Journal Paper

1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010  2011  2012

 

2012

  • T.M. Lu, W. Pan, D.C. Tsui, C.-H. Lee, and C.W. Liu, “The fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors,” accepted by Physical Review B, 2012.
  • S.-R. Jan, T.-P. Chou, C.-Y. Yeh, C. W. Liu, R. V. Goldstein, V. A. Gorodtsov, and P. S. Shushpannikov, “A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias,” to be published on IEEE Transactions on Electron Devices, 2012.
  • W.-W. Hsu, J. Y. Chen, T.-H. Cheng, S. C. Lu, W.-S. Ho, Y.-Y. Chen, Y.-J. Chien, and C. W. Liu, “Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3,” Appl. Phys. Lett., Vol. 100, 023508, 2012.
  • C.W. Liu, T.-H. Cheng, Y.-Y. Chen, S.-R. Jan, C.-Y. Chen , S.T. Chan, Y.-H. Nien, Y. Yamamoto, and B. Tillack, “Direct and indirect radiative recombination from Ge,” Thin Solid Films, Vol. 520, pp. 3249–3254, 2012.

 

2011

  • K.-M. Chen, G.-W. Huang, B.-Y. Chen, C.-S. Chiu, C.-H. Hsiao, W.-S. Liao, M.-Y. Chen, Y.-C. Yang, K.-L. Wang, and C. W. Liu, “LDMOS Transistor High-Frequency Performance Enhancements by Strain,” accepted by IEEE Electron Device Letters, 2011.
  • T.M. Lu, C.-H. Lee, S.-H. Huang, D.C. Tsui, and C.W. Liu, "Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors," Appl. Phys. Lett., Vol. 99, 153510, 2011.
  • H. -S. Lan, Y.-T. Chen, Hung-Chih Chang, J.-Y. Lin, William Hsu, W. -C. Chang, and C. W. Liu, "Electron scattering in Ge metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., Vol. 99, 112109, 2011.
  • W. S. Ho, Y. Deng, Y.-Y. Chen, T.-H. Cheng, C. W. Liu, W.-F. Tsai, and C.-F. Ai, “Enhanced optical performance by energetic hydrogen passivation at Si/oxide interface,” Thin Solid Films, Vol. 520, pp. 448-451, 2011.
  • Y.-Y. Chen, J. Y. Chen, R.-J. Hsu, W. S. Ho, C. W. Liu, W.-F. Tsai, and C.-F. Ai, “Edge passivation of Si solar cells by omnidirectional hydrogen plasma implantation” Journal of The Electrochemical Society, Vol. 158, No. 9, pp. H912-H914, 2011.
  • Y.-T. Chen, H.-S. Lan, W. Hsu, Y.-C. Fu, J.-Y. Lin, and C. W. Liu, "Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates," Appl. Phys. Lett., Vol. 99, 022106, 2011.
  • S.-H. Tang, E. Y. Chang, M. Hudait, J.-S. Maa, C. W. Liu, G.-L.Luo, H.-D. Trinh, and Y.-H. Su, "High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate," Appl. Phys. Lett., Vol. 98, 161905, 2011.
  • Y.-T. Chen , H. -S. Lan , William Hsu , Y.-C. Fu and C. W. Liu , “Strain response of high mobility Germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates accepted by Appl. Phys. Lett., 2011.
  • S. -R. Jan, C. -Y. Chen, C. -H. Lee, S. -T. Chan, K. -L. Peng and C. W. Liu, “Influence of defects and interface on radiative transition of Ge” accepted by Appl. Phys. Lett., 2011.
  • H. -S. Lan, S. -T. Chan, T. -H. Cheng, C. -Y. Chen, S. -R. Jan and C. W. Liu, “Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers” accepted by Appl. Phys. Lett., 2011.
  • Cheng-Ming Lin, Yen-Ting Chen, Cheng-Hang Lee, Hung-Chih Chang, Wei-Chiang Chang, Huan-Lin Chang, and C. W. Liu, “Voltage Linearity Improvement of HfO2-Based Metal-Insulator-Metal Capacitors with H2O Prepulse Treatment” Journal of The Electrochemical Society, Vol. 158, No. 2, H128, 2011.

2010

  • (SCI, EI) H.-C. Sun, C.-F. Huang, Y.-T. Chen, T.-Y. Wu, C. W. Liu, Y.-J. Hsu, and J.-S. Chen “Threshold Voltage and Mobility Extraction of NBTI Degradation of Poly-Si Thin-Film Transistors” IEEE Transactions on Electron Devices,Vol. 57, No. 11, pp. 3186, 2010.
  • (SCI, EI) Wen-Wei Hsu, Chao-Yun Lai, C. W. Liu, Chih-Hsin Ko, Ta-Ming Kuan, Tzu-Juei Wang, Wen-Chin Lee, and Clement H. Wann “Insulating Halos to Boost Planar NMOSFET Performance” IEEE Transactions on Electron Devices,Vol. 57, No. 10, pp. 2526, 2010.
  • (SCI, EI) Yen-Ting Chen, Hung-Chang Sun, Ching-Fang Huang, Ting-Yun Wu, C. W. Liu, Yuan-Jun Hsu, and Jim-Shone Chen “Capacitorless 1T Memory Cells Using Channel Traps at grain boundaries,” IEEE Electron Device Letters, Vol. 31, No. 10, pp. 1125, 2010.
  • (SCI, EI) W. Hsu, C. -Y. Peng, C. -M. Lin, Y. -Y. Chen, Y. -T. Chen, W. -S. Ho, and C. W. Liu,“Flexible single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain on polyimide substrates,” IEEE Electron Device Letters, Vol. 31, No. 5, pp. 422, 2010.
  • (SCI, EI) T. -H. Cheng, K. -L. Peng, C. -Y. Ko, C. -Y. Chen, H. -S. Lan, Y. -R. Wu, C. W. Liu, and H. -H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett., Vol. 96, 211108, 2010.
  • (SCI, EI) T. M. Lu*, C. -H. Lee, D. C. Tsui, and C. W. Liu, “Integration of complementary circuit and two-dimensional electron gas in a Si/SiGe heterostructure,” Appl. Phys. Lett., Vol. 96, 253103, 2010.
  • (SCI, EI) C. -H. Lee, C. W. Liu, H. -T. Chang, and S. W. Lee, “Hexagonal SiGe Quantum Dots and Nanorings on Si(110),” J. Appl. Phys. 107, 056103, 2010
  • (SCI, EI) T. -H. Cheng, C. -Y. Ko, C. -Y. Chen, K. -L. Peng, G. -L. Luo, C. W. Liu, and H. -H. Tseng, “Competitiveness between direct and indirect radiative transitions of Ge,” Appl. Phys. Lett., Vol. 96, 091105, 2010.
  • (SCI, EI) S. W. Lee, H. T. Chang,C. -H. Lee, S. L. Cheng and C. W. Liu, “Composition redistribution of self-assembled Ge islands on Si (001) during annealing,” Thin Solid Film, Vol. 518, pp. S196, 2010.

  • (SCI, EI) C.-H. Lin* and C. W. Liu, “Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions,” Thin Solid Films, Vol. 518, pp. S237-S240, 2010.

2009

  • (SCI, EI) S. W. Lee, C. -H. Lee, H. T. Chang, S. L. Cheng and C. W. Liu, “Evolution of composition distribution of Si-capped Ge islands on Si(001),” Thin Solid Film, Vol. 517, pp. 5029, 2009
  • W. -L. Hsu, Y. -H. Pai, F. -S. Meng, C. W. Liu, and G. -R. Lin, “Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film,” Appl. Phys. Lett., Vol. 93(23), 231906 - 231906-3, 2009.
  • (SCI, EI) C.-Y. Peng, Y.-C. Fu, C.-F. Huang, Y.-J. Yang, S.-T. Chang, and C.W. Liu, “Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors,” IEEE Trans. on Electron Devices, Vol. 56, No. 8, pp. 1736-1745, 2009.
  • (SCI, EI) W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, Y.-Y. Chen, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide detectors,” Appl. Phys. Lett., Vol. 94, 261107, 2009.
  • (SCI, EI) T. M. Lu*, D. C. Tsui, C. -H. Lee and C. W. Liu, “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs,” Appl. Phys. Lett., Vol. 94, 182102, 2009.
  • (SCI, EI) C.-Y. Peng, C.-F. Huang, Y.-C. Fu, Y.-H. Yang, C.-Y. Lai, S.-T. Chang, and C. W. Liu, “Comprehensive study of the Raman shifts of strained silicon and germanium,” J. Appl. Phys., Vol. 105, 083537, 2009.
  • (SCI, EI) P.-S. Kuo, C.-Y. Peng, C.-H. Lee, Y.-Y. Shen, H.-C. Chang, and C. W. Liu, “Si/Si0.2Ge0.8/Si quantum well Schottky barrier diodes,” Appl. Phys. Lett., Vol. 94, 103512, 2009.
  • (SCI, EI) T.-H. Cheng, P.-S. Kuo, C.-Y. Ko, and C.-Y. Chen, and C. W. Liu, “Electroluminescence from monocrystalline silicon solar cell,” J. Appl. Phys., Vol. 105, 106107,2009.
  • (SCI, EI) C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” J. Nanosci. Nanotech., Vol. 9, No. 6, pp. 3622-3626, 2009.
  • (SCI, EI) C.-H. Lee, Y.-Y. Shen, C. W. Liu, S. W. Lee, B.-H. Lin, and C.-H. Hsu, “SiGe nanorings by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett., Vol. 94, 141909, 2009.
  • W.-L. Hsu, C.-T. Lin, T.-H. Cheng, S.-C. Yen, C. W. Liu, D.-P. Tsai, and G.-R. Lin, “Annealing induced refinement on optical transmission and electrical resistivity of indium tin oxide,” Chinese Optics Letters, Vol. 7, No. 3, March 10, 2009.
  • (SCI, EI) C.-F. Huang, H.-C. Sun, Y.-J. Yang, C.-Y. Peng, Y.-T. Chen, C. W. Liu, Y.-C. Hsu, C.-C. Shih, and J.-S. Chen, “Dynamic bias instability on p-channel polycrystalline silicon thin-film transistors induced by impact ionization,” IEEE Elec. Dev. Lett., Vol. 30, No. 4, pp. 368-370, 2009.
  • (SCI, EI) W. S. Ho, C.-H. Lin, T.-H. Cheng, W. W. Hsu, Y. -Y. Chen, P. -S. Kuo, and C. W. Liu, “Narrow-Band Metal-Oxide-Semiconductor Photodetectors,” Appl. Phys. Lett., Vol. 94, 061114, 2009.

2008

  • (EI) A. A. Abramov, C.-H. Lin, and C.W. Liu, “Fano interference in the Quantum Well-quantum dot system,” accepted by International Journal of Nanoscience, Vol. 7, Nos. 4&5, pp. 181-186, 2008.
  • (SCI, EI) S.-R. Jan, T.-H. Cheng, T.-A. Hung, P.-S. Kuo, M. H. Liao, Y. Deng, and C. W. Liu, “Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes,” IEEE Trans. on Electron Devices, Vol. 55, No. 12, pp. 3590-3593, 2008.
  • (SCI, EI) C.-F. Huang, C.-Y. Peng, Y.-J. Yang, H.-C. Sun, H.-C. Chang, P.-S. Kuo, H.-L. Chang, C.-Z. Liu, and C. W. Liu, “Stress-induced hump effects of p-channel polycrystalline silicon thin-film transistors,” IEEE Electron Device Letters, Vol. 29, No. 12, pp. 1332-1335, 2008.
  • (SCI, EI) C.-H. Lin, C.-Y. Yu, C.-C. Chang, C.-H. Lee, Y.-J. Yang, W. S. Ho, Y.-Y. Chen, M. H. Liao, C.-T. Cho, C.-Y. Peng, and C. W. Liu, “SiGe/Si Quantum-Dot Infrared Photodetectors With δ doping,” IEEE Trans. Nanotech.,Vol. 7, No. 5, pp. 558-564, 2008.
  • (SCI, EI) W.-S. Liao*, Y.-G. Liaw, M.-C. Tang, S. Chakraborty, and C. W. Liu, “Investigation of Reliability Characteristics in NMOS and PMOS FinFETs," IEEE Electron Device Letters, Vol. 29, No. 7, pp. 788-790, 2008.
  • (SCI, EI) H.-L. Chang, P.-S. Kuo, W.-C. Hua, C.-P. Lin, C.-Y. Lin, and C. W. Liu, “Reduction of crosstalk between dual power amplifiers using laser treatment,” IEEE Microwave. Wireless Compon. Lett., Vol. 18, No. 9, pp. 602-604, Sep. 2008.
  • (SCI, EI) C.-H. Lee, C.-Y. Yu, C. M. Lin, C.W. Liu, H. Lin, and W.-H. Chang, “Carrier gas effects on the SiGe quantum dots formation,” Applied Surface Science, Vol. 254, No. 19, pp. 6257-6260, 2008.
  • (SCI, EI) S. W. Lee*, P. S. Chen, S. L. Cheng, M. H. Lee, H. T. Chang, C.-H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition,” Applied Surface Science, Vol. 254, No. 19, pp. 6261-6264, 2008.
  • (SCI, EI) P. S. Chen*, S. W. Lee, M. H. Lee, and C. W. Liu, “Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing”, Applied Surface Science, Vol. 254, No. 19, pp. 6076-6080, 2008.
  • (SCI, EI) W.-S. Liao*, S.-Y. Huang, M.-C. Tang, Y.-G Liaw, K.-M. Chen, Tommy Shih, H.-C. Tsen, L. Chung, and C. W. Liu, “Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining,” Jpn J. Appl. Phys. L3127-3129, April, 2008.
  • (SCI, EI) M. H. Liao, Lingyen Yeh, T.-L. Lee, C. W. Liu and M.-S. Liang, “Superior n-MOSFET performance by optimal stress design,” IEEE Electron Device Letters, 29(4), pp. 402-404, 2008.
  • (SCI, EI) T.-H. Cheng, M. H. Liao, Lingyen Yeh, T.-L. Lee, M.-S. Liang, and C. W. Liu, “Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors,” J. Appl. Phys.,103, 016103, 2008.
  • (SCI, EI) M. H. Liao, T.-H. Cheng, C. W. Liu, Lingyen Yeh, T.-L. Lee, and M.-S. Liang, “2.0 μm electroluminescence from the Si/Si0.2Ge0.8 type II heterojunction,” J. Appl. Phys., Vol. 103, 013105,2008.
  • (SCI, EI) W.-S. Liao*, Y.-G. Liaw*, M.-C. Tang, K.-M. Chen*, S.-Y. Huang, C.-Y. Peng, and C. W. Liu, “PMOS hole mobility enhancement through SiGe conductive channel and highly compressive ILD-SiNx stressing layer,” IEEE Electron Device Letters, Vol. 29, No. 1, pp. 86-88, 2008.

2007

  • (SCI, EI) S. Maikap*, M. H. Lee, S. T. Chang, and C. W. Liu, “Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate,” Semicond. Sci. Technol, Vol. 22 pp. 342-347, 2007.
  • (SCI, EI) P.-S. Kuo, Y.-C. Fu, C.-C. Chang, C.-H. Lee and C. W. Liu, “Dark current reduction of Ge MOS photodetectors by high work function electrodes,” Electronics Lett., Vol. 43, Issue. 20, pp. 1113-1114, 2007.
  • (SCI, EI) Y.-J. Yang, W. S. Ho, C.-F. Huang, S. T. Chang, and C. W. Liu, “Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect-transistors,” Appl. Phys. Lett., Vol. 91, 102103, 2007; also in Virtual Journal of Nanoscale Science & Technology, Vol. 16, Issue. 12, 2007.
  • (SCI, EI) M. H. Liao, C.-H. Lee, T.-A. Hung, and C. W. Liu, “The intermixing and strain effects on electroluminescence of SiGe dots,” J. Appl. Phys., Vol. 102, 053520,2007.
  • (SCI, EI) P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu, “Transport mechanism of SiGe dot MOS tunneling diodes,”IEEE Electron Device Letters, Vol. 28, No. 7, pp. 596-598, 2007.
  • (SCI, EI) C.-H. Lin, Y.-T. Chiang, C.-C. Hsu, C.-H. Lee, C.-F. Huang, C.-H. Lai, T.-H. Cheng, and C. W. LiuGe-on-glass Detectors,” Appl. Phys. Lett., Vol. 91, 041105, 2007.
  • (SCI, EI) T.-C. Chen, C.-Y. Peng,M. H. Liao,C.-H. Tseng, P.-S. Chen, M.-Y. Chern, and C. W. Liu, “Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer deposition,”IEEE Trans. on Electron Devices, Vol. 54, pp. 759-776, 2007.
  • (SCI, EI) C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W.-S. Ho and C. W. Liu, “Broadband SiGe/Si quantum dot infrared photodetectors,” J. Appl. Phys.,Vol. 101, No. 3, 033117, 2007.
  • (SCI, EI) C.-Y. Peng, F. Yuan, M. H. Lee, C.-Y. Yu, S. Maikap, S. T. Chang, P.-S. Kuo, and C. W. Liu, “Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si,” Appl. Phys. Lett., Vol. 90, 012114, 2007.
  • (SCI, EI) W.-C. Hua, H.-L. Chang, T. Wang, C.-Y. Lin, C.-P. Lin, S. S. Lu, C. C. Meng, and C. W. Liu, “Performance enhancement of the nMOSFET low noise amplifier by package strain,” IEEE Trans. Electron Devices, Vol. 54, No. 1, pp. 160-162, Jan. 2007.

2006

  • (SCI, EI) M. H. Liao, T.-H. Cheng, and C. W. Liu, “Infrared emission from Ge metal-insulator-semiconductor tunneling diodes,” Appl. Phys. Lett., Vol. 89, 261913, 2006.
  • (SCI, EI) C.-Y. Yu, C.-J. Lee, C.-Y. Lee, J.-T. Lee, M. H. Liao, and C. W. Liu, “The Buckling Characteristics of SiGe Layers on Viscous Oxide,” J. of Appl. Phys., Vol. 100, 063510, 2006.
  • (SCI, EI) C.-Y. Yu, C.-Y. Lee, C.-H. Lin, and C. W. Liu, “Low-Temperature Fabrication and characterization of Ge-on-Insulator structures,” Appl. Phys. Lett., Vol. 89, 101913, 2006.
  • (SCI, EI) C.-F. Huang, Y.-J. Yang, C.-Y. Peng, F. Yuan, and C. W. Liu, “Mechanical Strain Effect of N-channel Poly-Si Thin-Film Transistors,” Appl. Phys. Lett., Vol. 89, 103502, 2006.
  • (SCI, EI) Y. M. Lin*, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, “Hole Confinement and 1/f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal-Oxide-Semiconductor Field-Effect Transistors,” Part1 Lett., Jpn. J. Appl. Phys., Vol. 45, No. 5A, pp. 4006-4008, 2006.
  • (SCI, EI) S. W. Lee, Y. L. Chueh, H. C. Chen, L. J. Chen*, P. S. Chen, L. J. Chou, and C. W. Liu, “Field emission properties of self-assembled Si-capped Ge quantum dots,” Thin Solid Films, Vol. 508, pp. 218-221, 2006.
  • (SCI, EI) S. W. Lee, P. S. Chen, T. Y. Chien, L. J. Chen*, C. T. Chia, and C. W. Liu, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” Thin Solid Films, Vol. 508, pp. 120-123, 2006.
  • (SCI, EI) J.-W. Shi*, P.-H. Chiu, F.-H. Huang, and Y.-S. Wu, Ja-Yu Lu, C.-K. Sun, and C.-W. Liu, P.-S. Chen, “Si/SiGe-Based Edge-Coupled Photodiode with Partially P-Doped Photo-absorption Layer for High Responsivity and High-Power Performance,”Appl. Phys. Lett., Vol. 88, 193506, 2006.
  • (SCI, EI) M. H. Liao, P.-S. Kuo, S.-R. Jan, S.-T. Chang, C. W. Liu, “Strained Pt Schottky diodes on n-type Si and Ge,” Appl. Phys. Lett., Vol. 88, 143509, 2006.
  • (SCI, EI) M. H. Liao, C.-Y. Yu, T.-H. Guo, C.-H. Lin, and C. W. Liu, “Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes,” IEEE Electron Device Letters, Vol. 27, No.4, pp. 252-254, 2006.
  • (SCI,EI) F. Yuan, C.-F. Huang, M.-H. Yu, and C. W. Liu, “Performance Enhancement of Ring Oscillators and Transimpedance Amplifiers by Package Strain,” IEEE Trans. on Electron Devices, Vol. 53, No. 4, pp. 724-729, 2006.
  • (SCI, EI) C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, T.-H. Kuo, and C. W. Liu, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” Thin Solid Films, Vol. 508, pp. 389-392, 2006.
  • (SCI, EI) P. S. Chen*, S. W. Lee, M. H. Lee and C. W. Liu, “Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs, ” Semicond. Sci. Technol, Vol. 21, pp. 479-485, 2006.
  • (SCI) J.-Y. Wei, S. Maikap, M. H. Lee, C. C. Lee, and C. W. Liu, “Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices,” Solid State Electronics, Vol. 50, pp. 109-113, 2006.
  • (SCI, EI) S. L. Wu*, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced CMOS Performances Using Substrate Strained-SiGe and Mechanical Strained-Si Technology,” IEEE Electron Device Letters, Vol. 27, No. 1, pp. 46-48, 2006.

2005

  • (SCI, EI) Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen, C. W. Liu, “SiGe/Si PMOSFET using graded channel technique,” Materials Science in Semiconductor Processing, Vol. 8, pp. 347-351, 2005.
  • (SCI, EI) S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M.-J. Tsai, and C. W. Liu, “Formation of SiCH6-mediated Ge quantum dots with strong field emission properties by ultra-high vacuum chemical vapor deposition,” J. Appl. Phys., Vol. 98, pp. 073506, 2005.
  • (SCI, EI) C. C. Yeo, B. J. Cho, F. Gao, S. J. Lee, M. H. Lee, C.-Y. Yu, C. W. Liu, L. J. Tang, and T. W. Lee, “Electron Mobility Enhancement Using Ultrathin Pure Ge on Si Substrate,” IEEE Electron Device Letters, Vol. 26, No. 10, pp. 761-763, 2005.
  • (SCI, EI) “Invited” C. W. Liu, S. Maikap, and C.-Y. Yu, “Mobility-enhancement Technologies,” IEEE Circuit and Device Magazine, Vol. 21, No. 3, pp. 21-36, May, 2005.
  • (SCI) S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M. H. Lee, M.-J. Tsai, and C. W. Liu, “The growth of strained Si on high-quality relaxed Si1-xGex with an intermediate Si1-yGey layer,” J. Vac. Sci. Tech. A, Vol. 23, No. 4, pp.1141-1145, 2005.
  • K. F. Liao, S. W. Lee, L. J. Chen, P. S. Chen, and C. W. Liu, “Formation of thin relaxed SiGe buffer layer with H-implantation dose and thermal annealing,” Nuclear Inst. and Methods in Physics Research, B, Vol. 237, No. 1-2, pp. 217-222, 2005.
  • (SCI, EI) W.-C. Hua, M. H. Lee, P. S. Chen, S. C. Lu, M.-J. Tsai, and C. W. Liu, “Threading Dislocation Induced Low Frequency Noise in Strained-Si nMOSFETs,” IEEE Electron Device Letters, Vol. 26, No. 9, pp. 667-669, 2005.
  • (SCI,EI) M. H. Liao, S. T. Chang, M. H. Lee, S. Maikap, and C. W. Liu, “Abnormal hole mobility of biaxial strained Si,” J. Appl. Phys., Vol. 98, pp. 066104, 2005.
  • (SCI, EI) M.-H. Liao, T. C. Chen, M. J. Chen, and C. W. Liu, “Electroluminescence from metal/oxide/strained-Si tunneling diodes,” Appl. Phys. Lett., Vol. 86, No. 22, 223502, 2005.
  • (SCI, EI, 4 pages) C.-Y. Yu, P.-W. Chen, S.-R. Jan, M.-H. Liao, K.-F. Liao, and C. W. Liu, “Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers,” Appl. Phys. Lett., Vol. 86, No. 1, 011909, 2005.