Conference Paper

1995 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

 

 2018

  • M. H. Lee, K.-T. Chen, C.-Y. Liao, S.-S. Gu, G.-Y. Siang, Y.-C. Chou, H.-Y. Chen, J. Le, R.-C. Hong, Z.-Y. Wang, S.-Y. Chen, P.-G. Chen, M. Tang, Y.-D. Lin, H.-Y. Lee, K.-S. Li, and C. W. Liu, “Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs,” IEEE International Electron Devices Meeting (IEDM), San Francisco, California, Dec. 1-5, 2018.
  • Zong-You Luo, Ya-Jui Tsou, and C. W. Liu, “Field-Free Spin-Orbit Torque Switching of pMTJ Utilizing Voltage-Controlled Magnetic Anisotropy and STT,” IEDM MRAM workshop, San Francisco, California, Dec. 1-6, 2018.
  • Ya-Jui Tsou, Zong-You Luo, Chia-Che Chung, and C. W. Liu, “Thermal Modeling of FinFET-Driven Spin-Orbit Torque MRAM Considering Thermal Coupling and BEOL Effects,” IEDM MRAM workshop, San Francisco, California, Dec. 1-6, 2018.
  • Hung-Yu Ye, Chia-Che Chung, and C. W. Liu, “Electron Mobility Enhancement by Tensile Strain in Germanium Nanowire NFETs considering surface roughness, channel dopant charge, interface charge, and phonon scattering,” 49th IEEE Semiconductor Interface Specialists Conference(SISC), San Diego, CA, Dec. 5-8, 2018.
  • Fang-Liang Lu, Chung-En Tsai, Shih-Ya Lin, and C. W. Liu, “In-situ B-doped Epi-GeSn Layers on Ge-buffered Si by Chemical Vapor Deposition with High Activation (4.9x1020cm-3), High Sn Content (14%), and High Growth Rate Enhancement (24x),” 49th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 5-8, 2018.
  • (invited) C. W. Liu, Yu-Shiang Huang, Fang-Liang Lu, and Hung-Yu Ye “Ge/GeSn processes and transistor applications,” Americas International Meeting on Electrochemistry and Solid State Science (AiMES), Cancun, Mexico, Sep. 30-Oct. 4, 2018.
  • Jhih-Yang Yan, Chia-Che Chung, Sun-Rong Jan, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu, "Comprehensive Thermal SPICE Modeling of FinFETs and BEOL with Layout Flexibility Considering Frequency Dependent Thermal Time Constant, 3D Heat Flows, Boundary/Alloy Scattering, and Interfacial Thermal Resistance with Circuit Level Reliability Evaluation," Symposium on VLSI Technology (VLSI-Technology), Honolulu , Hawaii, June 18-22, 2018.
  • Chih-Hsiung Huang, Da-Zhi Chang, and C. W. Liu, "Annealing Effects on Al2O3/GeOx/Ge Stack with Al and Pt Electrodes," 1st Joint ISTDM / ICSI 2018 Conference, Potsdam (Berlin), Germany, May 27-31, 2018.
  • Chung-En Tsai, Fang-Liang Lu, Pin-Shiang Chen, and C. W. Liu, “Dopant Effects in Epitaxial GeSn Layers on Si by CVD,” 1st Joint ISTDM / ICSI 2018 Conference, Potsdam (Berlin), Germany, May 27-31, 2018.
  • Hung-Yu Ye, Chia-Che Chung, I-Hsieh Wong, Huang-Siang Lan, C. W. Liu, "Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence," 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Hsinchu, 2018, pp. 1-2.
  • Pin-Shiang Chen, Shou-Chung Lee, A. S. Oates, and C. W. Liu, “BEOL TDDB Reliability Modeling and Lifetime Prediction Using Critical Energy to Breakdown,” IEEE International Reliability Physics Symposium, Burlingame, CA, March 11-15, 2018.
  • Matthew Freeman, Tzu-Ming Lu, Yen Chuang, Jiun-Yun Li, C. W. Liu, Jeremy Curtis, and Lloyd Engel, “Microwave Spectroscopy of Resistive Film Gated Higfets and Mosfets,” APS March Meeting, Los Angeles, CA, Mar. 5-9, 2018.

 2017

  • Yu-Shiang Huang, Fang-Liang Lu, Ya-Jui Tsou, Chung-En Tsai, Chung-Yi Lin, Chih-Hao Huang, and C. W. Liu, “First Vertically Stacked GeSn Nanowire pGAAFETs with Ion=1850mA/mm (VOV=VDS=-1V) on Si by GeSn/Ge CVD Epitaxial Growth and Optimum Selective Etching,” p.832-835, International Electron Devices Meeting (IEDM), 2017.
  • M. H. Lee, P.-G. Chen, S.-T. Fan, Y.-C. Chou, C.-Y. Kuo, C.-H. Tang, H.-H. Chen, S.-S. Gu, R.-C. Hong, Z.-Y. Wang, S.-Y. Chen, C.-Y. Liao, K.-T. Chen, S. T. Chang, M.-H. Liao, K.-S. Li, and C. W. Liu, “Ferroelectric Al:HfO2 Negative Capacitance FETs,” p.565-568, International Electron Devices Meeting (IEDM), 2017.
  • Fang-Liang Lu, Chung-En Tsai, Pin-Shiang Chen, and C. W. Liu, “Doping Effects on Sn Loss in Epi-GeSn on Si by CVD,” 48th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 6-9, 2017.
  • Chung-Yi Lin, H.-S Lan, and C. W. Liu, “Photoluminescence and electroluminescence of strained GeSn quantum wells,” 48th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 6-9, 2017.
  • (invited) C. W. Liu, I-Hsieh Wong, Fang-Liang Lu and Yu-Shiang Huang, "Epitaxial Ge/GeSn high mobility channel transistors," 232nd Meeting of Electrochemical Society, National Harbor, MD, Oct. 1-6, 2017.
  • Fang-Liang Lu, Chung-En Tsai, Shih-Ya Lin, Chih-Chiang Chang, and C. W. Liu, “In-situ P-doped and B-doped epi-GeSn on thin Ge buffer layers on Si with low contact resistivity of 1.1x10-6 (GeSn:P) and 1.9x10-8 (GeSn:B) Ω-cm2,” 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Coventry, UK, May 14-19, 2017.
  • (invited) C. W. Liu, Fang-Liang Lu, Yu-Shiang Huang, I-Hsieh Wong, “High Performance Ge and GeSn Epi Channels," materials research society (MRS) spring meeting & exhibit, Phoenix, Arizona, Apr. 17-21, 2017.

     2016

  • Fang-Liang Lu, I-Hsieh Wong, Shih-Hsien Huang, and C. W. Liu, “Tensile strain recovery and dopant re-activation using laser annealing,” 47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 7-10, 2016.
  • Chung-Yi Lin, Fang-Liang Lu, C. W. Liu, Yi-Chiau Huang, Hua Chung, and Chorng-Ping Chang, “Passivation and photo/electro luminescence of Ge/GeSn/Ge quantum wells,” 47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 7-10, 2016.
  • Jhih-Yang Yan, Sun-Rong Jan, Yu-Jiun Peng, H. H. Lin, W. K. Wan, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, M.-T. Yang, and C. W. Liu, “Thermal Resistance Modeling of Back-end Interconnect and Intrinsic FinFETs, and Transient Simulation of Inverters with Capacitive Loading Effects,” p.898-901, International Electron Devices Meeting (IEDM), 2016.
  • Yu-Shiang Huang, Chih-Hsiung Huang, Fang-Liang Lu, Chung-Yi Lin, Hung-Yu Ye,I-Hsieh Wong, Sun-Rong Jan, Huang-Siang Lan, C. W. Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Schubert S. Chu, and Satheesh Kuppurao “Record High Mobility (428cm2/V-s) of CVD-grown Ge/Strained Ge0.91Sn0.09 /Ge Quantum Well p-MOSFETs,” p.822-825, International Electron Devices Meeting (IEDM), 2016.
  • I-Hsieh Wong, Fang-Liang Lu, Shih-Hsien Huang, Hung-Yu Ye, Chun-Ti Lu, Jhih-Yang Yan, Yu-Cheng Shen, Yu-Jiun Peng, Huang-Siang Lan, and C. W. Liu, “High Performance Ge Junctionless Gate-all-around NFETs with Simultaneous Ion =1235 mA/mm at VOV=VDS=1V, SS=95 mV/dec, high Ion/Ioff=2E6, and Reduced Noise Power Density using S/D Dopant Recovery by Selective Laser Annealing,” p.842-845, International Electron Devices Meeting (IEDM), 2016.
  • M. H. Lee, S.-T. Fan , C.-H. Tang , P.-G. Chen, Y.-C. Chou , H.-H. Chen , J.-Y. Kuo , M.-J. Xie, S.-N. Liu , M.-H. Liao , C.-A. Jong , K.-S. Li , M.-C. Chen , and C. W. Liu, "Physical Thickness 1.x nm Ferroelectric HfZrOx Negative Capacitance FETs,” p.306-309, International Electron Devices Meeting (IEDM), 2016.
  • (invited) C. W. Liu, Jhih-Yang Yan, and Sun-Rong Jan, “Modeling and Simulation of TSV Induced Keep-out Zone Using Silicon Data,” 13th International Conference on Solid-State Integrated Circuit & Technology (ICSICT 2016), Hangzhou, China, Oct. 25-28, 2016.
  • Chih-Hsiung Huang, Sheng-Ting Fan, Pin-Shiang Chen, Raman Sankar, F. C. Chou and C. W. Liu, “Atomically Flat Metal-Insulator-Metal Capacitors with Enhanced Linearity,” 22th IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, USA, June 12-13, 2016.
  • Yu-Shiang Huang, Chih-Hao Huang, Chih-Hsiung Huang, Fang-Liang Lu, Da-Zhi Chang, Chung-Yi Lin, I-Hsieh Wong, Sun-Rong Jan, Huang-Siang Lan, C. W. Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Schubert S. Chu, and Satheesh Kuppurao, “Strained Ge0.91Sn0.09 Quantum Well p-MOSFETs,” 22th IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, USA, June 12-13, 2016.
  • S.-H. Huang, F.-L. Lu, S. V. Kravchenko, and C. W. Liu, “Record High Electron Mobility of 2.4 × 106 cm2/V s in Strained Si by Ultra-low Background Doping,” 8th International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, June 7-11, 2016.
  • F. -L. Lu, S. -H. Huang, and C. W. Liu, "Heavily Phosphorus-doped Si0.1Ge0.9 and Ge on Si with Low Contact Resistivity by Chemical Vapor Deposition and Laser Annealing," 8th International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, June 7-11, 2016.
  • S. -H. Huang, F. -L. Lu, and C. W. Liu, “Low Contact Resistivity (1.5×10-8 Ω-cm2) of Phosphorus-doped Ge by In-situ Chemical Vapor Deposition Doping and Laser Annealing,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2016.
  • Jhih-Yang Yan, Sun-Rong Jan, Yi-Chung Huang, Huang-Siang Lan, C. W. Liu, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, and M.-T. Yang, “Compact Modeling and Simulation of TSV with Experimental Verification,” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2016.
  • T. M. Lu, D. Laroche, S.-H. Huang, E. Nielsen, Y. Chuang, J.-Y. Li, and C. W. Liu, “Electron bilayers in an undoped Si/SiGe double-quantum-well heterostructure,” APS March Meeting, Baltimore, Maryland, Mar. 14-18, 2016.
  • D. Laroche, S.-H. Huang, E. Nielsen, Y. Chuang, J.-Y. Li, C. W. Liu, and T. M. Lu, “Scattering mechanisms in shallow undoped Si/SiGe quantum wells,” APS March Meeting, Baltimore, Maryland, Mar. 14-18, 2016.

    2015

  • Chung-Yi Lin, Shih-Hsien Huang, Chun-Ti Lu, C. W. Liu, ,Yi-Chiau Huang, Hua Chung, and Chorng-Ping Chang “Surface Passivation of Ge/GeSn/Ge Using Atomic Layer Deposited SiO2 and Al2O3,” 46th IEEE Semiconductor Interface Specialists Conference, Arlington, Virginia, Dec. 2-5, 2015.
  • Yu-Shiang Huang, Chih-Hsiung Huang, Chung-Yi Lin and C. W. Liu, “Enhanced performance of Y-GeO2/Ge Gate Dielectric by O2 Post-deposition Annealing and Al Capping,” 46th IEEE Semiconductor Interface Specialists Conference, Arlington, Virginia, Dec. 2-5, 2015.
  • Chun-Ti Lu, Wenchao Wu and C. W. Liu, “3D Simulation and Analysis of Crystalline Silicon Solar Cell-to-Module Optical Gain,” 25th International Photovoltaic Science and Engineering Conference (PVSEC-25), Busan, Korea, Nov. 15-20, 2015.
  • Xiaobo Zhu and C. W. Liu, “Effects of fluctuation on Cu(In,Ga)Se2 solar modules using 3D simulation,” 25th International Photovoltaic Science and Engineering Conference (PVSEC-25), Busan, Korea, Nov. 15-20, 2015.
  • (invited) C. W. Liu, Shih-Hsien Huang, and I-Hsieh Wong, “High mobility Si and Ge” SemiconNano, Hsinchu, Taiwan, Sep. 7, 2015.
  • (invited) C. W. Liu, I-Hsieh Wong, Yen-Ting Chen and Shu-Han Hsu, “High Mobility Ge Channel Transistors,” Advanced Materials World Congress, Stockholm, Sweden, Aug. 23-26, 2015.
  • (invited) C. W. Liu, I-Hsieh Wong, Shih-Hsien Huang and Chih-Hsiung Huang, “3D Ge nanowire transistors,” IEEE Nanotechnology Materials and Devices Conference (NMDC), Anchorage, Alaska, Sep. 13-16, 2015.
  • (invited) C.W. Liu, I.-H. Wong, S.-H. Huang, C.-H. Huang and S.-H. Hsu, “Advanced Germanium Channel Transistors,” 11th International Conference on ASIC (ASICON 2015), Chengdu, China, Nov. 3-6, 2015.
  • Shi  Luo, Eason  Lin, Hai  Xiao, Jiun-Haw  Lee, C. W. Liu, William  Goddard, and Julia  R.  Greer, “Effects of Trioctylphosphine Sulfide Passivation on Na Transport within CuInSe2Thin Films,” MRS spring meeting, San Francisco, Symposium B, paper. No. 9.10. 2015.
  • I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Chih-Hsiung Huang, Yu-Sheng Chen, Tai-Cheng Shieh and C. W. Liu, “Junctionless Gate-all-around pFETs on Si with In-situ Doped Ge Channel”  International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2015. 

    2014

  • Chun-Ti Lu, Qing-Qi Chen, and C. W. Liu, “Al2O3/TiO2 bilayers as passivation and antireflection coating on silicon,” 45th Semiconductor Interface Specialists Conference, 2014.
  • I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Yu-Sheng Chen, Tai-Cheng Shieh, Tzu-Yao Lin, Huang-Siang Lan, and C. W. Liu, “In-situ Doped and Tensily Stained Ge Junctionless Gate-all-around nFETs on SOI Featuring Ion = 828 uA/um, Ion/Ioff ~ 1E5, DIBL= 16-54 mV/V, and 1.4X External Strain Enhancement” p.239-242, International Electron Devices Meeting (IEDM), 2014.
  • (invited) C. W. Liu, Y.-T Chen, and S.-H Hsu "Gate-all-around Ge FETs" 226th Meeting of Electrochemical Society, Cancun, Mexico, Oct. 5-10, 2014.
  • (invited) C. W. Liu, I-Hsieh Wong, Yen-Ting Chen, Wen-Hsien Tu, Shih-Hsien Huang, and Shu-Han Hsu, “Ge Gate-All-Around FETs on Si,” IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (IEEE-ICSICT), Guilin, China, Oct. 2014.
  • (invited) C. W. Liu, Yen-Yu Chen, and Wen-Hsien Tu, "SiGe/Ge epi films with photonic and electrical applications." Science & Applications of Thin Films, Conference & Exhibition (SATF 2014), Turkey, September 15-19, 2014.
  • (invited) C. W. Liu, "High Mobility Ge Channel Transistors" ISMEN (International Symposium on Materials for Enabling Nanodevices), Tainan, Taiwan, Sep 5, 2014
  • Yen-Yu Chen, Chia-Chun Yen, Yi-Hsin Nien, Wen-Wei Hsu, Qing-Qi Chen, and C. W. Liu, “Reabsorption effects on direct band gap emission from germanium light emitting diodes,” The 11th International Conference on Group IV Photonics, Paris, Aug. 27-29, 2014.
  • Yen-Yu Chen, T.-Y. Chang, C.-C. Yen, and C. W. Liu, “Enhanced light extraction of Ge by GeO2 micro hemispheres,” 7th International SiGe Technology and Device Meeting (ISTDM), Singapore, June 2-4, 2014.
  • H.-S. Lan, and C. W. Liu, “Electron Ballistic Current Enhancement of Ge1-xSnx FinFETs”  International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2014.
  • Hung-Chih Chang, Pin-Shiang Chen, Fu-Liang Yang, and C. W. Liu, “Strain Response of Monolayer MoS2 in The Ballistic Regime” International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 2014.                                                                                    

    2013

  • Jhih-Yang Yan, Pin-Shiang Chen, Jiun-Ian Pai, Wen-Wei Hsu and C. W. Liu, “The Incorporation of Electromagnetic Effects on Through Silicon Vias in TCAD Simulation” International Semiconductor Device Research Symposium, 2013.
  • Pin-Shiang Chen, Hung-Chih Chang, Jhih-Yang Yan and C. W. Liu, “Strain Response of Monolayer MoS2 under Ballistic Limit” International Semiconductor Device Research Symposium, 2013.
  • I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Chih-Hsiung Huang, Yu-Sheng Chen, Chun-Liu Chu, Shu-Han Hsu and C. W. Liu, “High Performance Junctionless In-situ Doped Ge Gate-all-around PFETs on Si” International Semiconductor Device Research Symposium, 2013.
  • Chih-Hsiung Huang, Cheng-Ming Lin, Hung-Chih Chang and C. W. Liu, “Post-Gate Fluorine Incorporation by CF4 Plasma on Very High  Tetragonal ZrO2/Ge Gate Stack with Ultrathin EOT of 0.4 nm,” 44th Semiconductor Interface Specialists Conference, 2013.
  • Ya-Shiun Wu ,Yen-Yu Chen , C.-H. Huang, and C. W. Liu, “High efficient N-type solar cells using ion implanted emitters and back surface field,” 23rd International Photovoltaic Science and Engineering Conference (PVSEC-23), 2013.
  • (invited) C. W. Liu, Hung-Chih Chang, Yen-Ting Chen, Wen-Hsien Tu, I-Hsieh Wong, Shu-Han Hsu, and Chun-Lin Chu, “3D Ge transistors,” IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC), Tainan, Taiwan, Oct. 2013.
  • Hung-Chih Chang, Pin-Shiang Chen, and C. W. Liu “Tensile Strain Responses and Dielectric Effect on Monolayer MoS2,” IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC), Tainan, Taiwan, Oct. 2013.
  • Jheng-Sin Liu, Wen-Ling Lu, and C.W. Liu, “Three-dimensional simulation of metal grid effects on Si solar cells,” 23rd International Photovoltaic Science and Engineering Conference (PVSEC-23), 2013.
  • I-Hsieh Wong, Yen-Ting Chen, Huang-Jhih Ciou, Yu-Sheng Chen, Jhih-Yang Yan and C.W. Liu, “Mobility Strain Response and Low Temperature Characterization of Ge p-MOSFETs,” 71st Annual Device Research Conference.
  • Tsun-Hsin Wong, Carissa Eisler, Chris Chen, Jeff Bosco, Daisuke Ryuzaki, Wen-Wei Hsu, C.W. Liu, Chi-Feng Lin, Tien-Lung Chiu, Jiun-Haw Lee, Chuang-Chuang Tsai, and Harry A. Atwater, "Surface Passivation of CuInSe2 with Trioctylphosphine Sulfide," MRS spring meeting 2013.
  • Y. -T. Chen, H. -C. Chang, I. -S. Wong, C. -M. Lin, H. -C. Sun, H. -J. Ciou, W. -T. Yeh, S. -J. Lo, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “EUV Degradation of High Performance Ge MOSFETs,” 2013 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 22-24, 2013. 

2012 

  • C.-H. Shen, J.-M. Shieh, T.-T. Wu, U.-P. Chiou, H.-C. Kuo, P. Yu, T.-C. Lu, Y.-L. Chueh, C.W. Liu, C. Hu, and F.-L. Yang, “Hybrid CIS/Si Near-IR Sensor and 16% PV Energy-Harvesting Technology,” p.279-282, International Electron Devices Meeting (IEDM), 2012.
  • (invited) C. W. Liu, Hung-Chih Chang, Cheng-Ming Lin, and Yen-Ting Chen, “Planar and 3D Ge FETs,” 11th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Xi’an, China, Oct. 29-Nov.1, 2012.
  • Shu-Han Hsu, Hung-Chih Chang, Chun-Lin Chu, Yen-Ting Chen, Wen-Hsien Tu, Fu Ju Hou, Chih Hung Lo, Po-Jung Sung, Bo-Yuan Chen, Guo-Wei Huang, Guang-Li Luo, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “Triangular-channel Ge NFETs on Si with (111) Sidewall-Enhanced Ion and Nearly Defect-free Channels,” p.525-528, International Electron Devices Meeting (IEDM), 2012.
  • Cheng-Ming Lin, Hung-Chih Chang, Yen-Ting Chen, I-Hsieh Wong, Huang-Siang Lan, Shih-Jan Luo, Jing-Yi Lin, Yi-Jen Tseng, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ~43, ~2×10-3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response,” p.509-512, International Electron Devices Meeting (IEDM), 2012.
  • H. -C. Chang, S.-H Hsu, C.-L Chu, W.-H Tu, Y.-T Chen, P.-J Sung, G.-Li Luo, and C. W. Liu, “Germanium Gate-All-Around FETs on SOI”, 222th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 7-12, 2012.
  • Yu-Chun Yin, Hung-Chih Chang, and C. W. Liu, “Low Leakage Junctionless Vertical Pillar Transistor,” International Conference on Solid State Devices and Materials (SSDM), Kyoto, Japan, Sep. 25-27, 2012.
  • W.-S. Ho, M.-H. Tsai, Y.-Y. Chen, W.-W. Hsu , C.-L. Chu, Y.-Y. Chen, S.-W. Tan, and C. W. Liu, “Ion implanted boron emitter n-Si solar cells with wet oxide and Al2O3 passivation,” SuNEC 2012 - Sun New Energy Conference, Sicily, Italy, 4-6 September 2012.
  • (invited) C. W. Liu, H.-S. Lan, and Y.-T. Chen, “Electron scattering in Ge metal-oxide-semiconductor field-effect transistors and mobility strain response,” CSTIC, Shanghai, China, Mar. 19, 2012.
  • Y. –Y. Chen, Y. –H. Nien, Y. –H. Chi, and C. W. Liu, “Reabsorption Effects on Ge Photoluminescence,” submitted to 6th International SiGe Technology and Device Meeting (ISTDM), Berkeley, California, June 4-6, 2012.
  • C. -M. Lin, Y. -T. Chen, H. -C. Chang, H. -S. Lan, I. -H. Wong, S. -J. Luo, J. -Y. Lin, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “ Ge n-MOSFETs using Low Leakage 1nm EOT ZrO2 Gate Dielectrics Nearly Free of Interfacial Layer, submitted to Symposium on VLSI Technology (VLSIT), 2012.
  • Y. -T. Chen, H. -S. Lan, C. -M. Lin, H. -C. Chang, W. -H. Tu, J. -Y. Lin, I. -H. Wong, S. -J. Luo, C. W. Liu, Chenming Hu, and Fu-Liang Yang, “ Strain Response and Doping-dependent Peak Mobility of High Performance Ge (111) n-MOSFETs,submitted to Symposium on VLSI Technology (VLSIT), 2012.
  • (invited) C. W. Liu, H.-S. Lan, and Y.-T. Chen, “Electron scattering in Ge metal-oxide-semiconductor field-effect transistors and mobility strain response,” CSTIC, Shanghai, China, Mar. 19, 2012.

2011

  • (invited) C. W. Liu, “Silicon Solar Cells with n-type Base,” BIT's 1st Annual World Congress of Nano-S&T, Dalian, China, October 23-26, 2011.
    H.-L. Chang, H.-C. Li, C. W. Liu, F. Chen, and M.-J. Tsai, “A parameterized SPICE macromodel of resistive random access memory and circuit demonstration,” IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan, Sep. 8-10, 2011.
  • C. W. Liu, T. -H. Cheng, S. -R. Jan, C. -Y. Chen, and S. T. Chan, “Direct and indirect radiative recombination from Ge,” 7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, Aug 28 - Sep 1, 2011.
  • Y.-Y. Chen, Wei-Chiang Chang, S. T. Chan, and C. W. Liu, “Germanium oxide passivation for Ge absorber,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, June 19-24, 2011.
  • W. S. Ho, Y.-H. Huang, W.-W. Hsu, Y.-Y. Chen, Y.-Y. Chen, and C. W. Liu, “Ion Implanted Boron Emitter N-Silicon Solar Cells With Wet Oxide Passivation,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, June 19-24, 2011.
  • Y.-J. Yang, J. Y. Chen, H.-C. Sun, C. W. Liu, M.-H. Tseng, C.-C. Bi, and C.-H. Yeh, “Microcrystalline silicon solar cells with heterojunction structure,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington, June 19-24, 2011.
  • T. -H. Cheng , J. Y. Chen , W. W. Hsu , C. W. Liu, C. Y. Hsiao, and H. R. Tseng, “Defect Related Negative Temperature Coefficiency of Short Circuit Current of Cu(In,Ga)Se2 Solar Cells,” 37th IEEE Photovoltaic Specialist Conference, Seattle, Washington , June 19-24, 2011.
  • H.-C. Sun, J. Y. Chen, Y.-J. Yang, T.-M. Chao, C. W. Liu, W.-Y. Lin, C.-C. Bi, and C.-H. Yeh, “applying reverse bias to recover the light-induced degradation of amorphous silicon germanium solar cells” Photovoltaic Technical Conference - Thin Film & Advanced Solutions 2011, Aix-en-Provence, France, May. 25-27, 2011.
  • W.-W. Hsu, J. Y. Chen, T. -H. Cheng, S. C. Lu , S.-T. Chan, W. S. Ho, and C. W. Liu, “Surface Passivation of Cu(In,Ga)Se2 by Atomic Layer Deposited Al2O3,” Photovoltaic Technical Conference - Thin Film & Advanced Solutions 2011, Aix-en-Provence, France, May. 25-27, 2011.
    (invited) C. W Liu, “high mobility channels,” 2011 International Workshop on Exploratory Research for Semiconductor Devices and VLSI Packaging, Beijing, China, Mar. 16, 2011.
  • (invited) C. W. Liu, “high mobility materials for technologies and physics.” 5th International Workshop on High k dielectrics on high carrier mobility semiconductors, Hsinchu, Taiwan., 2011.
  • (invited) C. W. Liu , T. -H. Cheng , C. -Y. Chen , and S. T. Chan  “Photoluminescence and Electroluminescence from Ge ” symposium on Si-based materials and devices, Xiamen, China, May 27-29, 2011.
  • C. W. Liu , T. -H. Cheng , C. -Y. Chen , and S. T. Chan  “Enhancements of direct band gap transition from Ge ” 2011 Taiwan-USAF Nanoscience Workshop, Seattle, U.S.A, April, 5-6, 2011.
  • H.-L. Chang, H.-C. Li, C. W. Liu, F. Chen, and M.-J. Tsai, “Physical mechanism of HfO2-based bipolar resistive random access memory,” accepted by 2011 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 25-27, 2011.

2010

  • Yen Chun Fu, William Hsu, Yen-Ting Chen, Huang-Siang Lan, Cheng-Han Lee, Hung-Chih Chang, Hou-Yun Lee, Guang-Li Luo, Chao-Hsin Chien, C. W. Liu, Chenming Hu, and Fu-Liang Yang High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response,” International Electron Devices Meeting (IEDM), 2010.
  • T. M. Lu, W. Pan, D. C. Tsui, C. -H. Lee, and C. W. Liu, “In-plane magnetoresistivity of high-mobility two-dimensional electrons in an undoped Si/SiGe quantum well at 20 mK” March Meeting of the American Physical Society, Portland, Oregon, USA, March 15-19, 2010.
  • “Invited” C. W. Liu, “ High mobility for physics and technologies” the III Nanotechnology International Forum , November 1-3 2010, Moscow.
  • C. -H. Lee, W. H. Tu, C. M. Lin, H. T. Chang, S. W. Lee, and C. W. Liu, “Surface Orientation Effects on SiGe Quantum Dots and Nanorings Formation” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • S. -R. Jan, C. -H. Lee, T. -H. Cheng , Y. -Y. Chen, K. -L. Peng, S. -T. Chan, C. W. Liu, Y. Yamamoto, and B. Tillack, “Extrinsic effects of indirect radiative transition of Ge,” by 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • C. -M. Lin, Y. -T. Chen, C.-H. Lee, H.-C. Chang, W. -C. Chang, and C. W. Liu, "Enhanced Voltage Linearity of HfO2 Metal-Insulator-Metal Capacitors by H2O Prepulsing Treatment on Bottom Electrode"", 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • T. -H. Cheng , W. W. Hsu , C.Y. Huang, J.-A. Lu, J. Y. Chen, and C. W. Liu, "Photoluminescence Characterization and Passivation of CIGS Absorber", 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • T. -H. Cheng , K.-L. Peng, C. -Y. Ko , C.-Y. Chen , S. T. Chan, and C. W. Liu, "Enhancements of Direct Band Radiative Recombination from Ge", 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • H.-C. Sun, W.-D. Chen, T. H. Cheng, Y.-J. Yang and C. W. Liu, “Recovery of light induced degradation of micromorph solar cells by reverse bias,” 218th Meeting of Electrochemical Society, Las Vegas, Nevada, Oct. 10-15, 2010.
  • Invited” T. M. Lu, C. -H. Lee, D. C. Tsui, and C. W. Liu, “High mobility two-dimensional electron gas in strained Si,” 5th International SiGe Technology and Device Meeting (ISTDM), Stockholm, Sweden, May24-26, 2010.
  • C. -H. Lee, W. -H. Tu, H. T. Chang, Y. -C. Fu, S. W. Lee, and C. W. Liu, “SiGe quantum dots and nanorings on Si(111),” by 5th International SiGe Technology and Device Meeting (ISTDM), Stockholm, Sweden, May24-26, 2010.
  • W. S. Ho, Y.-Y. Chen, T.-H. Cheng, J.-Y. Chen, J.-A. Lu, P.-L. Huang, and C. W. Liu, “Thermal oxide, Al2O3 and amorphous-Si passivation layers on silicon,” accepted by 35th IEEE Photovoltaic Specialist Conference, June 20-25, 2010 at the Hawaiian Convention Center in Waikiki, Hawaii.
  • “Laser Annealing and Local Heating Effects during Raman Measurement of Hydrogenated Amorphous Silicon Films,” ECS Transactions - CSTIC 2010, Vol. 27, Silicon Technology for Electronic and Photovoltaic Applications, 2010.
  • T. M. Lu, W. Pan, D. C. Tsui, C. -H. Lee, and C. W. Liu, “In-plane magnetoresistivity of high-mobility two-dimensional electrons in an undoped Si/SiGe quantum well at 20 mK”  by March Meeting of The American Physical Society, Portland, Oregon, USA, March 15-19, 2010.

2009

  • T. -H. Cheng, K.-L. Peng, C.Y. Huang, W. D. Chen, and C. W. Liu, “Characterization of CIGS solar cell absorber”,  by 2009 International Photovoltaic Solar Energy Conference and Exhibition (IPVSEE 2009), Beijin, China
  • H.-C. Chang, P.-S. Kuo, C.-Y. Peng, Y.-T. Chen, W.-Y. Chen, and C. W. Liu, “Optimization of A Saddle-like FinFET by Device Simulation for Sub-50nm DRAM Application,”  2009 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2009.
  • Y.-T. Chen, C.-F. Huang, H.-C. Sun, T.-Y. Wu, C.-Y. Ku, C. W. Liu, Y.-C. Hsu, and J.-S. Chen, “A Design of 1T Memory Cells Using Channel Traps for Long Data Retention Time,” accepted by 2009 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2009.
  • G.-L. Luo, S.-C. Huang, C.-T. Chung, Dawei Heh, C.-H. Chien, C.-C. Cheng, Y.-J. Lee, W.-F. Wu, C.-C. Hsu, M.-L. Kuo, J.-Y. Yao, M.-N. Chang, C. W. Liu, C.-M. Hu, C.-Y. Chang, and F.-L. Yang, “A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced Leakage,” IEDM, Baltimore, 2009.
  • T.-H. Cheng, C. -Y. Ko, C.-Y. Chen, K.-L. Peng, C. W. Hsu, P.K. Chiang, and C. W. Liu, “Luminescence from monolithic GaInP/GaInAs/Ge triple-junction solar cells”, International Photovoltaic Science and Engineering Conference and Exhibition , ICC JEJU, Korea, November 9-13, 2009.
  • W.S. Ho, J.-F. Liao, Y.-Y. Chen, C.-A. Lu, W.-D. Chen, W.-F. Tsai, C.-F. Ai, and  C. W. Liu, “Passivation of solar cell by Plasma Immersion Ion Implantation”, 19th International Photovoltaic Science and Engineering Conference and Exhibition , ICC JEJU, Korea, November 9-13, 2009.
  • C.-F. Huang, H.-C. Sun, P.-S. Kuo, Y.-T. Chen, C. W. Liu, Y.-J. Hsu, and J.-S. Chen, “Dynamic Bias Temperature Instability of p-channel Polycrystalline Silicon Thin-film Transistors,”  16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009), Suzhou, China, July 6-10, 2009.
  • C.-H. Lee, Y. -Y. Shen, Y. Y. Chen, H.-T. Chang, S. W. Lee, and C. W. Liu, “SiGe Quantum Dots and Quantum Rings on Si(110) by Ultra-High Vacuum Chemical Vapor Deposition,”  6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), p. 43, Los Angeles, USA, May 17-22, 2009.
  • P. S. Chen, S. W. Lee, and C. W. Liu, “Enhanced relaxation and thermal stability in thin SiGe films with an inserted Si1-yCy layer,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P13, Los Angeles, p. 113, USA, May 17-22, 2009.
  • C.-H. Lin and C. W. Liu, “Relation between Currents and Positions of Delta-Doped Layers in SiGe QDIPs,”  6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P113, Los Angeles, USA, May 17-22, 2009.
  • T.-H. Cheng, P.-S. Kuo, C.-Y. Ko, C.-Y. Chen, and C. W. Liu, “Minority carrier lifetime measurement of monocrystalline silicon solar cell by temporal electroluminescence method,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P125, Los Angeles, USA, May 17-22, 2009.
  • C.-Y. Peng, Y.-H. Yang, C.-M. Lin, Y.-Y. Shen, M. H. Lee, and C. W. Liu, “The Process Strain Determination of Nickel Germanides by Raman Spectroscopy,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), p. 123, Los Angeles, USA, May 17-22, 2009.
  • H. T. Chang, S. W. Lee, C.-H. Lee, S. L. Cheng, and C. W. Liu, “Ge redistribution of self-assembled Ge islands on Si (001) during annealing,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), P63, Los Angeles, USA, May 17-22, 2009.
  • Y.-Y. Chen, W.-S. Ho, C.-H. Lee, Y.-H. Yang, W.-D. Chen, C. W. Liu, “The Ge1-xSnx MOS Infrared Photodetector,”  6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), p. 114, Los Angeles, USA, May 17-22, 2009.
  • H.-L. Chang, H.-C. Chang, S.-C. Yang, H.-C. Tsai, H.-C. Li, and C. W. Liu, “Improved SPICE Macromodel of Phase Change Random Access Memory,”  2009 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), Hsinchu, Taiwan, April 27-30, 2009.

2008

  • H.-C. Sun, C.-F. Huang, Y.-T. Chen, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “A New NBTI Characterization Method on Polycrystalline Silicon Thin-Film Transistors,” accepted by 15th International Display Workshop (IDW), Proceeding Vol. 2, pp. 659-662, Niigata, Japan, Dec. 3-5, 2008.
  • C.-F. Huang, Y.-T. Chen, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Bias Temperature Instability on Polycrystalline Silicon Thin-Film Transistors,”  2008 International Electron Devices and Materials Symposia (IEDMS), Taichung, Taiwan, Nov. 28-29, 2008.
  • C.-H. Lee, C. M. Lin, Y. -Y. Sen, S. W. Lee P. Shushpannikov, R. V. Goldstein, and C. W. Liu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition,” 2008 International Electron Devices and Materials Symposia (IEDMS), Taichung, Taiwan, Nov. 28-29, 2008.
  • W. S. Ho, C.-H. Lin, P.-S. Kuo, W. W. Hsu, T.-H. Cheng, Y.-Y Chen and C. W. Liu “Metal Oxide Semiconductor UV Sensor,” 7th IEEE Conference on Sensors, Lecce, Italy, Oct 26-29, 2008.
  • “Invited” C.-F. Huang, Y.-T. Chen, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, K.-C. Lin, and J.-S. Chen, “Comprehensive Study of Bias Temperature Instability on Polycrystalline Silicon Thin-Film Transistors,” 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, Oct. 20-23, 2008.
  • C.-Y. Peng, Y.-H. Yang, C.-M. Lin,Y.-J. Yang, C.-F. Huang, and C. W. Liu, “Process Strain Induced by Nickel Germanide on (100) Ge Substrate,” 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, Oct. 20-23, 2008.
  • S. W. Lee, H. T. Chang, C. -H. Lee, C. A. Chueh, S. -L. Cheng, W. -W. Wu, C. W. Liu, “Vertical Self-Alignment of SiGe Nanolenses on Si (001),” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008
  • C.-H. Lee, C. M. Lin, S. W. Lee, P. Shushpannikov, R. V. Goldstein and C. W. Liu, “SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008
  • C.-Y. Peng, C.-F. Huang, Y.-J. Yang, S. Chakraborty, Y.-H. Yang, C.-W. Lai, C. M. Lin and C. W. Liu, “Micro-Raman Studies on Nickel Germanides formed on (110) crystalline Ge,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008
  • C.-F. Huang, Y.-J. Yang, C.-Y. Peng, H.-C. Sun, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Polarity Change of Threshold Voltage Shifts for n-channel Polycrystalline Silicon Thin-Film Transistors Stressed by Negative Gate Bias,” 214th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 12-17, 2008.
  • S. W. Lee, C.-H. Lee, H. T. Chang, S. L. Cheng, and C. W. Liu, “Evolution of composition distribution of Si-capped Ge islands on Si (001),” 4th International Conference on Technological Advances of Thin Films & Surface Coatings (Thin Films 2008), Singapore, July 13-16, 2008.
  • W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide Photodetector,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008. (Best Student Paper Award)
  • S.-W. Lee, H. T. Chang, C.A. Chueh, S. L. Cheng, C.-H. Lee, and C. W. Liu, “The Compositional Distribution of Ge Islands Grown by Ultra-High Vacuum Chemical Vapor Deposition,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008.
  • H.-L. Chang, P.-S. Kuo, W.-C. Hua, C.-P. Lin, C.-Y. Lin, C. W. Liu, “Crosstalk Reduction Technique Between Dual SiGe Power Amplifiers,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008.
  • C.-Y. Peng, C.-F. Huang, Y.-J. Yang, S. Chakraborty, and C. W. Liu, “Nickel Germanide Formation: Orientation and Temperature Effects,” 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, May 11-14, 2008.

2007

  • T.-H. Cheng, C. T. Lee, M. H. Liao, P. -S. Kuo, T. A. Hung, and C. W. Liu, “Electrically pumped Ge Laser at room temperature,” International Electron Devices Meeting (IEDM), Washington D.C., Dec. 2007.
  • C.-F. Huang, Y.-J. Yang, C.-Y. Peng, H.-C. Sun, C. W. Liu, C.-W. Chao, and K.-C. Lin, “Comprehensive Study on Dynamic Bias Temperature Instability of p-channel Polycrystalline Silicon Thin-film Transistors,” accepted by 2007 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2007.
  • Y.-J. Yang, M. H. Liao, C. W. Liu, Lingyen Yeh, T.-L. Lee, M.-S. Liang, “Superior n-MOSFET Performance by Optimal Stress Design,” 2007 International Semiconductor Device Research Symposium (ISDRS), Maryland University, Dec., 2007.
  • P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, C. W. Liu, “Si/SiGe/Si Quantum well Schottky barrier diodes,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
  • S. W. Lee, P.-S. Chen, M.-H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C2H4 and SiCH6 mediation by ultra-high vacuum chemical vapor deposition,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
  • P.-S. Chen, S. W. Lee, M.-H. Lee,  and C. W. Liu, “Formation of Relaxed SiGe on the buffer consisting of modified SiGe islands by Si Pre-mixing,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
  • C.-H. Lee, C.-Y. Yu, C. M. Lin, H. Lin, W.-H. Chang, and C. W. Liu, “Carrier Gas Effects on SiGe Growth by Ultra-high Vacuum Chemical Vapor Deposition,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, Nov. 2007.
  • W.-S. Liao, S.-Y. Huang, T. Shih, and C. W. Liu, “Current and Speed Enhancements at 90nm Node through Package Strain,” International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, Sept. 2007.
  • T.-H. Cheng, C.-H. Lee, M. H. Liao, and C. W. Liu, “Electroluminescence from strained SiGe quantum dot light-emitting diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007.
  • S.-R. Jan, M. H. Liao, T.-H. Cheng, Y. Deng and C. W. Liu, “Blue Electroluminescence from Metal/Oxide/n-6H-SiC Tunneling Diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007.
  • P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu, “Novel Transport mechanism of SiGe dot MOS tunneling diodes,” 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, Aug. 2007.
  • C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” International Conference on Surfaces, Coatings and Nanostructured Materials (NanoSMat 2007), Algarve, Portugal, July 9-11, 2007.
  • C.-H. Lin, C.-H. Lee, Y.-T. Chiang, C.-C. Hsu, Y. Deng, Y.-H. Dai, and C. W. Liu, “Ge-on-Polyimide Photodetector,” International Symposium for Flexible Electronics and Display (ISFED), Hsinchu, Taiwan, 17-18 Dec. 2007.
  • C.-Y. Peng, M. H. Liao, C.-F. Huang, Y. J. Yang, S. T. Chang, and C. W. Liu, “Strain effects on MOS  capacitors and Schottky diodes,” 5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May, 2007. 
  • Y.-J. Yang, S. T. Chang, and C. W. Liu, “Electron Mobility Enhancement in STRAINED-Germanium NMOSFETs and Impact of Strain Engineering in Ballistic Regime,” International Symposium VLSI Technology, System, and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 2007.

2006

  • H.-L. Chang, P.-T. Lin, W.-C. Hua, C.-P. Lin, C.-Y. Lin, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “Differential Power Combining Technique for General Power Amplifiers Using Lumped Component Network,” Asia-Pacific Microwave Conference (APMC), Yokohama, Japan, Dec. 2006.
  • “Invited” C.-H. Lin and C. W. Liu, “MOS Si/Ge photodetectors,” Optoelectronic Devices: Physics, Fabrication, and Application III, SPIE Symposium, Boston, Oct. 1-4, 2006.
  • “Invited” C. W. Liu, and F. Yuan, “Mobility enhancement technologies,” 8th International Conference on Solid-state and Integrated Circuit Technology (ICSICT-06), Shanghai, China, Oct. 2006.
  • “Invited” M. H. Liao, C.-H. Lin, C.-H. Lee, T.-H. Cheng, T.-H. Guo, and C. W. Liu, “Electroluminescence from SiGe based metal-oxide-semiconductor Tunneling Diodes,” 210th Meeting of Electrochemical Society, Mexico, Oct. 29-Nov. 3, 2006.
  • C.-H. Lin, C.-Y. Yu, M. H. Liao, C.-F. Huang, C.-J. Lee, C.-Y. Lee, and C. W. Liu, “The Process and Optoelectronic Characterization of Ge-on-Insulator,” 210th Meeting of Electrochemical Society, Mexico, Oct. 29-Nov. 3, 2006.
  • M. H. Liao, S. T. Chang, P. S. Kuo, H.-T. Wu, C.-Y. Peng, and C. W. Liu, “Strained Pt Schottky diodes on n-type Si and Ge,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 22. 2006.
  • Y. M. Lin, S. L, Wu, S. J. Chang, P. S. Chen, and C. W. Liu, “Impact of SiN on performance in Novel CMOS Architecture using substrate strained-SiGe and mechanical strained Si technology,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 64. 2006.
  • M .H. Lee, S. T. Chang, S. Maikap, C.-Y. Yu, and C. W. Liu, “The interface properties of SiO2/strained Si with carbon incorporation surface channel MOSFETs,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 88. 2006.
  • M. H. Liao, T.-H. Cheng, T. C. Chen, C.-H. Lai, C.-H, Lee, and C. W. Liu, “Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes,” 3rd International SiGe Technology and Device Meeting (ISTDM), New Jersey, May 15-17, pp. 222. 2006.
  • W.-C. Hua, P.-T. Lin, C.-P. Lin, C.-Y. Lin, H.-L. Chang, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “Coupling Effects of Dual SiGe Power Amplifiers for 802.11n MIMO Applications,” 2006 IEEE Radio Frequency Integrated Circuits (RFIC) Conference Symp. Dig., San Francisco, USA, pp. 81-84, 2006.

2005

  • C.-Y. Peng, F. Yuan, M. H. Lee, C.-Y. Yu, S. Maikap, M. H. Liao, S. T. Chang, and C. W. Liu, “Novel Schottky Barrier Ge/Si Heterojunction PMOS,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., 2005.
  • I.-J. Yang, C.-Y. Peng, S. T. Chang, and C. W. Liu, “Calculation of the Electron Mobility in Silicon Inversion Layers: Dependence on Surface Orientation, Channel Direction, and Stress,” International Semiconductor Device Research Symposium (ISDRS), Washington D.C., 2005.
  • M. H. Liao, C.-Y. Yu, C.-F. Huang, C.-H. Lin, C.-J. Lee, M.-H. Yu, S. T. Chang, C.-Y. Liang, C.-Y. Lee, T.-H. Guo, C.-C. Chang, and C. W. Liu, “2m emission from Si/Ge heterojunction LED and up to 1.55 m detection by GOI detector with strain-enhanced features,” 51st International Electron Devices Meeting (IEDM), Washington D.C., 2005.
  • “Invited” P. S. Chen, M. H. Lee, S. W. Lee, C. W. Liu, and M. -J. Tsai, “Strained CMOS technology with Ge,” 207th Meeting of Electrochemical Society, Quebec City, Canada, May 15-20, 2005.
  • C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, and C. W. Liu, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” p.322, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  • S. W. Lee, P. S. Chen, K. F. Liao, M.-J. Tsai, C. W. Liu, and L. J. Chen, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” p.116, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  • Y. H. Peng, P. S. Chen, M.-J. Tsai, K. T. Chen, C. W. Liu, C. H. Kuan, and S. C. Lee, “The study of Electro-Luminescence from Ge/Si quantum dots and Si/SiGe supperlattices,” p.226, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  • S. W. Lee, Y. L. Chueh, P. S. Chen, H. C. Chen, C. W. Liu, and L. J. Chen, “Field emission properties of self-assembled Ge quantum dots grown by ultrahigh vacuum chemical vapor deposition,” pp.296, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  • P.-S. Kuo, C.-H. Lin, P. S. Chen, and C. W. Liu, “The current transport mechanism of MOS Photodetector with Pt Gate,” p.220, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), May 23-26, 2005.
  • W.-C. Hua, H.-H. Lai, P.-T. Lin, C. W. Liu, T.-Y. Yang, and G.-K. Ma, “High-Linearity and Temperature-Insensitive 2.4 GHz SiGe Power Amplifier with Dynamic-Bias Control,” 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Conference Symp Dig., long beach, CA, USA,. June, pp. 609-612, 2005

2004

  • S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C.-F. Huang, S. T. Chang, and C. W. Liu, “Package-strain-enhanced device and circuit performance,” 50th International Electron Devices Meeting (IEDM), pp. 233-236, San Francisco, Dec. 13-15, 2004. (Cited No./Self Cited No.= 8 / 5)
  • C.-Y. Yu, P.-W. Chen, M.-H. Liao, and C. W. Liu, “Buckled SiGe layers on viscous SGOI substrates by wafer bonding and layer transfer techniques,” 15th International Conference on Ion Implantation Technology (IIT), 2004.
  • P. S. Chen, S. W. Lee, C.W. Liu, and M.-J. Tsai, “Thin relaxed SiGe layer for strained Si CMOS,” Semiconductor Manufacturing Technology Workshop Proceedings, pp.79-82,2004.
  • P. S. Chen, K. F. Liao, M. H. Lin, S. W. Lee, C.W. Liu, and M.-J. Tsai, “Influence of H and He implantation on surface morphology and relaxation in SiGe/Si (100),” 15th International Conference on Ion Implantation Technology (IIT), 2004.
  • P. S. Chen, S. W. Li, W. Y. Hiseh, M.-J. Tsai, and C. W. Liu, “UHV/CVD of Si1-x-yGexCy/Si and Si1-yCy/Si heterostructure,” International Conference in Asia IUMRS-ICA, Hsinchu, Taiwan, Nov. 16-18, 2004.
  • P. S. Chen, M.-J. Tsai, C. W. Liu, and S. W. Lee, “Carbon mediation on the growth of self-assembled Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition,” 51st International Symposium of American Vacuum Society, Anaheim, CA, 2004.
  • S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, and C. W. Liu, “The growth of high-quality SiGe films by introducing an intermediate Si:C layer,” 51st International Symposium of American Vacuum Society, Anaheim, CA, 2004.
  • S. W. Lee, P. S. Chen, M. H. Lee, C. W. Liu and L. J. Chen, “The growth of high-quality SiGe films with an Intermediate Si layer for strained Si nMOSFETs,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
  • P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M.-J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial SiGe:C and SiC thin films on Si(001) with ethylene (C2H4) precursor as carbon source,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
  • “Invited” C. W. Liu, F. Yuan, Z. Pei, and J.-W. Shi, “Si/SiGe heterojunction phototransistor: physics and modeling,” Second International Symposium on Integrated Optoelectronics, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  • P. S. Chen, Z. Pei, S. W. Lee, C. W. Liu, and M.-J. Tsai, “Nanostructure and optical properties of self-assembled Ge quantum dots grown in a hot wall UHV/CVD system,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  • “Invited” C. W. Liu, S. Maikap, M.-H. Liao and F. Yuan., “BiCMOS devices under mechanical strain,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  • S. T. Chang, M. H. Lee, and C. W. Liu, “Strained Si1-xCx on Field Transistor on SiGe Substrate,” M2 SiGe: Materials, Processing, and Devices Symposium, 206th Meeting of Electrochemical Society, Honolulu, Hawaii, Oct. 3-8, 2004.
  • “Invited” C. W. Liu and B.-C. Hsu, “CMOS optoelectronics,” Advance Short-time Thermal Processing for Si-Based CMOS Devices II, 205th Meeting of Electrochemical Society, San Antonio, Texas, May 9-14, 2004.
  • “Invited” M. H. Lee, P. S. Chen, W.-C. Hua, C.-Y. Yu, Y.-C. Lee, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W.-Y. Hsieh, and M.-J. Tsai, “The Noise Characteristics in Strained-Si MOSFETs,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
  • C.-Y. Yu, T. C. Chen, S.-H. Huang, L. S. Lee, and C. W. Liu, “Electrical and Optical Reliability Improvement of HfO2 Gate Dielectric by Deuterium and Hydrogen Incorporation,” pp.165-168, 11th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2004.
  • T. C. Chen, L. S. Lee, W. Z. Lai, and C. W. Liu, “The Characteristic of HfO2 on Strained SiGe,” 2nd International SiGe Technology and Device Meeting (ISTDM), Frankfurt (Oder), Germany, May 16-19, 2004.
  • P.J. Tzeng, S. Maikap, W. Z. Lai, C. S. Liang, P.S. Chen, L.S. Lee, C. W. Liu, “Post deposition annealing effects on the reliability of ALD HfO2 on strained SiGe layers,” pp.29-32, 11th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2004.
  • C.-H. Lin, P.-S. Kuo, P. S. Chen, C.-Y. Yu, S. T. Chang, C. W. Liu, “Raising Operation Temperature of MOS Ge/Si Quantum Dot Infrared Photodetectors,” International Electron Devices and Materials Symposia (IEDMS), pp. 277-280, Hsinchu, Taiwan, 2004.
  • P.-S. Kuo, C.-H. Lin, B.-C. Hsu, P.S. Chen, C.W. Liu “A Dual-bias Operated MOS Photodetector with Pt Gate,” International Electron Devices and Materials Symposia (IEDMS), pp