CMOS photonic interconnect

The LED and photodetectors, and waveguides using available CMOS technology have been our focus since 1996. Now the LED efficiency, circuit integration, and speed are being improved with nanotechnolgy-enhancements such as Ge/SiC/SiGe quantumd dots, surface plasmom, high K dielectrics, nanoroughness.... Extremely small, highly efficient, and VLSI integratable devices are main purpose of this study. The high k material research is focused on these novel applications as well as gate stacks.





Related Publications:

  1. C.-H. Lin* and C. W. Liu, “Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions,” Thin Solid Films, Vol. 518, pp. S237-S240, 2010.
  2. S.-R. Jan, T.-H. Cheng, T.-A. Hung, P.-S. Kuo, M. H. Liao, Y. Deng, and C. W. Liu, “Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes,” IEEE Trans. on Electron Devices, Vol. 55, No. 12, pp. 3590-3593, 2008.
  3. W. S. Ho, C.-H. Lin, T.-H. Cheng, W. W. Hsu, Y. -Y. Chen, P. -S. Kuo, and C. W. Liu, “Narrow-Band Metal-Oxide-Semiconductor Photodetectors,” Appl. Phys. Lett., Vol. 94, 061114, 2009.
  4. T.-H. Cheng, M. H. Liao, Lingyen Yeh, T.-L. Lee, M.-S. Liang, and C. W. Liu, “Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors,” J. Appl. Phys.,103, 016103, 2008.