Device Modeling and Simulation

Device Modeling: BSIM and Mextram models are being developed to take the strain and optical effects into account for RF and high speed digital applications. Strained Si and MOS photodetector modeling are performed in 3-D and SOI simulations.


Device Simulation: Simulations on heterojunction structure of strained-Si/Ge devices are proposed. Finite element analyses of ISE-TACD and ANSYS are used to simulate Ge FET and MOS LED/GOI detector theoretically.