IGZO Thin-Film-Tansistors (TFTs)

In the past years, there has been increasing interest in amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) for Active Matrix Organic Light Emitting Display (AMOLED). The a-IGZO TFTs have higher on/off current ratio (~10^8) and higher carrier mobility (~28 cm2/ (v-s)) as compared to amorphous Si (a-Si) TFTs, and is suitable for the high performance applications. The reliability issues have become the most rising topic. However, the reliability problem of a-IGZO TFTs is even more complicated as compared to single crystalline MOSFETs and rarely investigated. The complete understanding of device degradation mechanisms is attractive and noteworthy.