CIGS, HIT, and micromorph with measurement, process and simulation

Measurement: Quantum efficiency (QE), Photoluminescence (PL), Electroluminescence (EL), solar cell efficiency (including single, tandem and triple junction), dark and photo I-V measurement, carrier lifetime measurement by QSSPC, and FTPS for defect level.

 

Process: Strained Si and MOS photodetector modeling are performed in 3-D and SOI simulations.standard solar cell process including texture optimization, n+ or p+ diffusion, anti-reflection coating, dielectric layer passivation, grid design, and metallization.

 

Device Simulation and modeling: Sentaurus and ISE TCAD for 2-D and 3-D structure simulation covers electrical simulation, optical simulation, and optical to electrical conversion.The materal model for absorption coefficients and defect density profiles are essential to obtain realistic results. The material parameters will be extracted from experimental data as the input deck of our simlation.

 

Related Publications:

  1. T.-H. Cheng, P.-S. Kuo, C.-Y. Ko, and C.-Y. Chen, and C. W. Liu, “Electroluminescence from monocrystalline silicon solar cell,” J. Appl. Phys., Vol. 105, 106107,2009.
  2. C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” J. Nanosci. Nanotech., Vol. 9, No. 6, pp. 3622-3626, 2009.