Advanced Material Process

New SOI, GOI, SSDOI material using smart cut, wafer bonding, and nano-mechanics are developed for future device applications. New properties of buckled material and nano-strained material are found and will be incorporated to future device design.


Related Publications:

  1. W. Hsu, C. -Y. Peng, C. -M. Lin, Y. -Y. Chen, Y. -T. Chen, W. -S. Ho, and C. W. Liu,“Flexible single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain on polyimide substrates,” IEEE Electron Device Letters, Vol. 31, No. 5, pp. 422, 2010.
  2. W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, Y.-Y. Chen, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide detectors,” Appl. Phys. Lett., Vol. 94, 261107, 2009.
  3. C.-H. Lin, Y.-T. Chiang, C.-C. Hsu, C.-H. Lee, C.-F. Huang, C.-H. Lai, T.-H. Cheng, and C. W. LiuGe-on-glass Detectors,” Appl. Phys. Lett., Vol. 91, 041105, 2007.