News


    • Shu-Han Hsu, Hung-Chih Chang, Chun-Lin Chu, Yen-Ting Chen,Wen-Hsien Tu, Fu Ju Hou, Chih Hung Lo, Po-Jung Sung, Bo-Yuan Chen, Guo-Wei Huang, Guang-Li Luo, C. W. Liu, Chenming Hu, and Fu-Liang Yang, Triangular-channel Ge NFETs on Si with (111) Sidewall-Enhanced Ion and Nearly Defect-free Channels,” accepted International Electron Devices Meeting (IEDM), 2012.
    • Cheng-Ming Lin, Hung-Chih Chang, Yen-Ting Chen, I-Hsieh Wong, Huang-Siang Lan, Shih-Jan Luo, Jing-Yi Lin, Yi-Jen Tseng, C. W. Liu, Chenming Hu, and Fu-Liang Yang,  Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ~43, ~2×10-3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response,” accepted by  International Electron Devices Meeting (IEDM), 2012.
    • Yu-Jen Hsiao, Ting-Jen Hsueh, Jia-Min Shieh, Yu-Ming Yeh, Chien-Chih Wang, Bau-Tong Dai, Wen-Wei Hsu, Jing-Yi Lin, Chang-Hong Shen, C. W. Liu, Chenming Hu and Fu-Liang Yang,  Bifacial CIGS (11% Efficiency)/Si Solar Cells by Cd-free and Sodium-free Green Process Integrated with CIGS TFTs,”  International Electron Devices Meeting (IEDM), 2011.
    • Shu-Han Hsu, Chun-Lin Chu, Wen-Hsien Tu, Yen-Chun Fu, Po-Jung Sung, Hung-Chih Chang, Yen-Ting Chen, Li-Yaw Cho, Guang-Li Luo, William Hsu, C. W. Liu, Chenming Hu, and Fu-Liang Yang, Chenming Hu, and Fu-Liang Yang, Nearly Defect-free Ge Gate-All-Around FETs on Si Substrates,”  International Electron Devices Meeting (IEDM), 2011.
    • Deep Inside Intel
    • 應材結盟台4大學和工研院 厚植台競爭力【2012/09/21 DIGITIMES中文網】捐贈太陽能研究用系統濺鍍機台予台大及國家奈米元件實驗室的捐贈儀式 【2009/06/05 工商時報】
    • Yen Chun Fu, William Hsu, Yen-Ting Chen, Huang-Siang Lan, Cheng-Han Lee, Hung-Chih Chang, Hou-Yun Lee, Guang-Li Luo, Chao-Hsin Chien, C. W. Liu, Chenming Hu, and Fu-Liang Yang High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response,” International Electron Devices Meeting (IEDM), 2010.
    • 2010-05-05  Dr. Hsiao's talk in NTU EE

         

In Dr. Hsiao's  IBM-USA life,he worked at the mainframe group's Advanced RAS deapartment toinvent and do innovative work for enhanced RAS in Computers.The work area such as ECC,ED/FI, Testing, UPC and BC412 Barocdes, etc. All his work was later well recognized by the world society in the fault tolerant/dependable computing professors which led him to get elected to IEEE Fellow in 1974, and IBM Fellow in 1984 and EurAsian Fellow in 2001.

E-mail: mhsiao@us.ibm.com

  • G.-L. Luo, S.-C. Huang, C.-T. Chung, Dawei Heh, C.-H. Chien, C.-C. Cheng, Y.-J. Lee, W.-F. Wu, C.-C. Hsu, M.-L. Kuo, J.-Y. Yao, M.-N. Chang, C.-W. Liu, C.-M. Hu, C.-Y. Chang, and F.-L. Yang, “A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced Leakage,” accepted by International Electron Device Meeting (IEDM), 2009.  
  • T.-H. Cheng, C. T. Lee, M. H. Liao, P.-S. Kuo, T. A. Hung, and C. W. Liu, "Electrically pumped Ge Laser at room temperature," accepted by International Electron Device Meeting (IEDM), 2007.

  • M. H. Liao, C.-Y. Yu, C.-F. Huang, C.-H. Lin, C.-J. Lee, M.-H. Yu, S. T. Chang, C.-Y. Liang, C.-Y. Lee, T.-H. Guo, C.-C. Chang and C. W. Liu, "Strain-enhanced Si/Ge Heterojunction LED and GOI Detector," accepted by International Electron Device Meeting (IEDM), 2005.

  • S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C.-F. Huang, S. T. Chang and C. W. Liu, "Package-strain-enhanced device and circuit performance," accepted by International Electron Device Meeting (IEDM), 2004.

  • M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, and M.-J. Tsai, "Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs," accepted by International Electron Device Meeting (IEDM), 2003.

  • Foreign students are very welcome to join our group.
    Details: Application Procedures & Academic Affairs Division, NTU

  • Z. Pei, C. S. Liang, L. S. Lai, Y. T. Tseng, Y. M. Hsu, P. S. Chen, S. C. Lu, C. M. Liu, M.-J. Tsai and C. W. Liu, "High Efficient 850nm and 1310nm Multiple Quantum Well SiGe/Si Heterojunction Phototransistors with 1.25 Plus GHz Bandwidth," accepted by International Electron Device Meeting (IEDM), 2002.

  • B.-C. Hsu, S. T. Chang, C.-R. Shie, C.-C. Lai, P. S. Chen, and C. W. Liu, "High Efficient 820 nm MOS Ge Quantum Dot Photodetectors for Short Reach Integrated Optical Receivers," accepted by International Electron Device Meeting (IEDM), 2002.