of electroluminescence in Ge quantum-dot diodes with the fold number,” Appl. Phys. Lett., Vol. 85, No. 25, pp. 6107-6109, 2004.
  
• (SCI, EI, 3 pages) P.-S. Kuo, B.-C. Hsu, P.-W. Chen, P. S. Chen, and C. W. Liu, “Recessed Oxynitride Dots on Self-assembled Ge Quantum Dots Grown by Liquid Phase Deposition,” Electrochemical and Solid-State Letters, Vol. 7, No. 10, pp. G201-G203, 2004.
  
• (SCI, EI, 5 pages) C. Y. Lin, S. T. Chang, and C. W. Liu, “Hole effective mass in strained Si1-xCx alloys,” J. Appl. Phys., Vol. 96, No. 9, pp. 5037-5041, 2004.
  
• (SCI, EI, 8 pages) J.-W. Shi, Y.-H. Liu, and C. W. Liu, “Design and Analysis of Separate-Absorption-Transport- Charge-Multiplication Traveling-Wave Avalanche Photodetectors,” IEEE/OSA, Journal of Lightwave Technology, Vol. 22, No. 6, pp. 1583-1590, 2004.
  
• (SCI, EI, 7 pages) F. Yuan, J.-W. Shi, Z. Pei, and C. W. Liu, “MEXTRAM Modeling of Si/SiGe Heterojunction Phototransistors,” IEEE Trans. on Electron Devices, Vol. 51, No. 6, pp. 870-876, 2004.
  
• (SCI, EI, 3 pages) S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu, “Mechanically strained strained-Si NMOSFETs,” IEEE Electron Device Letters, Vol. 25, No. 1, pp. 40-42, 2004.
  
• (SCI, EI, 3 pages) Z. Pei, J.-W. Shi, Y.-M. Hsu, F. Yuan, C. S. Liang, S. C. Lu, W. Y. Hsieh, M.-J. Tsai, and C. W. Liu, “Bandwidth Enhancement in an Integratable SiGe phototransistor by Removal of Excessive Carrier,” IEEE Electron Device Letters, Vol. 25, No. 5, pp. 286-288, 2004.
• (SCI, EI, 4 pages) W.-C. Hua, T.-Y. Yang, and C. W. Liu, “The Comparison of Isolation Technologies and Device Models on SiGe Bipolar Low Noise Amplifier,” Applied Surface Science, Vol. 224, No. 1-4, pp. 425-428, 2004.
  
• (SCI, EI, 3 pages) T. C. Chen, W. Z. Lai, C. Y. Liang, M. J. Chen, L. S. Lee, and C. W. Liu, “Light Emission From Al/HfO2/Silicon Diodes,” J. Appl. Phys., Vol. 95, No. 11, pp. 6486-6488, 2004.
  
• (SCI, EI, 3 pages) W.-C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu, and K. M. Chen, “Ge Outdiffusion Effect on Flicker Noise in Strained-Si NMOSFETs,” IEEE Electron Device Letters, Vol. 25, No. 10, pp. 693-695, 2004.
  
• (SCI, EI, 3 pages) F. Yuan, S.-R. Jan, S. Maikap, Y.-H. Liu, C.-S. Liang, and C. W. Liu, “Mechanically strained Si/SiGe HBTs,” IEEE Electron Device Letters, Vol. 25, No. 7, pp. 483-485, 2004.
  
• (SCI, EI, 3 pages) J.-W. Shi, Z. Pei, F. Yuan, Y.-M. Hsu, C. W. Liu, S. C. Lu, and M.-J. Tsai, “Performance Enhancement of High-Speed SiGe Based Heterojunction Phototransistor with Substrate Terminal,” Appl. Phys. Lett., Vol. 85, No. 14, pp. 2947-2949, 2004.
  
• (SCI, EI, 3 pages) B.-C. Hsu, C.-H. Lin, P.-S. Kuo, S. T. Chang, P. S. Chen, C. W. Liu, J.-H. Lu, and C. H. Kuan, “Novel MIS Ge-Si Quantum-Dot Infrared Photodetectors,” IEEE Electron Device Letters, Vol. 25, No. 8, pp. 544-546, 2004.
  
• (SCI, 9 pages) S. T. Chang, C. W. Liu, and S. C. Lu, “Base Transit Time of Graded-Base Si/SiGe HBTs Considering Recombination Lifetime and Velocity Saturation,” Solid State Electronics, Vol. 48, No. 2, pp. 207-215, 2004.
  
• (SCI, EI, 4 pages) S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, W. Y. Chen, and T. M. Hsu, “Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments,” Applied Surface Science, Vol. 224, No. 1-4, pp. 152-155, 2004. (Cited No./Self Cited No.= 4 / 1)
  
• (SCI, EI, 4 pages) S. W. Lee, P. S. Chen, M.-J. Tsai , C. T. Chia, C. W. Liu, and L. J. Chen, “The growth of high-quality SiGe films with an intermediate Si layer,” Thin Solid Film, Vol. 447-448, pp. 302-305, 2004.

• (SCI, EI, 3 pages) Z. Pei, C. S. Liang, L. S. Lai, Y. T. Tseng, Y. M. Hsu, P. S. Chen, S. C. Lu, M.-J. Tsai, and C. W. Liu, “A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor,” IEEE Electron Device Letters, Vol. 24, No. 10, pp. 643-645, 2003.
  
• (SCI, EI, 4 pages) M. H. Lee, C.-Y. Yu, F. Yuan, K.-F. Chen, C.-C. Lai, and C. W. Liu, “Reliability Improvement of Rapid Thermal Oxide Using Gas Switching,” IEEE Trans. Semiconductor Manufacturing, Vol. 16, No. 4, pp. 656-659, 2003.
  
• (SCI, EI, 3 pages) S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Self-assembled Nanorings in Si-capped Ge quantum dots on (001) Si,” Appl. Phys. Lett., Vol. 85, No. 23, pp. 5283-5285, 2003. (This paper has been selected for the issue of the Virtual Journal of Nanoscale Science & Technology, Vol. 8, No. 26, Dec. 29, 2003.)
• (invited) C. W. Liu and L. J. Chen, “SiGe/Si Heterostructures,” Encyclopedia of Nanoscience and Nanotechnology, American Scientific Publishers, 2003.
• (SCI, EI, 7 pages) M.-J. Chen, J.-F. Chang, J.-L. Yen, C. S. Tsai, E.-Z. Liang, C.-F. Lin, and C. W. Liu, “Electroluminescence and photoluminescence studies on carrier radiative and nonradiative recombinations in metal-oxide-silicon tunneling diodes,” J. Appl. Phys., Vol. 93, No. 7, pp. 4253-4259, 2003.
  
• (SCI, EI, 3 pages) B.-C. Hsu, S. T. Chang, T.-C. Chen, P.-S. Kuo, P. S. Chen, and C. W. Liu, “A High Efficient 820 nm MOS Ge Quantum Dot Photodetector,” IEEE Electron Device Letters, Vol. 24, No. 5, pp. 318-320, 2003.
  
• (SCI, EI, 3 pages) C. W. Liu, B.-C. Hsu, K.-F. Chen, M. H. Lee, C.-R. Shie, and P.-S. Chen, “Strain-induced growth of SiO2 dots by liquid phase deposition,” Appl. Phys. Lett., Vol. 82, No. 4, pp. 589-591, 2003. (This paper has been selected for the issue of the Virtual Journal of Nanoscale Science & Technology, Vol. 7, No. 5, Feb. 3, 2003.)
  
• (SCI, 4 pages) C.-H. Lin, F. Yuan, B.-C Hsu, and C. W. Liu, “Isotope effect of hydrogen release in metal/ oxide/n-silicon tunneling diodes,” Solid-State Electronics, Vol. 47, pp. 1123-1126, 2003.
  
• (SCI, EI, 3 pages) B.-C. Hsu, W.-C. Hua, C.-R. Shie, K.-F. Chen, and C. W. Liu, “The Growth and Electrical Characteristics of Liquid Phase Deposition SiO2 on Ge,” Electrochemical and Solid State Letters, Vol. 6, No. 2, pp. F9-F11, 2003.

• (SCI, EI, 5 pages) B.-C. Hsu, K.-F. Chen, C.-C. Lai, and C. W. Liu, “Oxide Roughness Effect on Tunneling Current of MOS Diodes,” IEEE Trans. Electron Device, Vol. 49, No. 12, pp. 2204-2208, 2002.
  
• (SCI, EI, 3 pages) C.-H. Lin, F. Yuan, C.-R. Shie, K.-F. Chen, B.-C. Hsu, M. H. Lee, and C. W. Liu, “Roughness- Enhanced Reliability of MOS Tunneling Diodes,” IEEE Electron Device Letters, Vol. 23, No. 7, pp. 431-433, 2002.
  
• (SCI, EI, 7 pages) S. T. Chang, C. Y. Lin, and C. W. Liu, “Energy Band Structure of Strained Si1-xCx alloys on Si(001) Substrate,” J. Appl. Phys., Vol. 92, No. 7, pp. 3717-3723, 2002.
  
• (SCI, 4 pages) S. T. Chang, K.-F. Chen, C.-R. Shie, C. W. Liu, M.-J. Chen, and C.-F. Lin, “The band-edge light emission from the metal-oxide-silicon tunneling diode on (110) substrates,” Solid State Electronics, Vol. 46, No. 8, pp. 1113-1116, 2002.
  
• (SCI, EI, 3 pages) M. H. Lee, K.-F. Chen, C.-C. Lai, C. W. Liu, W.-W. Pai, M.-J. Chen and C.-F. Lin, “The roughness-enhanced light emission from metal- oxide-silicon light-emitting diodes using very high vacuum prebake,” Part2 Lett., Jpn. J. Appl. Phys., Vol. 41, No. 3B, pp. L326-L328, 2002.

• (SCI, EI, 3 pages) M. H. Lee, C.-H. Lin, and C. W. Liu, “Novel Methods to Incorporate Deuterium in the MOS Structures,” IEEE Electron Device Letters, Vol. 22, No. 11, pp. 519-521, 2001.
  
• (SCI, EI, 3 pages) M.-J. Chen, C.-F. Lin, M. H. Lee, S. T. Chang, and C. W. Liu, “Carrier lifetime measurement on Electroluminescent Metal-Oxide-Silicon Tunneling Diodes,” Appl. Phys. Lett., Vol. 79, No. 14, pp. 2264-2266, 2001.
  
• (SCI, EI, 6 pages) C.-H. Lin, B.-C. Hsu, M. H. Lee, and C. W. Liu, “A Comprehensive Study of Inversion Current in MOS Tunneling diodes,” IEEE Trans. Electron Device, Vol. 48, No. 9, pp. 2125-2130, 2001.
• (SCI, EI, 3 pages) B.-C. Hsu, W. T. Liu, C.-H. Lin, and C. W. Liu, “A PMOS Tunneling Photodetector,” IEEE Trans. Electron Device, Vol. 48, No. 8, pp. 1747-1749, 2001.
  
• (SCI, EI, 5 pages) M. H. Lee and C. W. Liu, “A Novel Illuminator Design in a Rapid Thermal Process,” IEEE Trans. Semiconductor Manufacturing, Vol. 14, No. 2, pp. 152-156, 2001.
  
• (SCI, EI, 3 pages) C. W. Liu, C.-H. Lin, M. H. Lee, S. T. Chang, Y. H. Liu, M.-J. Chen, and C.-F. Lin, “Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation,” Appl. Phys. Lett., Vol. 78, No. 10, pp. 1397-1399, 2001.
  
• (SCI, EI, 3 pages) C.-F. Lin, M.-J. Chen, S.-W. Chang, P.-F. Chung, E.-Z. Liang, T.-W. Su, and C. W. Liu, “Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si Contact,” Appl. Phys. Lett., Vol. 78, No. 13, pp. 1808-1810, 2001.
  
• (SCI, EI, 3 pages) C.-H. Lin, M. H. Lee, and C. W. Liu, “Correlation between Si-H/D bond desorption and injected electron energy in MOS tunneling diodes,” Appl. Phys. Lett., Vol. 78, No. 5, pp. 637-639, 2001.
  
• (SCI, EI, 4 pages) M.-J. Chen, C.-F. Lin, W. T. Liu, S. T. Chang, and C. W. Liu, “Visible and Band-Edge Electroluminescence from ITO/SiO2/Si metal oxide semiconductor structures,” J. Appl. Phys., Vol. 89, No. 1, pp. 323-326, 2001.
  
• (SCI, EI, 3 pages) C.-F. Lin, M.-J. Chen, E.-Z. Liang, W. T. Liu, and C. W. Liu, “Reduced temperature dependence of luminescence from Silicon due to Field-Induced Carrier Confinement,” Appl. Phys. Lett., Vol. 78, No. 3, pp. 261-263, 2001.
  
• (SCI, EI, 4 pages) C. W. Liu and Y. D. Tseng, and M. Y. Chern, “Asymmetrical x-ray reflection of SiGeC/Si Heterostructures,” Materials Chemistry and Physics, Vol. 69, No. 1-3, pp. 274-277, 2001. (Best paper award, Materials Chemistry and Physics, 2001.)

• (SCI, EI, 3 pages) C. W. Liu, S. T. Chang, W. T. Liu, M.-J. Chen, and C.-F. Lin, “Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 77, No. 26, pp. 4347-4349, 2000.
  
• (SCI, EI, 3 pages) C. W. Liu, M. H. Lee, S. T. Chang, M.-J. Chen, and C.-F. Lin, “Room-temperature electroluminescence from the metal oxide silicon tunneling diodes on (110) substrates,” Jpn. J. Appl. Phys., Vol. 39, No. 10B, pp. L1016 - L1018, 2000.
  
• (SCI, EI, 3 pages) C. W. Liu, M. H. Lee, M.-J. Chen, C.-F. Lin, and M. Y. Chern, “Roughness-Enhanced Electroluminescence from Metal Oxide Silicon Tunneling Diodes,” IEEE Electron Device Letters, Vol. 21, No. 12, pp. 601-603, 2000.
  
• (SCI, EI, 3 pages) C. W. Liu, M.-J. Chen, I. C. Lin, M. H. Lee, and C.-F. Lin, “Temperature dependence of the electron-hole-plasma electroluminescence from the metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 77, No. 8, pp. 1111- 1113, 2000.
  
• (SCI, EI, 3 pages) C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Letters, Vol. 21, No. 6, pp. 307-309, 2000.
  
• (SCI, 4 pages) C. W. Liu and T. X. Hsieh, “Analytic modeling of the subthreshold behavior in MOSFETs,” Solid State Electronics, Vol. 44, No. 9, pp. 1707-1710, 2000.
  
• (SCI, EI, 6 pages) C.-F. Lin, C. W. Liu, M.-J. Chen, M. H. Lee, and I. C. Lin, “Infrared Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon,” Journal of Physics: Condensed Matter, Vol. 12, No. 11, pp. L205-210, 2000.
  
• (SCI, EI, 4 pages) C. W. Liu, Y. H. Huang, C. Y. Chen, S. Gurtler, C. C. Yang, Y. Chang, and L. P. Chen, “Infrared absorption study of laser induced oxide on Si and SiGe layers,” Materials Chemistry and Physics, Vol. 65, No. 3, pp. 350-353, 2000.
  
• (SCI, EI, 3 pages) C.-F. Lin, C. W. Liu, M.-J. Chen, M. H. Lee, and I. C. Lin, “Electroluminescence at Si Band gap Energy Based on Metal-oxide-silicon Structures,” J. Appl. Phys., Vol. 87, No. 12, pp. 8793-8795, 2000.
  
• (SCI, EI, 3 pages) C. W. Liu, M. H. Lee, M.-J. Chen, I. C. Lin, and C-F Lin, “Room-temperature electroluminescence from electron-hole plasmas in the metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 76, No. 12, pp. 1516-1518, 2000.
  
• (SCI, EI, 8 pages) C. Y. Chen, K. J. Ma, Y. S. Lin, C. W. Liu, C. Y. Chao, S. Gu, C. W. Hsu, and C. C. Yang, “Formation of Silicon Surface Gratings with High Pulse-Energy UV Laser,” J. Appl. Phys., Vol. 88, No. 11, pp. 6162-6169, 2000.

• (SCI, EI, 3 pages) C. W. Liu, Y. D. Tseng, and Y. S. Huang, “Substitutional carbon reduction in SiGeC alloys grown by rapid thermal chemical vapor deposition,” Appl. Phys. Lett., Vol. 75, No. 15, pp. 2271-2273, 1999.
  
• (SCI, EI, 5 pages) C. W. Liu, Y. D. Tseng, M. Y. Chern, C. L. Chang, and J. C. Sturm, “Thermal Stability of Si/SiGeC/Si Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition,” J. Appl. Phys., Vol. 85, No. 4, pp. 2124-2128, 1999.

• (SCI, EI, 5 pages) C. Y. Lin, C. W. Liu, and L. J. Lee, “Valence Band Properties of Relaxed Ge1-xCx Alloys,” Material Chemistry and Physics, Vol. 52, No. 1, pp. 31-35, 1998.

• (SCI, EI, 7 pages) C. W. Liu and J. C. Sturm, “Low Temperature Chemical Vapor Deposition of β-SiC on (100) Si Using Methylsilane and Device Characteristics,” J. Appl. Phys., Vol. 82, No. 9, pp. 4558-4565, 1997.
  
• (SCI, EI, 3 pages) C. Y. Lin and C. W. Liu, “Hole Effective Masses of Si1-xCx and Si1-yGey alloys,” Appl. Phys. Lett., Vol. 70, No. 11, pp. 1441-1443, 1997.
  
• (SCI, EI, 4 pages) C. W. Liu and V. Venkataraman “Growth and Electron Effective Mass Measurements of Strained Si and Si0.94Ge0.06 on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition,” Material Chemistry and Physics, Vol. 49, No. 1, pp. 29-32, 1997.
  
• (SCI, EI, 3 pages) C. Y. Chao, C. Y. Chen, C. W. Liu, Y. Chang, and C. C. Yang, “Direct Writing of Silicon Gratings with Highly Coherent ultraviolet Laser,” Appl. Phys. Lett., Vol. 71, No. 17, pp. 2442-2444, 1997.

• (SCI, EI, 5 pages, continuation of Ph. D. work) C. W. Liu, St. A. Amour, J. C. Sturm, Y. Lacroix, M. L. W Thewalt, C. W. Magee, and D. Eaglesham, “Growth and Photoluminescence of High Quality SiGeC Alloy Layers on Si (100) Substrates,” J. Appl. Phys., Vol. 80, No. 5, pp. 3043-3047, 1996.
  
• (SCI, EI, 4 pages, continuation of Ph. D. work) L. D. Lanzerotti, A. St. Amour, C. W. Liu, J. C. Sturm, J. K. Watanabe, and N. D. Theodore, “Si/Si1-x-yGexCy/Si Heterojunction Bipolar Transistors,” IEEE Electron Device Letters, Vol. 17, No. 7, pp. 334-337, 1996.
  
• (SCI, EI, 4 pages, continuation of Ph. D. work) St. A. Amour, C. W. Liu, J. C. Sturm, Y. Lacroix, and M. L. W Thewalt, “Defect-Free Band-Edge Photoluminescence and Bandgap Measurement of Pseudomorphic SiGeC Alloy Layers on Si (100),” Appl. Phys. Lett., Vol. 67, No. 26, pp. 3915-3917, 1995; also in Appl. Phys. Lett., Vol. 68, No. 8, pp. 1169, 1996.

The epitaxial growth of thin film Ge-on-Si substrate is the key material structure for future electronic and photonic integrations. For electronic devices, the high carrier mobility in thin film Ge channel layers can improve the FET performance. For optical devices, thin film Ge is a great photonic material because of its high light efficiency, high optical absorption and pseudo-direct band gap.

The biaxial tensile strain in thin film Ge which is contributed by the thermal 0expansion mismatch between Ge and Si can improve the light efficiency of thin film Ge, the other advantage of Ge-on-Si. However, the lattice mismatch between Si and Ge would induce the difficulty of the growth of high quality Ge films. Amount of threading dislocation (TD) could be generated and degrade the light efficiency in thin film Ge if the interface lattice mismatch is not handled properly. Many efforts are used to decrease the TDD such as two-stage growth and thermal control.

Related Publications:

1. S. -R. Jan, C. -Y. Chen, C. -H. Lee, S. -T. Chan, K. -L. Peng and C. W. Liu, “Influence of defects and interface on radiative transition of Ge” accepted by Appl. Phys. Lett., 2011.