Journal Paper

1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010  2011  2012 2013 2014 2015 2016 2017 2018

 

2018

  • Hung-Yu Ye, Chia-Che Chung and C. W. Liu, "Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence," in IEEE Transactions on Electron Devices, vol. 65, no. 12, pp. 5295-5300, Dec. 2018
  • Chung-Yi Lin, Hung-Yu Ye, Fang-Liang Lu, H. S. Lan, and C. W. Liu, “Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well,” Opt. Mater. Express 8, 2795-2802, 2018
  • V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields,” JETP Letters, Vol. 107, No. 12, pp. 794-797, 2018.
  • Yu-Shiang Huang, Fang-Liang Lu , Ya-Jui Tsou, Hung-Yu Ye, Shih-Ya Lin, Wen-Hung Huang, and C. W. Liu, ” Vertically Stacked Strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD Epitaxial Growth and the Optimum Selective Channel Release Process”, IEEE Electron Device Letters, Vol. 39, No. 9, pp.1274-1277, 2018.
  • Chung-En Tsai, Fang-Liang Lu, Pin-Shiang Chen, and C. W. Liu, “Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition,” Thin Solid Films, Vol. 660, pp. 263-266, 2018.
  • Fang-Liang Lu, Chung-En Tsai, I-Hsieh Wong, Chun-Ti Lu, and C. W. Liu, “Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing With Device Applications,” IEEE Transactions on Electron Devices, Vol. 65, No. 7, pp. 2925-2931, 2018.
  • E. Bussmann, John King Gamble, J. C. Koepke, D. Laroche, S. H. Huang, Y. Chuang, J.-Y. Li, C. W. Liu, B. S. Swartzentruber, M. P. Lilly, M. S. Carroll, and T.-M. Lu, “Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices,” Physical Review Materials 2, 066004, 2018.

2017

  • M. Yu. Melnikov, V. T. Dolgopolov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/ SiGe quantum wells,” Journal of Applied Physics 122, 224301, 2017.
  • M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Indication of band flattening at the Fermi level in a strongly correlated electron system,” Scientific Reports 7, 14539, 2017.
  • T. M. Lu, C. T. Harris, S.-H. Huang, Y. Chuang, J.-Y. Li, and C. W. Liu, “Effective g factor of low-density two-dimensional holes in a Ge quantum well,” Appl. Phys. Lett., Vol. 111, 102108, 2017.
  • Chun-Ti Lu, Fang-Liang Lu, Chung-En Tsai, Wen-Hung Huang, and C. W. Liu, “Process simulation of pulsed laser annealing on epitaxial Ge on Si,” ECS J. Solid State Sci. Tech., Vol. 6, pp. 495-498, 2017.
  • T. M. Lu, L. A. Tracy, D. Laroche, S.-H. Huang, Y. Chuang, Y.-H. Su, J.-Y. Li, and C. W. Liu, “Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system,” Scientific Reports 7, 2468, 2017.
  • Yu-Shiang Huang, Ya-Jui Tsou, Chih-Hsiung Huang, Chih-Hao Huang, Huang-Siang Lan, C. W. Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Schubert S. Chu, and Satheesh Kuppurao.,” High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness”, IEEE Trans. on Electron Devices, Vol. 64, No. 6, pp.2498-2504, 2017.
  • H.-S. Lan, S. T. Chang, and C. W. Liu, “Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys,” 95, 201201(R), Phys. Rev. B, Rapid Communication, 2017.
  • Chih-Hsiung Huang, Yu-Shiang Huang, Da-Zhi Chang, Tzo-Tao Lin, and C. W. Liu, “Interface trap density reduction due to AlGeO interfacial layer formation by Al capping on Al2O3/GeOx/Ge stack,” IEEE Transactions on Electron Devices, Vol. 64, No. 4, pp. 1412-1417, 2017.
  • H.-S. Lan and C. W. Liu, “Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces,” 50, 13LT02, J. Phys. D: Appl. Phys., 2017.
  • Pin-Shiang Chen, Sheng-Ting Fan, Huang-Siang Lan, C. W. Liu, “Band calculation of lonsdaleite Ge,” J. Phys. D: Appl. Phys. 50, 015107, 2017.

2016

  • Hung-Yu Ye, Huang-Siang Lan, and  C. W. Liu, “Electron Mobility in Junctionless Ge Nanowire NFETs,” IEEE Transactions on Electron Devices, Vol. 63, No.11, pp. 4191, 2016.
  • Chung-Yi Lin, Chih-Hsiung Huang, Shih-Hsien Huang, Chih-Chiang Chang, C. W. Liu, Yi-Chiau Huan , Hua Chung, Chorng-Ping Chang “Photoluminescence and electroluminescence from Ge⁄strained GeSn⁄Ge quantum wells” Appl. Phys. Lett., Vol. 109, 091103, 2016.
  • S.-T. Fan, J.-Y. Yan, D.-C. Lai, C. W. Liu, “The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance,” Solid-State Electronics, Volume 122, Pages 13-17, 2016.
  • X. Zhu, T.-H. Cheng, and C. W. Liu, “Ga Content and Thickness Inhomogeneity Effects on Cu(In, Ga)Se2 Solar Modules”, Electronic Materials Letters, Vol. 12, No. 4, pp. 506-511, 2016.
  • D. Laroche, S.-H. Huang, Y. Chuang, J.-Y. Li, C. W. Liu and T. M. Lu, “Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure,” Appl. Phys. Lett., Vol. 108, 233504, 2016.
  • Chun-Ti Lu, Yu-Shiang Huang and C. W. Liu, “Passivation of Al2O3 / TiO2 on monocrystalline Si with relatively low reflectance,” J. Phys. D: Appl. Phys. 49, 245105, 2016. 
  • Chieh Lo, Zheng-Lun Feng, Wei-Lun Huang, C. W. Liu, T. -L. Chen, and C. H. Chou, “Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-film Transistors due to Mobile Sodium,” IEEE J. of Electron Devices Society, Vol. 4, No. 5, pp. 353-357, 2016.
  • Shi Luo, Carissa Eisler, Tsun-Hsin Wong, Hai Xiao, Chuan-En Lin, Tsung-Ta Wu, Chang-Hong Shen, Jia-Min Shieh, Chuang-Chuang Tsai, C. W. Liu, Harry A. Atwater, William A. Goddard III, Jiun-Haw Lee, Julia R. Greer, “Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation,” Acta Materialia, Volume 106, Pages 171–181, 2016. 
  • T. M. Lu, D. Laroche, S.-H. Huang, Y. Chuang, J.-Y. Li, and C. W. Liu, “High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential,” Scientific Reports 6, 20967, 2016.        

    2015

  • S.-H. Huang, F.-L. Lu, W.-L. Huang, C.-H. Huang, and C. W. Liu, “The ∼3×1020 cm−3 electron concentration and low specific contact resistivity of phosphorus-doped Ge on Si by in-situ chemical vapor deposition doping and laser annealing”, IEEE Electron Device Letter, Vol. 36, No. 11, pp. 1114-1117, 2015.
  • Sun-Rong Jan, Tien-Pei Chou, Che-Yu Yeh, C. W. Liu, Robert V. Goldstein, Valentin A. Gorodtsov, and Pavel S. Shushpannikov “Comments and Corrections Reply to “Comment on ‘A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias”, IEEE Transactions on Electron Devices, Vol. 62, No. 9, pp. 3106, 2015
  • Jhih-Yang Yan, Sun-Rong Jan, Yi-Chung Huang, Huang-Siang Lan, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, M.-T. Yang and C. W. Liu, “Asymmetric Keep-out Zone of Through-Silicon Via using 28nm Technology Node”, IEEE Electron Device Letter, Vol. 36, No. 9, pp. 938-940, 2015.
  • I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Yu-Sheng Chen and C. W. Liu, “Junctionless Gate-all-around PFETs using in-situ Boron Doped Ge channel on Si”, IEEE Transaction on Nanotechnology, Vol. 14, No. 5, pp. 878-882, 2015.
  • Yen-Yu Chen, C.-C. Yen, T.-Y. Chang, C. W. Liu, “Enhance light emission from Ge by GeO2 micro hemispheres”, Solid-State Electronics, Volume 110, Pages 83-85, 2015.
  • D. Laroche, S.-H. Huang, E. Nielsen, C. W. Liu, J.-Y. Li, and T. M. Lu, “Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure,” Appl. Phys. Lett., Vol. 106, 143503, 2015.
  • M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, and S. V. Kravchenko,“Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well,” Appl. Phys. Lett., Vol. 106, 092102, 2015. 

    2014

  • Xiaobo Zhu and C. W. Liu, “Fabrication and characterization of Cu(In,Ga)Se2 p-channel thin film transistors”, Appl. Phys. Lett., Vol. 105, 143502, 2014.
  • C.W. Liu, M. Östling, and J.B. Hannon, “New Materials for Post-Si Computing”, MRS Bulletin, Vol. 39, No. 8, pp. 658-662, August, 2014 
  • Shi Luo, Jiun-Haw Lee, C. W. Liu, Jia-Min Shieh, Chang-Hong Shen, Tsung-Ta Wu ,D. Jang and Julia R. Greer, “Strength, stiffness,and microstructure of Cu(In,Ga)Se2 thin films deposited viasputtering and co-evaporation,” Appl. Phys. Lett. 105, 011907 (2014).
  • M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. V. Kravchenko, S.-H. Huang, C. W. Liu, “Effective Electron Mass in High_Mobility SiGe/Si/SiGe Quantum Wells” JETP Letters, Vol. 100, No. 2, pp. 114-119, 2014 
  • Wen-Hsien Tu, Shu-Han Hsu, and C. W. Liu, “The PN Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping” IEEE Trans. Electron Device, Vol. 61, No. 7, pp. 2595-2598, 2014
  • I-Hsieh Wong, Yen-Ting Chen, Jhih-Yang Yan, Huang-Jhih Ciou, Yu-Sheng Chen and C. W. Liu, “Fabrication and Low Temperature Characterization of Ge (110) and (100) p-MOSFETs” IEEE Transactions on Electron Devices, Vol. 61, No. 6, pp. 2215, 2014.
  • H. -S. Lan and C. W. Liu, “Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors”, Appl. Phys. Lett., Vol. 104, 192101, 2014.
  • Hung-Chih Chang, Cheng-Ming Lin, Chih-Hsiung Huang, and C. W. Liu, “Hysteresis Reduction by Fluorine Incorporation into High Permittivity Tetragonal ZrO2 on Ge”, Appl. Phys. Lett., Vol. 104, 032902, 2014.  

    2013

  • Y. -T. Chen, H. -C. Chang, I. -H. Wong, H. -C. Sun, H. -J. Ciou, W. -T. Yeh, S. -J. Lo, and C. W. Liu, "Radiation Impact of EUV on High Performance Ge MOSFETs," IEEE Electron Device Letters, vol. 34, no. 10, pp. 1220–1222, 2013. 
  • Ming-Heng Tsai, Sun-Rong Jan, Che-Yu Yeh, C. W. Liu, Robert V. Goldstein, Valentin A. Gorodtsov, and Pavel S. Shushpannikov, "Modeling and Optimization of Edge Dislocation Stressors," IEEE Electron Device Letters, vol. 34, no. 8, pp. 948–950, 2013. 
  • Cheng-Ming Lin, Hung-Chih Chang, I-Hsieh Wong, Shih-Jan Luo, C. W. Liu, and Chenming Hu, "Interfacial layer reduction and high permittivity tetragonal ZrO2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness," Appl. Phys. Lett., Vol. 102, 232906, 2013.
  • Yen-Yu Chen, H.-C. Chang, Y.-H. Chi, C.-H. Huang, and C. W. Liu, “GeO2 passivation for low surface recombination velocity on Ge surface,” IEEE Electron Device Letters, Vol. 34, No. 3, pp. 444-446, 2013. 
  • Tsang-Long Chen, Kuan-Chang Huang, Hsuan-Yi. Lin, C. H. Chou, H. H. Lin, and C. W. Liu, “Enhanced Current Drive of Double Gate α-IGZO Thin Film Transistors,” IEEE Electron Device Letters, Vol. 34, No. 3, pp. 417-419, 2013.
  • Hsin-Ping Wang , Tzu-Yin Lin , Chia-Wei Hsu ,Meng-Lin Tsai , Chih-Hsiung Huang , Wan-Rou Wei ,Ming-Yi Huang , Yi-Jiunn Chien , Po-Chuan Yang , C. W. Liu , Li-Jen Chou , and Jr-Hau He, “Realizing High-Efficiency Omnidirectional N-Type Si Solar Cells Via The Hierarchical Architecture Concept With Radial Junctions” ACS Nano, 7 (10), pp. 9325–9335, 2013.
  • Wan-Rou Wei , Meng-Lin Tsai , Shu-Te Ho , Shih-Hsiang Tai , Cherng-Rong Ho , Shin-Hung Tsai , C. W. Liu, Ren-Jei Chung , and Jr-Hau He, “Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon Trapping Structures,” Nano Letters, 13 (8), pp. 3658–3663, 2013.

    2012

  • T.M. Lu, W. Pan, D.C. Tsui, C.-H. Lee, and C.W. Liu, “The fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors,” accepted by Physical Review B, 2012.
  • S.-R. Jan, T.-P. Chou, C.-Y. Yeh, C. W. Liu, R. V. Goldstein, V. A. Gorodtsov, and P. S. Shushpannikov, “A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias,” to be published on IEEE Transactions on Electron Devices, 2012.
  • W.-W. Hsu, J. Y. Chen, T.-H. Cheng, S. C. Lu, W.-S. Ho, Y.-Y. Chen, Y.-J. Chien, and C. W. Liu, “Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3,” Appl. Phys. Lett., Vol. 100, 023508, 2012.
  • C.W. Liu, T.-H. Cheng, Y.-Y. Chen, S.-R. Jan, C.-Y. Chen , S.T. Chan, Y.-H. Nien, Y. Yamamoto, and B. Tillack, “Direct and indirect radiative recombination from Ge,” Thin Solid Films, Vol. 520, pp. 3249–3254, 2012.

 

2011

  • K.-M. Chen, G.-W. Huang, B.-Y. Chen, C.-S. Chiu, C.-H. Hsiao, W.-S. Liao, M.-Y. Chen, Y.-C. Yang, K.-L. Wang, and C. W. Liu, “LDMOS Transistor High-Frequency Performance Enhancements by Strain,” accepted by IEEE Electron Device Letters, 2011.
  • T.M. Lu, C.-H. Lee, S.-H. Huang, D.C. Tsui, and C.W. Liu, "Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors," Appl. Phys. Lett., Vol. 99, 153510, 2011.
  • H. -S. Lan, Y.-T. Chen, Hung-Chih Chang, J.-Y. Lin, William Hsu, W. -C. Chang, and C. W. Liu, "Electron scattering in Ge metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., Vol. 99, 112109, 2011.
  • W. S. Ho, Y. Deng, Y.-Y. Chen, T.-H. Cheng, C. W. Liu, W.-F. Tsai, and C.-F. Ai, “Enhanced optical performance by energetic hydrogen passivation at Si/oxide interface,” Thin Solid Films, Vol. 520, pp. 448-451, 2011.
  • Y.-Y. Chen, J. Y. Chen, R.-J. Hsu, W. S. Ho, C. W. Liu, W.-F. Tsai, and C.-F. Ai, “Edge passivation of Si solar cells by omnidirectional hydrogen plasma implantation” Journal of The Electrochemical Society, Vol. 158, No. 9, pp. H912-H914, 2011.
  • Y.-T. Chen, H.-S. Lan, W. Hsu, Y.-C. Fu, J.-Y. Lin, and C. W. Liu, "Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates," Appl. Phys. Lett., Vol. 99, 022106, 2011.
  • S.-H. Tang, E. Y. Chang, M. Hudait, J.-S. Maa, C. W. Liu, G.-L.Luo, H.-D. Trinh, and Y.-H. Su, "High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate," Appl. Phys. Lett., Vol. 98, 161905, 2011.
  • Y.-T. Chen , H. -S. Lan , William Hsu , Y.-C. Fu and C. W. Liu , “Strain response of high mobility Germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates accepted by Appl. Phys. Lett., 2011.
  • S. -R. Jan, C. -Y. Chen, C. -H. Lee, S. -T. Chan, K. -L. Peng and C. W. Liu, “Influence of defects and interface on radiative transition of Ge” accepted by Appl. Phys. Lett., 2011.
  • H. -S. Lan, S. -T. Chan, T. -H. Cheng, C. -Y. Chen, S. -R. Jan and C. W. Liu, “Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers” accepted by Appl. Phys. Lett., 2011.
  • Cheng-Ming Lin, Yen-Ting Chen, Cheng-Hang Lee, Hung-Chih Chang, Wei-Chiang Chang, Huan-Lin Chang, and C. W. Liu, “Voltage Linearity Improvement of HfO2-Based Metal-Insulator-Metal Capacitors with H2O Prepulse Treatment” Journal of The Electrochemical Society, Vol. 158, No. 2, H128, 2011.

2010

  • (SCI, EI) H.-C. Sun, C.-F. Huang, Y.-T. Chen, T.-Y. Wu, C. W. Liu, Y.-J. Hsu, and J.-S. Chen “Threshold Voltage and Mobility Extraction of NBTI Degradation of Poly-Si Thin-Film Transistors” IEEE Transactions on Electron Devices,Vol. 57, No. 11, pp. 3186, 2010.
  • (SCI, EI) Wen-Wei Hsu, Chao-Yun Lai, C. W. Liu, Chih-Hsin Ko, Ta-Ming Kuan, Tzu-Juei Wang, Wen-Chin Lee, and Clement H. Wann “Insulating Halos to Boost Planar NMOSFET Performance” IEEE Transactions on Electron Devices,Vol. 57, No. 10, pp. 2526, 2010.
  • (SCI, EI) Yen-Ting Chen, Hung-Chang Sun, Ching-Fang Huang, Ting-Yun Wu, C. W. Liu, Yuan-Jun Hsu, and Jim-Shone Chen “Capacitorless 1T Memory Cells Using Channel Traps at grain boundaries,” IEEE Electron Device Letters, Vol. 31, No. 10, pp. 1125, 2010.
  • (SCI, EI) W. Hsu, C. -Y. Peng, C. -M. Lin, Y. -Y. Chen, Y. -T. Chen, W. -S. Ho, and C. W. Liu,“Flexible single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain on polyimide substrates,” IEEE Electron Device Letters, Vol. 31, No. 5, pp. 422, 2010.
  • (SCI, EI) T. -H. Cheng, K. -L. Peng, C. -Y. Ko, C. -Y. Chen, H. -S. Lan, Y. -R. Wu, C. W. Liu, and H. -H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett., Vol. 96, 211108, 2010.
  • (SCI, EI) T. M. Lu*, C. -H. Lee, D. C. Tsui, and C. W. Liu, “Integration of complementary circuit and two-dimensional electron gas in a Si/SiGe heterostructure,” Appl. Phys. Lett., Vol. 96, 253103, 2010.
  • (SCI, EI) C. -H. Lee, C. W. Liu, H. -T. Chang, and S. W. Lee, “Hexagonal SiGe Quantum Dots and Nanorings on Si(110),” J. Appl. Phys. 107, 056103, 2010
  • (SCI, EI) T. -H. Cheng, C. -Y. Ko, C. -Y. Chen, K. -L. Peng, G. -L. Luo, C. W. Liu, and H. -H. Tseng, “Competitiveness between direct and indirect radiative transitions of Ge,” Appl. Phys. Lett., Vol. 96, 091105, 2010.
  • (SCI, EI) S. W. Lee, H. T. Chang,C. -H. Lee, S. L. Cheng and C. W. Liu, “Composition redistribution of self-assembled Ge islands on Si (001) during annealing,” Thin Solid Film, Vol. 518, pp. S196, 2010.

  • (SCI, EI) C.-H. Lin* and C. W. Liu, “Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions,” Thin Solid Films, Vol. 518, pp. S237-S240, 2010.

2009

  • (SCI, EI) S. W. Lee, C. -H. Lee, H. T. Chang, S. L. Cheng and C. W. Liu, “Evolution of composition distribution of Si-capped Ge islands on Si(001),” Thin Solid Film, Vol. 517, pp. 5029, 2009
  • W. -L. Hsu, Y. -H. Pai, F. -S. Meng, C. W. Liu, and G. -R. Lin, “Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film,” Appl. Phys. Lett., Vol. 93(23), 231906 - 231906-3, 2009.
  • (SCI, EI) C.-Y. Peng, Y.-C. Fu, C.-F. Huang, Y.-J. Yang, S.-T. Chang, and C.W. Liu, “Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors,” IEEE Trans. on Electron Devices, Vol. 56, No. 8, pp. 1736-1745, 2009.
  • (SCI, EI) W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, Y.-Y. Chen, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide detectors,” Appl. Phys. Lett., Vol. 94, 261107, 2009.
  • (SCI, EI) T. M. Lu*, D. C. Tsui, C. -H. Lee and C. W. Liu, “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs,” Appl. Phys. Lett., Vol. 94, 182102, 2009.
  • (SCI, EI) C.-Y. Peng, C.-F. Huang, Y.-C. Fu, Y.-H. Yang, C.-Y. Lai, S.-T. Chang, and C. W. Liu, “Comprehensive study of the Raman shifts of strained silicon and germanium,” J. Appl. Phys., Vol. 105, 083537, 2009.
  • (SCI, EI) P.-S. Kuo, C.-Y. Peng, C.-H. Lee, Y.-Y. Shen, H.-C. Chang, and C. W. Liu, “Si/Si0.2Ge0.8/Si quantum well Schottky barrier diodes,” Appl. Phys. Lett., Vol. 94, 103512, 2009.
  • (SCI, EI) T.-H. Cheng, P.-S. Kuo, C.-Y. Ko, and C.-Y. Chen, and C. W. Liu, “Electroluminescence from monocrystalline silicon solar cell,” J. Appl. Phys., Vol. 105, 106107,2009.
  • (SCI, EI) C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” J. Nanosci. Nanotech., Vol. 9, No. 6, pp. 3622-3626, 2009.
  • (SCI, EI) C.-H. Lee, Y.-Y. Shen, C. W. Liu, S. W. Lee, B.-H. Lin, and C.-H. Hsu, “SiGe nanorings by ultrahigh vacuum chemical vapor deposition,” Appl. Phys