Conference Paper

1995 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012

 

2012 

  • Y. –Y. Chen, Y. –H. Nien, Y. –H. Chi, and C. W. Liu, “Reabsorption Effects on Ge Photoluminescence,” submitted to 6th International SiGe Technology and Device Meeting (ISTDM), Berkeley, California, June 4-6, 2012.
  • C. -M. Lin, Y. -T. Chen, H. -C. Chang, H. -S. Lan, I. -H. Wong, S. -J. Luo, J. -Y. Lin, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “ Ge n-MOSFETs using Low Leakage 1nm EOT ZrO2 Gate Dielectrics Nearly Free of Interfacial Layer, submitted to Symposium on VLSI Technology (VLSIT), 2012.
  • Y. -T. Chen, H. -S. Lan, C. -M. Lin, H. -C. Chang, W. -H. Tu, J. -Y. Lin, I. -H. Wong, S. -J. Luo, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “ Strain Response and Doping-dependent Peak Mobility of High Performance Ge (111) n-MOSFETs,submitted to Symposium on VLSI Technology (VLSIT), 2012.
  • (invited) C. W. Liu, H.-S. Lan, and Y.-T. Chen, “Electron scattering in Ge metal-oxide-semiconductor field-effect transistors and mobility strain response,” CSTIC, Shanghai, China, Mar. 19, 2012.

2011

  • (invited) C. W. Liu, “Silicon Solar Cells with n-type Base,” BIT's 1st Annual World Congress of Nano-S&T, Dalian, China, October 23-26, 2011.
    H.-L. Chang, H.-C. Li, C. W. Liu, F. Chen, and M.-J. Tsai, “A parameterized SPICE macromodel of resistive random access memory and circuit demonstration,” IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, Sep. 8-10, 2011.
  • C. W. Liu, T. -H. Cheng, S. -R. Jan, C. -Y. Chen, and S. T. Chan, “Direct and indirect radiative recombination from Ge,” 7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, Aug 28 - Sep 1, 2011.
  • Y.-Y. Chen, Wei-Chiang Chang, S. T. Chan, and C. W. Liu, “Germanium oxide passivation for Ge absorber,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, June 19-24, 2011.
  • W. S. Ho, Y.-H. Huang, W.-W. Hsu, Y.-Y. Chen, Y.-Y. Chen, and C. W. Liu, “Ion Implanted Boron Emitter N-Silicon Solar Cells With Wet Oxide Passivation,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, June 19-24, 2011.
  • Y.-J. Yang, J. Y. Chen, H.-C. Sun, C. W. Liu, M.-H. Tseng, C.-C. Bi, and C.-H. Yeh, “Microcrystalline silicon solar cells with heterojunction structure,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, June 19-24, 2011.
  • T. -H. Cheng , J. Y. Chen , W. W. Hsu , C. W. Liu, C. Y. Hsiao, and H. R. Tseng, “Defect Related Negative Temperature Coefficiency of Short Circuit Current of Cu(In,Ga)Se2 Solar Cells,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington , June 19-24, 2011.
  • H.-C. Sun, J. Y. Chen, Y.-J. Yang, T.-M. Chao, C. W. Liu, W.-Y. Lin, C.-C. Bi, and C.-H. Yeh, “applying reverse bias to recover the light-induced degradation of amorphous silicon germanium solar cells” Photovoltaic Technical Conference - Thin Film & Advanced Solutions 2011, Aix-en-Provence, France, May. 25-27, 2011.
  • W.-W. Hsu, J. Y. Chen, T. -H. Cheng, S. C. Lu , S.-T. Chan, W. S. Ho, and C. W. Liu, “Surface Passivation of Cu(In,Ga)Se2 by Atomic Layer Deposited Al2O3,” Photovoltaic Technical Conference - Thin Film & Advanced Solutions 2011, Aix-en-Provence, France, May. 25-27, 2011.
    (invited) C. W Liu, “high mobility channels,” 2011 International Workshop on Exploratory Research for Semiconductor Devices and VLSI Packaging, Beijing, China, Mar. 16, 2011.
  • (invited) C. W. Liu, “high mobility materials for technologies and physics.” 5th International Workshop on High k dielectrics on high carrier mobility semiconductors, Hsinchu, Taiwan., 2011.
  • (invited) C. W. Liu , T. -H. Cheng , C. -Y. Chen , and S. T. Chan  “Photoluminescence and Electroluminescence from Ge ” symposium on Si-based materials and devices, Xiamen, China, May 27-29, 2011.
  • C. W. Liu , T. -H. Cheng , C. -Y. Chen , and S. T. Chan  “Enhancements of direct band gap transition from Ge ” 2011 Taiwan-USAF Nanoscience Workshop, Seattle, U.S.A, April, 5-6, 2011.
  • H.-L. Chang, H.-C. Li, C. W. Liu, F. Chen, and M.-J. Tsai, “Physical mechanism of HfO2-based bipolar resistive random access memory,” accepted by 2011 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 25-27, 2011.

2010

  • Yen Chun Fu, William Hsu, Yen-Ting Chen, Huang-Siang Lan, Cheng-Han Lee, Hung-Chih Chang, Hou-Yun Lee, Guang-Li Luo, Chao-Hsin Chien, C. W. Liu, Chenming Hu, and Fu-Liang Yang High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response,” International Electron Devices Meeting (IEDM), 2010.
  • T. M. Lu, W. Pan, D. C. Tsui, C. -H. Lee, and C. W. Liu, “In-plane magnetoresistivity of high-mobility two-dimensional electrons in an undoped Si/SiGe quantum well at 20 mK” March Meeting of the American Physical Society, Portland, Oregon, USA, March 15-19, 2010.
  • “Invited” C. W. Liu, “ High mobility for physics and technologies” the III Nanotechnology International Forum , November 1-3 2010, Moscow.
  • C. -H. Lee, W. H. Tu, C. M. Lin, H. T. Chang, S. W. Lee, and C. W. Liu, “Surface Orientation Effects on SiGe Quantum Dots and Nanorings Formation” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • S. -R. Jan, C. -H. Lee, T. -H. Cheng , Y. -Y. Chen, K. -L. Peng, S. -T. Chan, C. W. Liu, Y. Yamamoto, and B. Tillack, “Extrinsic effects of indirect radiative transition of Ge,” by 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • C. -M. Lin, Y. -T. Chen, C.-H. Lee, H.-C. Chang, W. -C. Chang, and C. W. Liu, "Enhanced Voltage Linearity of HfO2 Metal-Insulator-Metal Capacitors by H2O Prepulsing Treatment on Bottom Electrode"", 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • T. -H. Cheng , W. W. Hsu , C.Y. Huang, J.-A. Lu, J. Y. Chen, and C. W. Liu, "Photoluminescence Characterization and Passivation of CIGS Absorber", 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • T. -H. Cheng , K.-L. Peng, C. -Y. Ko , C.-Y. Chen , S. T. Chan, and C. W. Liu, "Enhancements of Direct Band Radiative Recombination from Ge", 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • H.-C. Sun, W.-D. Chen, T. H. Cheng, Y.-J. Yang and C. W. Liu, “Recovery of light induced degradation of micromorph solar cells by reverse bias,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • Invited” T. M. Lu, C. -H. Lee, D. C. Tsui, and C. W. Liu, “High mobility two-dimensional electron gas in strained Si,” 5th International SiGe Technology and Device Meeting (ISTDM), Stockholm, Sweden, May24-26, 2010.
  • C. -H. Lee, W. -H. Tu, H. T. Chang, Y. -C. Fu, S. W. Lee, and C. W. Liu, “SiGe quantum dots and nanorings on Si(111),” by 5th International SiGe Technology and Device Meeting (ISTDM), Stockholm, Sweden, May24-26, 2010.
  • W. S. Ho, Y.-Y. Chen, T.-H. Cheng, J.-Y. Chen, J.-A. Lu, P.-L. Huang, and C. W. Liu, “Thermal oxide, Al2O3 and amorphous-Si passivation layers on silicon,” accepted by 35th IEEE Photovoltaic Specialist Conference, June 20-25, 2010 at the Hawaiian Convention Center in Waikiki, Hawaii.
  • “Laser Annealing and Local Heating Effects during Raman Measurement of Hydrogenated Amorphous Silicon Films,” ECS Transactions - CSTIC 2010, Vol. 27, Silicon Technology for Electronic and Photovoltaic Applications, 2010.
  • T. M. Lu, W. Pan, D. C. Tsui, C. -H. Lee, and C. W. Liu, “In-plane magnetoresistivity of high-mobility two-dimensional electrons in an undoped Si/SiGe quantum well at 20 mK”  by March Meeting of The American Physical Society, Portland, Oregon, USA, March 15-19, 2010.

2009

  • T. -H. Cheng, K.-L. Peng, C.Y. Huang, W. D. Chen, and C. W. Liu, “Characterization of CIGS solar cell absorber”,  by 2009 International Photovoltaic Solar Energy Conference and Exhibition (IPVSEE 2009), Beijin, China
  • H.-C. Chang, P.-S. Kuo, C.-Y. Peng, Y.-T. Chen, W.-Y. Chen, and C. W. Liu, “Optimization of A Saddle-like FinFET by Device Simulation for Sub-50nm DRAM Application,”  2009 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2009.
  • Y.-T. Chen, C.-F. Huang, H.-C. Sun, T.-Y. Wu, C.-Y. Ku, C. W. Liu, Y.-C. Hsu, and J.-S. Chen, “A Design of 1T Memory Cells Using Channel Traps for Long Data Retention Time,” accepted by 2009 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2009.
  • G.-L. Luo, S.-C. Huang, C.-T. Chung, Dawei Heh, C.-H. Chien, C.-C. Cheng, Y.-J. Lee, W.-F. Wu, C.-C. Hsu, M.-L. Kuo, J.-Y. Yao, M.-N. Chang, C. W. Liu, C.-M. Hu, C.-Y. Chang, and F.-L. Yang, “A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced Leakage,” IEDM, Baltimore, 2009.
  • T.-H. Cheng, C. -Y. Ko, C.-Y. Chen, K.-L. Peng, C. W. Hsu, P.K. Chiang, and C. W. Liu, “Luminescence from monolithic GaInP/GaInAs/Ge triple-junction solar cells”, International Photovoltaic Science and Engineering Conference and Exhibition , ICC JEJU, Korea, November 9-13, 2009.
  • W.S. Ho, J.-F. Liao, Y.-Y. Chen, C.-A. Lu, W.-D. Chen, W.-F. Tsai, C.-F. Ai, and  C. W. Liu, “Passivation of solar cell by Plasma Immersion Ion Implantation”, 19th International Photovoltaic Science and Engineering Conference and Exhibition , ICC JEJU, Korea, November 9-13, 2009.
  • C.-F. Huang, H.-C. Sun, P.-S. Kuo, Y.-T. Chen, C. W. Liu, Y.-J. Hsu, and J.-S. Chen, “Dynamic Bias Temperature Instability of p-channel Polycrystalline Silicon Thin-film Transistors,”  16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009), Suzhou, China, July 6-10, 2009.
  • C.-H. Lee, Y. -Y. Shen, Y. Y. Chen, H.-T. Chang, S. W. Lee, and C. W. Liu, “SiGe Quantum Dots and Quantum Rings on Si(110) by Ultra-High Vacuum Chemical Vapor Deposition,”  6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), p. 43, Los Angeles, USA, May 17-22, 2009.
  • P. S. Chen, S. W. Lee, and C. W. Liu, “Enhanced relaxation and thermal stability in thin SiGe films with an inserted Si1-yCy layer,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P13, Los Angeles, p. 113, USA, May 17-22, 2009.
  • C.-H. Lin and C. W. Liu, “Relation between Currents and Positions of Delta-Doped Layers in SiGe QDIPs,”  6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P113, Los Angeles, USA, May 17-22, 2009.
  • T.-H. Cheng, P.-S. Kuo, C.-Y. Ko, C.-Y. Chen, and C. W. Liu, “Minority carrier lifetime measurement of monocrystalline silicon solar cell by temporal electroluminescence method,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P125, Los Angeles, USA, May 17-22, 2009.
  • C.-Y. Peng, Y.-H. Yang, C.-M. Lin, Y.-Y. Shen, M. H. Lee, and C. W. Liu, “The Process Strain Determination of Nickel Germanides by Raman Spectroscopy,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), p. 123, Los Angeles, USA, May 17-22, 2009.
  • H. T. Chang, S. W. Lee, C.-H. Lee, S. L. Cheng, and C. W. Liu, “Ge redistribution of self-assembled Ge islands on Si (001) during annealing,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P63, Los Angeles, USA, May 17-22, 2009.
  • Y.-Y. Chen, W.-S. Ho, C.-H. Lee, Y.-H. Yang, W.-D. Chen, C. W. Liu, “The Ge1-xSnx MOS Infrared Photodetector,”  6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), p. 114, Los Angeles, USA, May 17-22, 2009.
  • H.-L. Chang, H.-C. Chang, S.-C. Yang, H.-C. Tsai, H.-C. Li, and C. W. Liu, “Improved SPICE Macromodel of Phase Change Random Access Memory,”  2009 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), Hsinchu, Taiwan, April 27-30, 2009.

2008

  • H.-C. Sun, C.-F. Huang, Y.-T. Chen, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “A New NBTI Characterization Method on Polycrystalline Silicon Thin-Film Transistors,” accepted by 15th International Display Workshop (IDW), Proceeding Vol. 2, pp. 659-662, Niigata, Japan, Dec. 3-5, 2008.
  • C.-F. Huang, Y.-T. Chen, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Bias Temperature Instability on Polycrystalline Silicon Thin-Film Transistors,”  2008 International Electron Devices and Materials Symposia (IEDMS), Taichung, Taiwan, Nov. 28-29, 2008.
  • C.-H. Lee, C. M. Lin, Y. -Y. Sen, S. W. Lee P. Shushpannikov, R. V. Goldstein, and C. W. Liu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition,” 2008 International Electron Devices and Materials Symposia (IEDMS), Taichung, Taiwan, Nov. 28-29, 2008.
  • W. S. Ho, C.-H. Lin, P.-S. Kuo, W. W. Hsu, T.-H. Cheng, Y.-Y Chen and C. W. Liu “Metal Oxide Semiconductor UV Sensor,” 7th IEEE Conference on Sensors, Lecce, Italy, Oct 26-29, 2008.
  • “Invited” C.-F. Huang, Y.-T. Chen, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, K.-C. Lin, and J.-S. Chen, “Comprehensive Study of Bias Temperature Instability on Polycrystalline Silicon Thin-Film Transistors,” 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, Oct. 20-23, 2008.
  • C.-Y. Peng, Y.-H. Yang, C.-M. Lin,Y.-J. Yang, C.-F. Huang, and C. W. Liu, “Process Strain Induced by Nickel Germanide on (100) Ge Substrate,” 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, Oct. 20-23, 2008.
  • S. W. Lee, H. T. Chang, C. -H. Lee, C. A. Chueh, S. -L. Cheng, W. -W. Wu, C. W. Liu, “Vertical Self-Alignment of SiGe Nanolenses on Si (001),” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008
  • C.-H. Lee, C. M. Lin, S. W. Lee, P. Shushpannikov, R. V. Goldstein and C. W. Liu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008
  • C.-Y. Peng, C.-F. Huang, Y.-J. Yang, S. Chakraborty, Y.-H. Yang, C.-W. Lai, C. M. Lin and C. W. Liu, “Micro-Raman Studies on Nickel Germanides formed on (110) crystalline Ge,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008
  • C.-F. Huang, Y.-J. Yang, C.-Y. Peng, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Polarity Change of Threshold Voltage Shifts for n-channel Polycrystalline Silicon Thin-Film Transistors Stressed by Negative Gate Bias,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008.
  • S. W. Lee, C.-H. Lee, H. T. Chang, S. L. Cheng, and C. W. Liu, “Evolution of composition distribution of Si-capped Ge islands on Si (001),” 4th International Conference on Technological Advances of Thin Films & Surface Coatings (Thin Films 2008), Singapore, July 13-16, 2008.
  • W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide Photodetector,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008. (Best Student Paper Award)
  • S.-W. Lee, H. T. Chang, C.A. Chueh, S. L. Cheng, C.-H. Lee, and C. W. Liu, “The Compositional Distribution of Ge Islands Grown by Ultra-High Vacuum Chemical Vapor Deposition,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008.
  • H.-L. Chang, P.-S. Kuo, W.-C. Hua, C.-P. Lin, C.-Y. Lin, C. W. Liu, “Crosstalk Reduction Technique Between Dual SiGe Power Amplifiers,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008.
  • C.-Y. Peng, C.-F. Huang, Y.-J. Yang, S. Chakraborty, and C. W. Liu, “Nickel Germanide Formation: Orientation and Temperature Effects,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008.

2007

  • T.-H. Cheng, C. T. Lee, M. H. Liao, P. -S. Kuo, T. A. Hung, and C. W. Liu, “Electrically pumped Ge Laser at room temperature,” International Electron Devices Meeting (IEDM), Washington D.C., Dec. 2007.
  • C.-F. Huang, Y.-J. Yang, C.-Y. Peng, H.-C. Sun, C. W. Liu, C.-W. Chao, and K.-C. Lin, “Comprehensive Study on Dynamic Bias Temperature Instability of p-channel Polycrystalline Silicon Thin-film Transistors,” accepted by 2007 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2007.
  • Y.-J. Yang, M. H. Liao, C. W. Liu, Lingyen Yeh, T.-L. Lee, M.-S. Liang, “Superior n-MOSFET Performance by Optimal Stress Design,” 2007 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2007.
  • P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, C. W. Liu, “Si/SiGe/Si Quantum well Schottky barrier diodes,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
  • S. W. Lee, P.-S. Chen, M.-H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C2H4 and SiCH6 mediation by ultra-high vacuum chemical vapor deposition,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
  • P.-S. Chen, S. W. Lee, M.-H. Lee,  and C. W. Liu, “Formation of Relaxed SiGe on the buffer consisting of modified SiGe islands by Si Pre-mixing,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
  • C.-H. Lee, C.-Y. Yu, C. M. Lin, H. Lin, W.-H. Chang, and C. W. Liu, “Carrier Gas Effects on SiGe Growth by Ultra-high Vacuum Chemical Vapor Deposition,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
  • W.-S. Liao, S.-Y. Huang, T. Shih, and C. W. Liu, “Current and Speed Enhancements at 90nm Node through Package Strain,” International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sept. 2007.
  • T.-H. Cheng, C.-H. Lee, M. H. Liao, and C. W. Liu, “Electroluminescence from strained SiGe quantum dot light-emitting diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007.
  • S.-R. Jan, M. H. Liao, T.-H. Cheng, Y. Deng and C. W. Liu, “Blue Electroluminescence from Metal/Oxide/n-6H-SiC Tunneling Diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007.
  • P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu, “Novel Transport mechanism of SiGe dot MOS tunneling diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007.
  • C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” International Conference on Surfaces, Coatings and Nanostructured Materials (NanoSMat 2007), Algarve, Portugal, July 9-11, 2007.
  • C.-H. Lin, C.-H. Lee, Y.-T. Chiang, C.-C. Hsu, Y. Deng, Y.-H. Dai, and C. W. Liu, “Ge-on-Polyimide Photodetector,” International Symposium for Flexible Electronics and Display (ISFED), Hsinchu, Taiwan, 17-18 Dec. 2007.
  • C.-Y. Peng, M. H. Liao, C.-F. Huang, Y. J. Yang, S. T. Chang, and C. W. Liu, “Strain effects on MOS  capacitors and Schottky diodes,” 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May, 2007. 
  • Y.-J. Yang, S. T. Chang, and C. W. Liu, “Electron Mobility Enhancement in STRAINED-Germanium NMOSFETs and Impact of Strain Engineering in Ballistic Regime,” International Symposium VLSI Technology, System, and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2007.

2006

  • H.-L. Chang, P.-T. Lin, W.-C. Hua, C.-P. Lin, C.-Y. Lin, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “Differential Power Combining Technique for General Power Amplifiers Using Lumped Component Network,” Asia-Pacific Microwave Conference (APMC), Yokohama, Japan, Dec. 2006.
  • “Invited” C.-H. Lin and C. W. Liu, “MOS Si/Ge photodetectors,” Optoelectronic Devices: Physics, Fabrication, and Application III, SPIE Symposium, Boston, Oct. 1-4, 2006.
  • “Invited” C. W. Liu, and F. Yuan, “Mobility enhancement technologies,” 8th International Conference on Solid-state and Integrated Circuit Technology (ICSICT-06), Shanghai, China, Oct. 2006.
  • “Invited” M. H. Liao, C.-H. Lin, C.-H. Lee, T.-H. Cheng, T.-H. Guo, and C. W. Liu, “Electroluminescence from SiGe based metal-oxide-semiconductor Tunneling Diodes,” 210th Meeting of Electrochemical Society, Mexico, Oct. 29-Nov. 3, 2006.
  • C.-H. Lin, C.-Y. Yu, M. H. Liao, C.-F. Huang, C.-J. Lee, C.-Y. Lee, and C. W. Liu, “The Process and Optoelectronic Characterization of Ge-on-Insulator,” 210th Meeting of Electrochemical Society, Mexico, Oct. 29-Nov. 3, 2006.
  • M. H. Liao, S. T. Chang, P. S. Kuo, H.-T. Wu, C.-Y. Peng, and C. W. Liu, “Strained Pt Schottky diodes on n-type Si and Ge,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 22. 2006.
  • Y. M. Lin, S. L, Wu, S. J. Chang, P. S. Chen, and C. W. Liu, “Impact of SiN on performance in Novel CMOS Architecture using substrate strained-SiGe and mechanical strained Si technology,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 64. 2006.
  • M .H. Lee, S. T. Chang, S. Maikap, C.-Y. Yu, and C. W. Liu, “The interface properties of SiO2/strained Si with carbon incorporation surface channel MOSFETs,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 88. 2006.
  • M. H. Liao, T.-H. Cheng, T. C. Chen, C.-H. Lai, C.-H, Lee, and C. W. Liu, “Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 222. 2006.
  • W.-C. Hua, P.-T. Lin, C.-P. Lin, C.-Y. Lin, H.-L. Chang, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “Coupling Effects of Dual SiGe Power Amplifiers for 802.11n MIMO Applications,” 2006 IEEE Radio Frequency Integrated Circuits (RFIC) Conference Symp. Dig., San Francisco, USA, pp. 81-84, 2006.

2005

  • C.-Y. Peng, F. Yuan, M. H. Lee, C.-Y. Yu, S. Maikap, M. H. Liao, S. T. Chang, and C. W. Liu, “Novel Schottky Barrier Ge/Si Heterojunction PMOS,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., 2005.
  • I.-J. Yang, C.-Y. Peng, S. T. Chang, and C. W. Liu, “Calculation of the Electron Mobility in Silicon Inversion Layers: Dependence on Surface Orientation, Channel Direction, and Stress,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., 2005.
  • M. H. Liao, C.-Y. Yu, C.-F. Huang, C.-H. Lin, C.-J. Lee, M.-H. Yu, S. T. Chang, C.-Y. Liang, C.-Y. Lee, T.-H. Guo, C.-C. Chang, and C. W. Liu, “2m emission from Si/Ge heterojunction LED and up to 1.55 m detection by GOI detector with strain-enhanced features,” 51st International Electron Devices Meeting (IEDM), Washington D.C., 2005.
  • “Invited” P. S. Chen, M. H. Lee, S. W. Lee, C. W. Liu, and M. -J. Tsai, “Strained CMOS technology with Ge,” 207th Meeting of Electrochemical Society, Quebec City, Canada, May 15-20, 2005.
  • C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, and C. W. Liu, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” p.322, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  • S. W. Lee, P. S. Chen, K. F. Liao, M.-J. Tsai, C. W. Liu, and L. J. Chen, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” p.116, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  • Y. H. Peng, P. S. Chen, M.-J. Tsai, K. T. Chen, C. W. Liu, C. H. Kuan, and S. C. Lee, “The study of Electro-Luminescence from Ge/Si quantum dots and Si/SiGe supperlattices,” p.226, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  • S. W. Lee, Y. L. Chueh, P. S. Chen, H. C. Chen, C. W. Liu, and L. J. Chen, “Field emission properties of self-assembled Ge quantum dots grown by ultrahigh vacuum chemical vapor deposition,” pp.296, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  • P.-S. Kuo, C.-H. Lin, P. S. Chen, and C. W. Liu, “The current transport mechanism of MOS Photodetector with Pt Gate,” p.220, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  • W.-C. Hua, H.-H. Lai, P.-T. Lin, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “High-Linearity and Temperature-Insensitive 2.4 GHz SiGe Power Amplifier with Dynamic-Bias Control,” 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Conference Symp Dig., long beach, CA, USA,. June, pp. 609-612, 2005

2004

  • S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C.-F. Huang, S. T. Chang, and C. W. Liu, “Package-strain-enhanced device and circuit performance,” 50th International Electron Devices Meeting (IEDM), pp. 233-236, San Francisco, Dec. 13-15, 2004. (Cited No./Self Cited No.= 8 / 5)
  • C.-Y. Yu, P.-W. Chen, M.-H. Liao, and C. W. Liu, “Buckled SiGe layers on viscous SGOI substrates by wafer bonding and layer transfer techniques,” 15th International Conference on Ion Implantation Technology (IIT), 2004.
  • P. S. Chen, S. W. Lee, C.W. Liu, and M.-J. Tsai, “Thin relaxed SiGe layer for strained Si CMOS,” Semiconductor Manufacturing Technology Workshop Proceedings, pp.79-82,2004.
  • P. S. Chen, K. F. Liao, M. H. Lin, S. W. Lee, C.W. Liu, and M.-J. Tsai, “Influence of H and He implantation on surface morphology and relaxation in SiGe/Si (100),” 15th International Conference on Ion Implantation Technology (IIT), 2004.
  • P. S. Chen, S. W. Li, W. Y. Hiseh, M.-J. Tsai, and C. W. Liu, “UHV/CVD of Si1-x-yGexCy/Si and Si1-yCy/Si heterostructure,” International Conference in Asia IUMRS-ICA, Hsinchu, Taiwan, Nov. 16-18, 2004.
  • P. S. Chen, M.-J. Tsai, C. W. Liu, and S. W. Lee, “Carbon mediation on the growth of self-assembled Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition,” 51st International Symposium of American Vacuum Society, Anaheim, CA, 2004.
  • S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, and C. W. Liu, “The growth of high-quality SiGe films by introducing an intermediate Si:C layer,” 51st International Symposium of American Vacuum Society, Anaheim, CA, 2004.
  • S. W. Lee, P. S. Chen, M. H. Lee, C. W. Liu and L. J. Chen, “The growth of high-quality SiGe films with an Intermediate Si layer for strained Si nMOSFETs,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
  • P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M.-J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial SiGe:C and SiC thin films on Si(001) with ethylene (C2H4) precursor as carbon source,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
  • “Invited” C. W. Liu, F. Yuan, Z. Pei, and J.-W. Shi, “Si/SiGe heterojunction phototransistor: physics and modeling,” Second International Symposium on Integrated Optoelectronics, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  • P. S. Chen, Z. Pei, S. W. Lee, C. W. Liu, and M.-J. Tsai, “Nanostructure and optical properties of self-assembled Ge quantum dots grown in a hot wall UHV/CVD system,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  • “Invited” C. W. Liu, S. Maikap, M.-H. Liao and F. Yuan., “BiCMOS devices under mechanical strain,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  • S. T. Chang, M. H. Lee, and C. W. Liu, “Strained Si1-xCx on Field Transistor on SiGe Substrate,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  • “Invited” C. W. Liu and B.-C. Hsu, “CMOS optoelectronics,” Advance Short-time Thermal Processing for Si-Based CMOS Devices II, 205th Meeting of Electrochemical Society, San Antonio, Texas, May 9-14, 2004.
  • “Invited” M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y.-C. Lee, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W.-Y. Hsieh, and M.-J. Tsai, “The Noise Characteristics in Strained-Si MOSFETs,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
  • C.-Y. Yu, T. C. Chen, S.-H. Huang, L. S. Lee, and C. W. Liu, “Electrical and Optical Reliability Improvement of HfO2 Gate Dielectric by Deuterium and Hydrogen Incorporation,” pp.165-168, 11th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2004.
  • T. C. Chen, L. S. Lee, W. Z. Lai, and C. W. Liu, “The Characteristic of HfO2 on Strained SiGe,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
  • P.J. Tzeng, S. Maikap, W. Z. Lai, C. S. Liang, P.S. Chen, L.S. Lee, C. W. Liu, “Post deposition annealing effects on the reliability of ALD HfO2 on strained SiGe layers,” pp.29-32, 11th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2004.
  • C.-H. Lin, P.-S. Kuo, P. S. Chen, C.-Y. Yu, S. T. Chang, C. W. Liu, “Raising Operation Temperature of MOS Ge/Si Quantum Dot Infrared Photodetectors,” International Electron Devices and Materials Symposia (IEDMS), pp. 277-280, Hsinchu, Taiwan, 2004.
  • P.-S. Kuo, C.-H. Lin, B.-C. Hsu, P.S. Chen, C.W. Liu “A Dual-bias Operated MOS Photodetector with Pt Gate,” International Electron Devices and Materials Symposia (IEDMS), pp. 411-414, Hsinchu, Taiwan, 2004.

2003

  • F. Yuan, Z. Pei, J.-W. Shi, S. T. Chang, and C. W. Liu, “Mextram Modeling of Si/SiGe Heterojunction Phototransistors,” International Semiconductor Device Research Symposium (ISDRS), pp. 92-93, Washington D.C., 2003.
  • B.-C. Hsu, S. T. Chang, P.-S. Kuo, P. S. Chen, C. W. Liu, J.-H. Lu, and C. H. Kuan, “MOS Ge/Si Quantum Dot Infrared Photodetectors with Quantum Dot and Wetting Layer Responses,” International Semiconductor Device Research Symposium (ISDRS), pp. 491-492, Washington D.C., 2003.
  • , J.-W. Shi, Y.-M. Hsu, F. Yuan, C.-S. Liang, Z. Pei, Y.M. Hsu, T.-M. Pan, Y. H. Liu, C. W. Liu, S.C. Lu, W. Y. Hsieh, and M.-J. Tsai, “Analysis on the temperature dependent characteristics of SiGe HBTs,”International Semiconductor Device Research Symposium (ISDRS), pp. 178-179, Washington D.C., 2003.
  • Z. Pei, J.-W. Shi, Y.-M. Hsu, F. Yuan, C.-S. Liang, C. W. Liu, T.-M. Pan, S. C. Lu and M.-J. Tsai, “Integratable SiGe Phototransistor with High Speed (BW=3GHz) and Extremely-High Avalanche Responsivity,”International Semiconductor Device Research Symposium (ISDRS), pp. 18-19, Washington D.C., 2003.
  • C.-Y. Liang, B.-C. Hsu, C.-H. Lin, S. T. Chang, and C. W. Liu, “Modeling and Simulation of High-bandwidth Si-based MOS/SOI Photodetectors,” International Semiconductor Device Research Symposium (ISDRS), pp. 230-231, Washington D.C., 2003.
  • S. T. Chang, Y. H. Liu, and C. W. Liu, “Buried Oxide Thickness Effect and Lateral Scaling og SiGe HBT on SOI Substrate,” International Semiconductor Device Research Symposium (ISDRS), pp. 16-17, Washington D.C., 2003.
  • M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, and M.-J. Tsai, “Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs,” 49th International Electron Devices Meeting (IEDM), Technical Digest, pp. 69-72, Washington D.C., Dec. 8-10, 2003. (Cited No./Self Cited No.= 14 / 7)
  • S. W. Lee, P. S. Chen, L. J. Chen, and C. W. Liu, “The growth of high-quality uniform SiGe films by introducing an intermediate Si layer,” International Conference on Metallurgical Coatings and Thin Films (ICMCTF), pp. 78, San Diego, California, 2003.
  • S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C.T. Chia, “Relief of strain in SiGe films with a buffer layer containing Ge quantum dots,” 8th IUMRS International Conference on Advanced Materials (IUMRS-ICAM), Yokohama, Japan, Oct. 8-13, 2003.
  • “Invited” J.-W. Shi, Z. Pei, Y.-M. Hsu, F. Yuan, C.-S. Liang, Y.-T. Tseng, P.-S. Chen, C. W. Liu, S.-C. Lu, M.-J, Tsai, “Si/SiGe Heterojunction Phototransistor,”International Topical Meeting on Microwave Photonics, Budapest, Hungary, Sep., 2003.
  • L. S. Lai, C. S. Liang, P. S. Chen, Y. M. Hsu, Y. H. Liu, Y. T. Tseng, S. C. Lu, M.-J. Tsai, and C. W. Liu, “Optimal SiGe:C HBT Module for BiCMOS Applications,” International Symposium VLSI Technology, System, and Applications, Oct. 6-8, 2003.
  • P. S. Chen, S. W. Lee, Y. H. Peng, Z. Pei, M.-J. Tsai, and C. W. Liu, “Novel composite Ge/Si/Ge quantum dots with high PL efficiency and improved uniformity,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.
  • H. C. Chen, S. W. Lee, S. L. Cheng, L. J. Chen, P. S. Chen and C. W. Liu, “Enhanced growth of amorphous interlayer in Ti thin films on strained Si/SiGe relaxed substrates,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.
  • Y. H. Peng, J.-H. Lu, C. H. Kuan, C. W. Liu, P. S. Chen, M.-J. Tsai, S. W. Lee, L. J. Chen, M. H. Ya, Y. F. Chen, “Schottky Quantum Dots Infrared Photodetector with Far Infrared Response,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.
  • L. S. Lai, Y. H. Liu, C. S. Liang, Y. T. Tseng, Y. M. Shiu, P. S. Chen, S. C. Lu, C. W. Liu and M.-J. Tsai, “The optimal base design for SiGe heterojunction bipolar transistors with high fT,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.
  • W.-C. Hua, T.-Y. Yang, C. W. Liu, “The Comparison of Isolation Technologies and Device Models on SiGe Bipolar Low Noise Amplifier,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.
  • S. W. Lee, P. S. Chen, Y. H. Peng, C. W. Liu and L. J. Chen, “Improved quality of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments,” 1st International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, Jan. 15-17, 2003.

2002

  • B.-C. Hsu, S. T. Chang, C.-R. Shie, C.-C. Lai, P. S. Chen, and C. W. Liu, “High Efficient 820 nm MOS Ge Quantum Dot Photodetectors for Short Reach Integrated Optical Receivers,” 48th International Electron Devices Meeting (IEDM), Technical Digest, pp. 91-94, San Francisco, Dec. 8-11, 2002.
  • Z. Pei, C. S. Liang, L. S. Lai, Y. T. Tseng, Y. M. Hsu, P. S. Chen, S. C. Lu, C. M. Liu, M.-J. Tsai and C.W. Liu, “High Efficient 850nm and 1310nm Multiple Quantum Well SiGe/Si Heterojunction Phototransistors with 1.25 Plus GHz Bandwidth,” 48th International Electron Devices Meeting (IEDM), Technical Digest, pp. 297-300, San Francisco, Dec. 8-11, 2002.
  • F. Yuan, C.-H. Lin, C. -R. Shie, K.-F. Chen, M. H. Lee, and C. W. Liu, “Oxide Roughness Enhanced Reliability of MOS Tunneling Diodes,” International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, Sep. 17-19, 2002.
  • B.-C. Hsu, W.-C. Hua, C.-R. Shie, C.-C. Lai, K.-F. Chen and C. W. Liu, “A Novel Ge MOS Detector for 1.3m and 1.5m Light Wave Communication,” 201st Meeting of Electrochemical Society, pp. 662, Philadelphia, May, 2002.
  • W.-C. Hua, M. H. Lee, and C. W. Liu, “A Novel Gas Switching Method to Improve the Reliability of Rapid Thermal Oxide,” 201st Meeting of Electrochemical Society, Philadelphia, May, 2002.
  • P. S. Chen, Y. D. Tseng, and C. W. Liu, “High Throughput UHV/CVD SiGe Process for SiGe HBT and Strained Si FET,” pp. 145-148, Semiconductor Manufacturing Technology Workshop, Taiwan, 2002.
  • C. S. Liang, Y. M. Hsu, S. T. Chang, Y.-T. Tseng, L. S. Lai, and C. W. Liu, “Analysis of Collector Thickness Effect on the Cutoff Frequency of SiGe HBTs,” International Electron Devices and Materials Symposia (IEDMS), pp. 401-404, Taipei, Taiwan, 2002.
  • C. C. Lee, K. F. Chen, C. Y. Wei, S. T. Chang, and C. W. Liu, “The effects of mobility and saturation velocity on deep submicron strained Si MOSFETs,” International Electron Devices and Materials Symposia (IEDMS), pp. 421-424, Taipei, Taiwan, 2002.
  • S. T. Chang, C. Y. Lin, B.-C. Hsu, and C. W. Liu, “A Comprehensive and Experimentally Verified Electron Transport Model for Strained Silicon-Carbon Alloy,” International Electron Devices and Materials Symposia (IEDMS), pp. 274-277, Taipei, Taiwan, 2002.

2001

  • S. T. Chang, and C. W. Liu, “Effects of Recombination Lifetime and Velocity Saturation on Ge Profile Design for Base Transit Time of Si/SiGe HBTs,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 5-7, 2001; ISDRS Proceedings, pp. 490-493, 2001.
  • C.-H. Lin, M. H. Lee, B.-C. Hsu, K.-F. Chen, C.-R. Shie, and C. W. Liu, “Oxide Roughness Enhanced Reliability of MOS Tunneling Diodes,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 5-7, 2001; ISDRS Proceedings, pp. 46-49, 2001. (1st place winner of Best Student Paper Award)
  • B.-C. Hsu, W. T. Liu, C.-H. Lin and C. W. Liu, “Novel Photodetectors Using Metal-Oxide-Silicon Tunneling Structures,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., Dec. 5-7, 2001; ISDRS Proceedings, pp. 42-45, 2001.
  • S. T. Chang, C. W. Liu, and C.-H. Lin, “Optimum Ge Profile Design for Base Transit Time Minimization of SiGe HBT,” Asia-Pacific Microwave Conference (APMC), Dec. 3-6, 2001, Taipei, Taiwan; APMC Proceedings, Vol. 1 of 3, pp. 244-247, 2001.
  • C.-H. Lin, M. H. Lee, B.-C. Hsu, and C. W. Liu, “Novel Methods to Incorporate Deuterium in the MOS Structures and Isotope Effects on Soft Breakdown and Interface States,” International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, Sep. 26-28, 2001; SSDM Proceedings, pp. 422-423, 2001.
  • C. W. Liu, Y.-H. Liu, M. H. Lee, M.-J. Chen, and C.-F. Lin, “Metal-Oxide-Silicon Light Emitting Diodes Prepared by Rapid Thermal Oxidation,” Rapid Thermal and Other Short-time Processing Technology II, 199th Meeting of Electrochemical Society, Washington D.C., Mar. 25-29, 2001.
  • C.-F. Lin, M.-J. Chen, M. H. Lee, and C. W. Liu, “Electroluminescence at Si Bandgap from Metal-Oxide-Semiconductor tunneling diodes,” Photonic West, International Society for Optical Engineering (SPIE), San Jose, CA, Jan. 21-26, 2001.

2000

  • B.-C. Hsu, W. T. Liu, C.-H. Lin, and C. W. Liu, “The Inversion Current of MOS Tunneling Diodes,” International Electron Devices and Materials Symposia (IEDMS), pp. 94-96, Chung-Li, Taiwan, Dec., 2000.
  • M. H. Lee and C. W. Liu, “A Spike Ramp Design in a Rapid Thermal Processor,” International Electron Devices and Materials Symposia (IEDMS), pp. 117-120, Chung-Li, Taiwan, Dec., 2000.
  • S. T. Chang, C. W. Liu, I. C. Lin, M.-J. Chen, and C.-F. Lin, “Comprehensive Study of Electroluminescence From the Metal Oxide Silicon Tunneling Diodes on (110) Substrates,” International Electron Devices and Materials Symposia (IEDMS), Chung-Li, Taiwan, Dec., 2000.
  • C.-F. Lin, M.-J. Chen, E. Z. Liang, W. T. Liu, M. H. Lee, and C. W. Liu, , “Novel Electroluminescence from Metal-Insulator-Oxide Structures on Si,” Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), pp. 403-406, Melbourne, Australia, Dec. 6-8, 2000.
  • M.-J. Chen, C.-F. Lin, J. J. Chiu, C. W. Liu, and S.-W. Chang, “Metal-Oxide-Semiconductor Light-Emitting Diodes at Si Bandgap Energy,” IEEE Conference on Lasers and Electro-Optics Europe (CLEO/Europe), Nice, France, Sep. 10-15, 2000.
  • M. H. Lee and C. W. Liu, “Novel High Ramp-down Rate and Reflector Design in Rapid Thermal Process,” Rapid Thermal and Other Short-time Processing Technology, 197th Meeting of Electrochemical Society, Toronto, Canada, Mar. 14-18, 2000; ECS proceedings, Vol. 2000-9, pp. 437-444, 2000.

1999

  • C. W. Liu, M. H. Lee, C.-F. Lin, I. C. Lin, W. T. Liu, and H. H. Lin.” Light Emission and Detection by Metal Oxide Silicon Tunneling Diodes,” 45th International Electron Devices Meeting (IEDM), Technical Digest, pp. 749-752, Washington D.C., Dec. 5-8, 1999.
  • C.-F. Lin, C. W. Liu, M.-J. Chen, M. H. Lee, and I. C. Lin, “Tunneling Induced Electroluminescence from Metal Oxide Semiconductor Structure on Silicon,” Photonic West, International Society for Optical Engineering (SPIE), San Jose, CA, Jan. 23-28, 2000; Proceedings of SPIE, Vol. 3953.
  • S. Guo, A. Chen, C. W. Liu, A. Lin, and M. Lan, “Modeling and Optimization of Wafer-level Spatial Uniformity with the Use of Rational Subgrouping,” International Symposium on Semiconductor Manufacturing (ISSM), Santa Clara, CA, Oct. 11-13, 1999.
  • M. H. Lee, Y. D. Tseng, C. W. Liu and J. C. Sturm, “Strain Relaxation of Si/Si1-x-yGexCy/Si Quantum Wells Grown by RTCVD,” Advanced Rapid Thermal Processing, 195th Meeting of The Electrochemical Society, Seattle, May 2-6, 1999; ECS proceedings, Vol. 99-10, pp. 299-306, 1999.
  • C. W. Liu, M. H. Lee, I. C. Lin, W. T. Liu, and W. S. Kuo, “Metal Oxide Silicon Tunneling Photodetector,” Material Research Society Fall Meeting, Boston, 1999. (supported by NSC)
  • L. C. Chen, C. Y. Wen, C. T. Wu, J.-J. Wu, K. H. Chen, W. T. Liu, and C. W. Liu, Structural and Electrical Characteristics of SiCN, Material Research Society Fall Meeting, Boston, 1999; MRSProceedings, Vol. 592, pp. 219-225, 2000.
  • C. Y. Lin and C. W. Liu, “Valence Band Properties of Relaxed Ternary Group IV Semiconductor Alloys,” 12th International Conference on Ternary and Multinary Compounds, Hsinchu, Taiwan, Oct., 1999
  • C. W. Liu, M. H. Lee, C. Y. Chao, C. Y. Chen, C. C. Yang, and Y. Chang, “RTP Temperature Measurements Using Si Grating Prepared by Laser Ablation for Large Diameter Wafer,” Rapid Thermal and Integrated Processing VII, Material Research Society, 1998; MRS Proceedings Vol. 525, pp. 121-126, 1998. (Supported by NSC 87-2218-E-002-005)

1998

  • M. H. Lee and C. W. Liu, “The Temperature Uniformity and Measurements of Rapid Thermal Process for Large Diameter Wafer Applications” International Electron Devices and Materials Symposia (IEDMS), pp. 118-124, Tainan, Taiwan, Dec., 1998.
  • Y. D. Tseng, Y. S. Huan, C. W. Liu, and M. Y. Chern, “Thermal Stability of Si/SiGe/Si Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition,” International Electron Devices and Materials Symposia (IEDMS), pp. 98-101, Tainan, Taiwan, Dec., 1998.
  • Y. L. Chen and C. W. Liu, “Device Modeling and Parameter Extraction of High Speed SiGe/Si HBTs for RF chip design,” International Conference on Computer Systems Technology for Industrial Applications, pp. 241-248, 1998.

1997

  • C. W. Liu, and J. C. Sturm, “The growth of -SiC on Si and poly-Si on-SiC by rapid thermal chemical vapor deposition,” Rapid Thermal and Integrated Processing VI, Material Research Society, 1998; MRS Proceedings Vol. 470, pp. 127-132, 1997. (Partially supported by NSC 86-2215-E-002-041)
  • C. W. Liu and C. Y. Lin, “Hole Effective Masses in Relaxed SiC, GeC, and SiGe Alloys,” 7th International Symposium on Si Molecular Beam Epitaxy, Banff, Alberta, Canada, 1997 (supported by NSC 86-2215-E-002-041)
  • C. Y. Lin and C. W. Liu, “Applications of Tight-Binding and k×p method to the Valence Band Properties of Relaxed Group IV Alloys,” Material Research Society Fall Meeting, 1997.

1996

  • M. N. V. Raghavan, V. Venkataraman, J. C. Sturm and C. W. Liu, “Hydrogen Passivation of Si/SiGe Heterostructure,” Material Research Society Spring Meeting, 1996.
  • C. W. Liu, and V. Venkataraman, “Electron Cyclotron Resonance in Strained Si and SiGe Channels on Relaxed SiGe Buffers by RTCVD,” Rapid Thermal and Integrated Processing V, Material Research Society, 1996; MRS Proceedings Vol. 429, pp. 373-378, 1996. (Partially supported by NSC 85-2215-E-005-002)
  • C. W. Liu, and V. Venkataraman, “Electron Effective Mass Measurements of Tensile Strained Si and Si0.94Ge0.06 Grown By Rapid Thermal Chemical Vapor Deposition,” International Electron Devices and Materials Symposia (IEDMS), pp. 56-56, Hsinchu, Taiwan, Dec., 1996. (Partially supported by NSC 85-2215-E-005-002)
  • C. Y. Lin and C. W. Liu, “Hole Effective Mass Calculations of SiC and SiGe alloys,” International Electron Devices and Materials Symposia (IEDMS), Hsinchu, Taiwan, Dec., 1996. (NSC 85-2215-E-005-002)
  • S. Madhavi, V. Venkataraman, C. W. Liu, and J. C. Sturm, “High Drift Velocity of 2DEG in Si/SiGe Heterostructures as Determined by Magnetoresistance Techniques,” Device Research Conference, Santa Barbara CA, 1996.
  • J. C. Sturm, St. A. Amour, and C. W. Liu, “Rapid Thermal Chemical Vapor Deposition of Silicon-Based Heterostructures,” Transient Thermal Processing Techniques in Electronic Materials, 1996.

1995

  • C. W. Liu, A. St. Amour, J. C. Sturm, Y. Lacroix, and M. L. W Thewalt, “Defect-Free Band-Edge Photoluminescence in SiGeC Strained Layers Grown by Rapid Thermal Chemical Vapor Deposition,” Material Research Society, 1995; MRS Proceedings Vol. 379, pp. 441-446, 1995. (Partially supported by NSC 85-2215-E-005-002)